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工艺因素对低压化学气相沉积氮化硅薄膜的影响 总被引:1,自引:0,他引:1
以硅烷和氨气分别做为硅源和氮源,以高纯氮气为载气,采用热壁式管式反应炉,通过低压化学气相沉积(low pressure chemical vapor deposition,LPCVD)技术制备了氮化硅薄膜(SiN_x)。借助椭圆偏振仪研究了SiN_x薄膜的生长动力学,通过Fourier红外光谱和X光电子能谱表征了SiN_x薄膜的性质,并利用原子力显微镜观察了SiN_x薄膜的微观形貌。在其它工艺条件相同的情况下,SiN_x薄膜的生长速率随着工作压力的增大单调增加,原料气中氨气与硅烷的流量之比(R)对薄膜的生长速率有相反的影响。随着反应温度的升高,沉积速率逐渐增加,在840℃附近达到最大,随后迅速降低。当R<2时获得富Si的SiN_x薄膜(x<1.33);当R>4时获得近化学计量(z≈1.33)的SiN_x薄膜。 相似文献
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YW2O6(OH)3:Tb3+ green phosphors were synthesized at different pH values via a facile hydrothermal method. The structure and optical properties of as-synthesized samples were studied by X-ray diffractometer (XRD), scanning electron microscopy (SEM), photolumi-nescence spectra and luminescence decay curve. The results showed that pure monoclinic YW2O6(OH)3:Tb3+ green phosphors could be ob-tained at pH 2-5. Uniform spherical micro-phosphors of ~5 μm in diameter with narrow size distribution could be prepared at pH 5. pH value had dramatic influence on morphologies, which could be ascribed to the various spatial configurations of different poly-tungstates existing at different pH values. The emission spectra under 261 nm excitation exhibited dominant green emission at 546 nm. The green emission inten-sity reached the maximum value at pH 5 due to the high packing density of the obtained phosphor. 相似文献
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