Contribution of metal vapor mass at periphery part of pulsed arc to electromagnetic force in weld pool

The arc welding has been used in various welding methods because it is inexpensive and high in strength after welding. However, it is a problem that accidents such as collapse of the bridge occur because of the welding defects. The welding of low cost and high productivity is required without the welding defects. The pulsed TIG welding is inexpensive and capable of high‐quality welding. The electromagnetic force contributing to penetration changes because the transient response of arc temperature and iron vapor generated from anode occurs. However, the analysis of pulsed TIG welding with metal vapor has been elucidated only metal vapor concentration near anode with transient phenomenon and heat flux. Thus, the theoretical elucidation of penetration depth with control factor has not been researched. In this paper, the contribution of metal vapor mass at the periphery part of pulsed arc to the electromagnetic force in the weld pool is elucidated. As a result, the iron vapor mass at periphery part decreased with increasing the frequency. The iron vapor was stagnated at axial center within one cycle. The electromagnetic force to the penetration depth direction in weld pool increased at axial center. Therefore, the metal vapor mass at periphery part plays an important role for the electromagnetic force increment at axial center.     

Improved quantum efficiency of Sr(Al,Si)5(O,N)7:Ce3+ by selection of Ce raw material

The luminescence properties of yellow-emitting Ce³⁺-doped Sr-containing sialon phosphor Sr(Al,Si)₅(O,N)₇:Ce³⁺ were notably improved by the Ce raw material selection. By changing the Ce raw material from oxides to nitrides or chlorides, the emission wavelength shifted to above 560 nm, which is beneficial for higher color rendering index white light-emitting diodes. This result from an increase in the covalency of the host crystal being associated with a decrease in the oxygen content. When Ce chloride was used, both the absorption and internal quantum efficiency increased, resulting in an increase in the external quantum efficiency up to 65%–72%. Inductively coupled plasma mass spectrometry, X-ray diffraction, and electron spin resonance measurements showed that the reason for the absorption increase is an increase in Ce³⁺ content and suppression of the generation of the second phase, and the reason for the increase in the internal quantum efficiency is a decrease in the host crystal absorption via suppression of anion vacancy generation. It was found that Ce chloride not only suppresses oxygen impurities but also acts as a flux that results in improved crystallinity.     

Operation of superconducting fault current limiter using vacuum interrupter driven by electromagnetic repulsion force for commutating switch

Using conventional high‐temperature superconducting wire, a model superconducting fault current limiter (SFCL) is made and tested. Solenoid coil using Bi2223 silver sheath wire is so made that inductance is as small as possible and a vacuum interrupter is connected in series to it. A conventional reactor coil is connected in parallel. When the fault current flows in this equipment, superconducting wire is quenched and current is transferred into the parallel coil because of voltage drop of superconducting wire. This large current in parallel coil actuates magnetic repulsion mechanism of vacuum interrupter. Due to opening of vacuum interrupter, the current in superconducting wire is broken. By using this equipment, current flow time in superconducting wire can be easily minimized. On the other hand, the fault current is also easily limited by large reactance of parallel coil. © 2008 Wiley Periodicals, Inc. Electr Eng Jpn, 164(1): 52–61, 2008; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20315     

Narrow spectral linewidth characteristics of monolithic integrated-passive-cavity InGaAsP/InP semiconductor lasers

The spectral linewidth of 1.3 ?m monolithic integrated-passive-cavity (IPC) semiconductor laser is measured by a delayed self-heterodyne technique. It is found that the line-width is narrowed when longitudinal submode is suppressed. The narrowest linewidth obtained so far is 900 kHz at 6 mW output power.     

Arterial oxygen desaturation during non-sedated diagnostic upper gastrointestinal endoscopy

We studied oxygen saturation (SaO2) using a pulse oximeter in 120 patients undergoing non-sedated diagnostic upper gastrointestinal endoscopy. The baseline SaO2 was 98.3 +/- 1.0%. During the procedure, absence of oxygen desaturation (SaO2 > or = 95%) was found in 56%, mild oxygen desaturation (95% > SaO2 > or = 90%) in 35%, and severe oxygen desaturation (SaO2 < 90%) in 9%. Age (p = 0.56), gender (p = 0.47), smoking (p = 0.35), hemoglobin level (p = 0.52), body mass index (p = 0.27), or total endoscopy time (p = 0.72) was not related to the degree of oxygen desaturation. These results suggest that oxygen desaturation is frequently observed during non-sedated diagnostic upper gastrointestinal endoscopy although severe oxygen desaturation, which may induce rare but serious cardiopulmonary events, is not common. Furthermore, we cannot predict in which patients desaturation will occur. We therefore recommend continuous monitoring of arterial oxygenation in all patients during the procedure.     

Growth of Al2O3 whiskers by vapour-phase reactions

Needle-like or wool-like Al₂O₃ whiskers can be grown on a substrate by the hydrolysis of aluminium fluoride vapour. Effects of the growth conditions on the morphology of the crystals and growth processes of the whisker were investigated, and the optimum growth condition of whiskers was examined. Adequate vapour pressure conditions of the reactant gases for the growth of the wool-like whisker were found to be . Aluminium oxyfluoride was assumed to be the most probable intermediate species for the growth of Al₂O₃ whiskers. A variety of crystal morphologies are also shown and described with respect to the experimental conditions.     

Microscopic study on the polymorphism of Ca3SiO5

The polymorphism of Ca₃SiO₅ has been studied microscopically by following changes in optic properties and modes of twinning of the crystal as a function of temperature. Besides the six modifications already established, a hitherto-unidentified monoclinic phase M₃, which can be characterized only by microscopy at present, has been found to exist just below the rhombohedral phase (R). The transitions $\text{T}{}_2\text{?}\text{T}{}_3\text{et}\text{M}{}_1\text{?}\text{M}{}_2$ that give clear thermal effects on the DTA curve show no corresponding change under the microscope.     

Anisotropic Thermal Expansion of β-Ca2SiO4 Monoclinic Crystal

Crystals of β-Ca₂SiO₄ (space group P 12₁/ n 1) were examined by high-temperature powder X-ray diffractometry to determine the change in unit-cell dimensions with temperature up to 645°C. The temperature dependence of the principal expansion coefficients (α_i) found from the matrix algebra analysis was as follows: α₁= 20.492 × 10⁻⁶+ 16.490 × 10⁻⁹ ( T - 25)°C⁻¹, α₂= 7.494 × 10⁻⁶+ 5.168 × 10⁻⁹( T - 25)°C⁻¹, α₃=−0.842 × 10⁻⁶− 1.497 × 10⁻⁹( T - 25)°C⁻¹. The expansion coefficient α₁, nearly along [302] was approximately 3 times α₂ along the b -axis. Very small contraction (α₃) occurred nearly along [     01]. The volume changes upon martensitic transformations of β↔α_L' were very small, and the strain accommodation would be almost complete. This is consistent with the thermoelasticity.     

Activity measurement of gallium in the B2 phase of the CoGa–Sb system by the EMF method with zirconia-based solid electrolyte

Gallium activity in the B2 phase regions of both binary Co–Ga and ternary Co–Ga–Sb systems was measured by EMF method with stabilized zirconia solid electrolyte The temperature range was 1073–1273 K and Sb concentrations were 1, 2 and 3 mol fractions. Ga activity at 1173 and 1273 K increases sharply in Ga rich region and the addition of Sb to the CoGa phase increases Ga activity. Activity change corresponds to the lattice parameter change with Sb addition to the CoGa phase.