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We report the recent result of GaAs/GalnP dual-junction solar cells grown by all solid-state molecularbeam-epitaxy (MBE). The device structure consists of a GaIn0.4sP homojunction grown epitaxially upon a GaAs homojunction, with an interconnected GaAs tunnel junction. A photovoltaic conversion efficiency of 27% under the AM1.5 globe light intensity is realized for a GaAs/GaInP dual-junction solar cell, while the efficiencies of 26% and 16.6% are reached for a GaAs bottom cell and a GaInP top cell, respectively. The energy loss mechanism of our GaAs/GalnP tandem dual-junction solar cells is discussed. It is demonstrated that the MBE-grown phosphide-containing Ⅲ-V compound semiconductor solar cell is very promising for achieving high energy conversion efficiency. 相似文献
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本文报道了氧化铟锡(ITO)分别与金属和半导体的接触电阻率。采用电子束蒸发的手段制备高质量ITO材料。薄膜电阻率为2.32×10-4 Ω?cm,可见光范围透射率为92.8%,禁带宽度为3.804 eV。采用圆点型传输线模型的方法,对ITO/金属和ITO/n型GaAs之间的接触电阻进行了分析。测得ITO与Ni之间最低接触电阻率为2.81×10-6 Ω?cm2 ,ITO与n型砷化镓之间的接触电阻低至7×10-5 Ω?cm2,这是目前所报道的最好的结果。根据以上结果,我们可以确定将ITO应用在GaAs基太阳电池中来提升器件的性能。 相似文献
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采用Ar气保护制备了Mg-5Sn-1Si(质量分数,%)合金,并研究了合金的铸态组织和在480℃固溶处理及180℃和280℃不同时效热处理对合金组织中析出相演变的影响及组织与硬度的关系。结果表明,合金铸态组织由α-Mg、共晶Mg2Si、共晶Mg2Sn三相组成;经480℃固溶处理后Mg2Sn相完全固溶,粗大的Mg2Si相得到少量球化;时效处理过程中Mg2Si相得到球化。在180℃时效时,Mg2Sn无沉淀析出,硬度较低,时效保温24 h仅为24.1 HV。在280℃时效时,细小的Mg2Sn相弥散析出并使合金的硬度明显升高,时效保温18 h达到峰值硬度47.6 HV,并随时间的延长出现过时效现象。280℃时效初期,组织中形成较宽的无析出带(PFZ),随着时效时间的延长无析出带PFZ消失。 相似文献
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