Matrix influence on the piezoelectric properties of piezoelectric ceramic/polymer composite exhibiting particle alignment

This study was addressed to the influence of an electric field strength applied at fabrication process and matrix properties, such as the dielectric constant and the Young's modulus, on “pseudo‐1‐3 piezoelectric ceramic/polymer composite” in order to further enhance the piezoelectricity of that. The pseudo‐1‐3 piezoelectric ceramic/polymer composite consists of linearly ordered piezoelectric ceramic particles in polymer material. Silicone gel, silicone rubber, urethane rubber, and poly‐methyl‐methacrylate, which exhibit different dielectric constants and Young's modulus, were used as matrices to evaluate the matrix influence. The piezoelectricity of the pseudo‐1‐3 piezoelectric ceramic/polymer composite was evaluated using the piezoelectric strain constant d₃₃. The d₃₃ is one of the indices of the piezoelectric properties for piezoelectric materials. As a result, it was confirmed that d₃₃ of the pseudo‐1‐3 piezoelectric ceramic/polymer composite increased with the increase of the electric filed strength applied at fabrication process, though, it reached a constant value at a certain strength value. Further it was confirmed that dielectric constant of the matrix had a small influence on d₃₃ of the pseudo‐1‐3 piezoelectric ceramic/polymer composite, however, in case of matrix of lower Young's modulus, d₃₃ was increase. © 2014 Wiley Periodicals, Inc. J. Appl. Polym. Sci. 2015 , 132, 41817.     

Anatase Sol Prepared from Peroxotitanium Complex Aqueous Solution Containing Niobium or Vanadium

Niobium- or vanadium-doped anatase sols were prepared by hydrothermal treatment of 0.1 mol/dm³ peroxotitanium complex aqueous solutions dissolving 0–10 mol% niobium or vanadium at 100°C for 8 h. Niobium-doping caused the increase of lattice constants of anatase and the shape change of anatase crystal from spindle-like to cubic-like structure, but no change of the optical absorbance. Vanadium-doping caused the decrease of lattice constant of c -axis, the miniaturization of anatase crystal and the increase of optical absorbance at the wavelength from 350–700 nm.     

The effect of ionic cross-links on the deformation behavior of homoblends made of poly(styrene-co-styrenesulfonic acid) and poly(styrene-co-4-vinylpyridine)

Deformation behavior of stoichiometric blends made from poly(styrene-co-styrenesulfonic acid) (SPS) and poly(styrene-co-4-vinylpyridine) (SVP) was investigated by TEM observation of strained thin films. An FTIR investigation revealed that ionic cross-links were formed between the component polymers upon blending due to intermolecular ion-ion interactions, which arose from proton transfer from sulfonic acid groups to pyridine groups. TEM observations indicate that the deformation mode of the blends changed from crazing only to crazing plus shear deformation, with the shear contribution becoming larger, as the ion content in the blends increased. Such changes in deformation mode can be understood as arising from an increase in the ‘effective’ strand density due to the formation of ionic cross-links upon blending. It was also found that the ionic cross-links via pyridinium cation/sulfonate anion ion pairs were more effective in inducing the transition of deformation mode than ionic cross-links via -SO₃⁻/Na⁺ or -SO₃⁻/Ca²⁺ ion pairs.     

Chemical potentials of oxygen for three-phase assemblages of CaSiO3(s) + Ca3Si2O7(s) + {CaO + SiO2 + FexO} melt and Ca3Si2O7(s) + Ca2SiO4(s) + {CaO + SiO2 + FexO} melt

By employing an electrochemical technique involving stabilized zirconia as solid electrolyte and Mo + MoO₂ mixture as reference electrode, the equilibrium oxygen partial pressures for three-phase assemblages of CaSiO₃(s) + Ca₃Si₂O₇(s) + {CaO + SiO₂ + Fe_xO} melt and Ca₃Si₂O₇(s) + Ca₂SiO₄(s) + {CaO + SiO₂ + Fe_xO} melt were determined as: - log {P_O2 (CS + C₃S₂ + L)/bar} = - 3.22 13000/(T/K) ± 0.05 - log {P_O2 (C₃S₂ + C₂S + L)/bar} = - 0.92 16400/ (T/K) ± 0.04. respectively, where CS, C₃S₂ and C₂S indicate CaSiO₃(s), Ca₃Si₂O₇(s). and Ca₂SiO₄(s), respectively.     

Computation of mutual entropy in quantum markov chains

There are several damping phenomena in quantum optics. Such phenomena have been usually explained by open systems. In statistical physics, open system dynamics have been used to study the irreversibility and the approach to equilibrium. In this paper, the dynamical change of the mutual entropy for an open system, frequently studied in the quantum optics literature, is rigorously computed through a model of quantum Markov chain. In particular, the concrete formula of Stinespring expression for such a model is obtained and applied to the derivation of the mutual entropy, and some computational results are presented.     

Linearity stablized fiber-optic thermometer using pseudo-heterodyne phase detection

A temperature sensor using a fiber-optic Fabry-Perot interferometer is described. A pseudo-heterodyne detection scheme is adopted to read the light phase difference in the Fabry-Perot interference output. A higher harmonic components comparison method is used to stabilize the system and to increase detection linearity. This system realizes not only highly sensitive temperature sensing with good linearity and minimal adjusting error, but also application to the sensing of other physical quantities such as vibrations. Additionally, the signal-to-noise ratio and distortion of the detected signal are investigated as functions of fiber end reflectivity. These results will be useful in designing a high performance fiber-optic Fabry-Perot thermometer.     

Differential modes of nuclear localization signal (NLS) recognition by three distinct classes of NLS receptors

The targeting of karyophilic proteins to nuclear pores is mediated via the formation of a nuclear pore-targeting complex, through the interaction of nuclear localization signal (NLS) with its NLS receptor. Recently, a novel human protein, Qip1, was identified from a yeast two-hybrid system with DNA helicase Q1. This study demonstrates that Qip1 is a novel third class of NLS receptor that efficiently recognizes the NLS of the helicase Q1. Moreover, the data obtained in this study show that the specific interaction between Qip1 and the NLS of the helicase Q1 requires its upstream sequence of the minimal essential NLS. By using purified recombinant proteins alone in the digitonin-permeabilized cell-free transport system, it was demonstrated that the two known human NLS receptors, Rch1 and NPI-1, are able to transport all the tested NLS substrates into the nucleus, while Qip1 most efficiently transports the helicase Q1-NLS substrates, which contain its upstream sequence in so far as we have examined the system. Furthermore, in HeLa cell crude cytosol, it was found that endogenous Rch1 binds to all the tested NLS substrates, while the binding of endogenous NPI-1 is restricted to only some NLSs, despite the fact that NPI-1 itself shows binding activity to a variety of NLSs. These results indicate that at least three structurally and functionally distinct NLS receptors exist in the human single cell population, and suggest that the nuclear import of karyophilic proteins may be controlled in a complex manner at the NLS recognition step by the existence of a variety of NLS receptors with various specificities to each NLS.     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.