EFFECT OF DEVELOPER PROPERTIES ON PRINT QUALITY

We investigated the dependence of the toner charge-to-mass ratio (q/m) in a two-component electrophotographic developer on the shaking time, toner concentration (T/C), carrier sizes, and the carrier core and the coating materials, as well as the resulting print qualities in terms of print density, background density, tone reproduction, resolution, and dot gain. Four different sizes of spherical ferrite carriers, four different carrier coating materials, and an irregular iron carrier were used with two types of toner: 14 um red toner (NP-4080) and 8 um cyan toner (CLC-500). The q/m measurement by the blow-off method showed that the red toner charge was positive while the cyan toner charge was negative with these carriers. The toner q/m values, which depended on the shaking time and decreased with the increasing T/C were much more affected by the larger carrier and the smaller toner. The carriers which yielded charges in the proper range produced better print qualities than did the other carriers that yielded a toner q/m     

一种独特和可靠的厚/薄铜复合PWB

本文论述一种厚/薄铜复合PWB(及其可靠性),它允许PWB设计者在厚铜和薄铜之间以任何希望的图形进行随意选择,以使电源模块/分配电路可以和精细图形特征一起集成,从而适应离I/O数半导体封装的要求。     

370 W output power GaN-FET amplifier for W-CDMA cellular base stations

A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm/sup 2/ is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.     

Diffusional behavior of multi-arm star polymers by H pulsed field gradient spin-echo NMR method

The diffusional behavior of multi-arm star-shaped p(tBMA) was investigated in a concentration range from dilute to semidilute region with ¹H pulsed field gradient spin-echo NMR (PFGSE-NMR). An 142-arm star-shaped p(tBMA) showed two diffusional mode, which reflected the coexistence of liquid ordering phase and liquid phase near the ordering transition. On the other hand, for star-shaped p(tBMA) with 55 arms showed a single diffusional relaxation in all concentration ranges during observation time. In the semidilute region, the relationship between the diffusion coefficient against the polymer concentration was affected strongly not only the arm number but also liquid ordering structure.     

Photocatalytic Property and Electronic Structure of Lanthanide-based Oxysulfides

Lanthanide-based oxysulfides and sulfide, LnTaO_3.5S_0.5, Ln₁₀OS₁₄ (Ln = La, Pr, Nd, Sm) and La₄In₅S₁₃, were successively synthesized by sulfurization in a flowing H₂S. The sulfurization decreased the band-gap energies from >4 eV to <3eV, because of the formation of occupied S3p orbitals on the top of valence band. In accordance with the small band gap, the H₂ evolution from a 0.01 M Na₂S and 0.01 M Na₂SO₃ solution system was observed under irradiation of light up to >500 nm. The rate of H₂ evolution under light irradiation of >500 nm increased in the order of Ni/LaTaO_3.5S_0.5 < Ru/La₁₀OS₁₄ < Pt/La₄In₅S₁₃.     

A slotted post-wall waveguide array with interdigital structure for 45/spl deg/ linear and dual polarization

This work proposes a dual-polarized planar antenna; two post-wall slotted waveguide arrays with orthogonal 45/spl deg/ linearly-polarized waves interdigitally share the aperture on a single layer substrate. Uniform excitation of the two-dimensional slot array is confirmed by experiment in the 25 GHz band. The isolation between two slot arrays is also investigated in terms of the relative displacement along the radiation waveguide axis in the interdigital structure. The isolation is 33.0 dB when the relative shift of slot position between the two arrays is -0.5/spl lambda//sub g/, while it is only 12.8 dB when there is no shift. The cross-polarization level in the far field is -25.2 dB for a -0.5/spl lambda//sub g/ shift, which is almost equal to that of the isolated single polarization array. It is degraded down to -9.6 dB when there is no shift.