Micron-sized silica mesh for enhancing the performance of quantum dot sensitized solar cells

Three dimensional silica mesh structures are prepared through a new and simple method for enhancing the quantum dot sensitized solar cells performance and stability.Silica patterns are made on the top of the TiO₂ photoanodes and a marked improvement in light scattering properties of meshed structures is confirmed by diffuse reflectance spectroscopy measurements. This improvement enhances the current density and consequently the cells ‘efficiency. Parameters of electron transport in cells are explored by electrochemical impedance spectroscopy (EIS). According to the EIS results, silica mesh declines the recombination rate in cells in a clear way. Here more than 50% efficiency improvement is obtained in meshed structures in comparison to cells with normal TiO₂ photoanode structures. The insulated silica mesh, reduces the electrolyte's deleterious effect on the semiconductor layers and the cells’ stability is improved.     

Narrow-band emitters in LED backlights for liquid-crystal displays

Over the last decade, narrow-band emitters have been recognized as key enablers for light emitting diodes (LEDs) backlights in liquid-crystal displays (LCDs) by competing with other display technologies. Today, efforts have been devoted to the exploration of narrow-band green/red luminescent materials with high quantum efficiency and excellent stability to optimize the performance of LED backlights. This review first presents an overview of the significant progress made in the development of narrow-band emitters used in LED backlights for LCDs with the emphasis on the versatile materials databases from doped phosphors to luminescent II–VI, III-V semiconductor quantum dots, and the recent halide perovskites nanocrystals and bulk metal halides. Subsequently, the correlation of structure-luminescence properties, and the device performance optimization of these emitters have been analyzed. The focus is placed on summarizing and comparing the remarkable examples of outdated and new narrow-band luminescent materials as potential candidates in LED backlights. Finally, the outlooks and challenges in discovering new narrow-band emitters have been proposed.     

Magneto-polaron induced intersubband optical transition in a wide band gap II–VI semiconductor quantum dot

Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cd_0.8Zn_0.2Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydrogenic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscillator strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.     

In-situ molecular-level hybridization enabling high-sulfonation-degree sulfonated poly(ether ether ketone) membrane with excellent anti-swelling ability and proton conduction

Sulfonated poly(ether ether ketone) (SPEEK) membrane with high sulfonation degree (SD) is a promising substitute of Nafion as proton exchange membrane (PEM), due to the excellent proton conductivity and low cost. However, its widespread application is limited by the inferior structural stability. Here, we report the fabrication of high SD SPEEK membrane with outstanding structural stability through an in-situ molecular-level hybridization method. Concretely, the ionic nanophase of SPEEK membrane is filled with precursors, which are then in-situ converted into polymer quantum dots (PQDs) by a microwave-assisted polycondensation process. In this manner, the micro-phase separation structure of SPEEK membrane is well maintained. PQDs with abundant hydrophilic functional groups together with the inherent –SO₃H groups impart hybrid membrane highly enhanced proton conductivity of 138.2 mS cm⁻¹ at 80 °C, which is comparable to Nafion. This then offers a 116.3% enhancement in device output power. Meanwhile, PQDs act as cross-linkers via generated electrostatic interactions with SPEEK, affording hybrid membrane with SD of 94.1% an ultralow swelling ratio of 1.35% at 25 °C, about 35 times lower than control membrane. More importantly, the in-situ molecular-level hybridization method is versatile, which can also boost the performances of chitosan (CS)-based membranes.     

Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

We investigated the resistive switching characteristics of a polystyrene:ZnO–graphene quantum dots system and its potential application in a one diode-one resistor architecture of an organic memory cell. The log–log I–V plot and the temperature-variable I–V measurements revealed that the switching mechanism in a low-current state is closely related to thermally activated transport. The turn-on process was induced by a space-charge-limited current mechanism resulted from the ZnO–graphene quantum dots acting as charge trap sites, and charge transfer through filamentary path. The memory device with a diode presented a ∼10³ I_ON/I_OFF ratio, stable endurance cycles (10² cycles) and retention times (10⁴ s), and uniform cell-to-cell switching. The one diode-one resistor architecture can effectively reduce cross-talk issue and realize a cross bar array as large as ∼3 kbit in the readout margin estimation. Furthermore, a specific word was encoded using the standard ASCII character code.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.     

高集成度射频收发器的差分正交调制解调测试与工程实现

针对高集成度射频收发器(AD9361)实现差分正交调制解调(DQPSK)收发过程中存在的工程实现问题,采用理论分析与硬件平台实现相结合的方法测试AD9361,验证DQPSK调制解调;先通过Serial Peripheral Interface(SPI)接口测试AD9361自发自收,采用点积叉积方法实现了DQPSK的调制解调;配置AD9361过程中,通过测试定位初始化后AD9361输出端无波形、通过示波器观察发现AD9361发射与接收本振时域波形扭曲、频谱仪观察AD9361输出端谐波分量严重、DQPSK解调时发射本振与接收本振存在随机相位误差4个疑难问题,分别通过采用降低SPI时钟频率为10 MHz、AD9361芯片的系统时钟更改设置为40 MHz、初始化过程中输出端频率设置为1.4 GHz、DQPSK的解调采用点积叉积方式进行解调4种方法予以解决;实验结果表明4个相关问题解决效果良好,所实现的DQPSK收发性能可靠。     

Quantum dot cascade laser

We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The characteristic temperature for the threshold current density within the temperature range of 82 to 162 K is up to 400 K. Moreover, our materials show the strong perpendicular mid-infrared response at about 1,900 cm^-1. These results are very promising for extending the present laser concept to terahertz quantum cascade laser, which would lead to room temperature operation.

PACS

42.55.Px; 78.55.Cr; 78.67.Hc     

A new method to disperse CdS quantum dot-sensitized TiO2 nanotube arrays into P3HT:PCBM layer for the improvement of efficiency of inverted polymer solar cells

We report that the efficiency of ITO/nc-TiO₂/P3HT:PCBM/MoO₃/Ag inverted polymer solar cells (PSCs) can be improved by dispersing CdS quantum dot (QD)-sensitized TiO₂ nanotube arrays (TNTs) in poly (3-hexylthiophene) and [6,6]-phenyl-C₆₁-butyric acid methyl ester (P3HT:PCBM) layer. The CdS QDs are deposited on the TNTs by a chemical bath deposition method. The experimental results show that the CdS QD-sensitized TNTs (CdS/TNTs) do not only increase the light absorption of the P3HT:PCBM layer but also reduce the charge recombination in the P3HT:PCBM layer. The dependence of device performances on cycles of CdS deposition on the TNTs was investigated. A high power conversion efficiency (PCE) of 3.52% was achieved for the inverted PSCs with 20 cyclic depositions of CdS on TNTs, which showed a 34% increase compared to the ITO/nc-TiO₂/P3HT:PCBM/MoO₃/Ag device without the CdS/TNTs. The improved efficiency is attributed to the improved light absorbance and the reduced charge recombination in the active layer.     

Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix

We investigate the effects of hydrogen plasma treatment (HPT) on the properties of silicon quantum dot superlattice films. Hydrogen introduced in the films efficiently passivates silicon and carbon dangling bonds at a treatment temperature of approximately 400°C. The total dangling bond density decreases from 1.1 × 10¹⁹ cm^-3 to 3.7 × 10¹⁷ cm^-3, which is comparable to the defect density of typical hydrogenated amorphous silicon carbide films. A damaged layer is found to form on the surface by HPT; this layer can be easily removed by reactive ion etching.