非晶硅太阳能电池背反ZnO:Al薄膜制备

以ZnO:Al(2%Al2O3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响。结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响。ZnO:Al的电阻率主要取决于衬底温度和溅射功率。综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反应腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10-4Ωcm的ZnO:Al薄膜。制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池。与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%。     

硅基薄膜光电性能测试技术——电导温度曲线和光电导衰退的测试

介绍了硅基薄膜电导温度曲线和光电导衰退测试设备和方法,包括测试设备、采集数据的方法及测试的操作规程等.     

硼掺杂硅薄膜及其在叠层电池隧道结中的应用

Boron-doped hydrogenated silicon films with different gaseous doping ratios（B2H6/SiH4） were deposited in a plasma-enhanced chemical vapor deposition（PECVD） system.The microstructure of the films was investigated by atomic force microscopy（AFM） and Raman scattering spectroscopy.The electrical properties of the films were characterized by their room temperature electrical conductivity（σ） and the activation energy（Ea）.The results show that with an increasing gaseous doping ratio,the silicon films transfer from a microcrystalline to an amorphous phase,and corresponding changes in the electrical properties were observed.The thin boron-doped silicon layers were fabricated as recombination layers in tunnel junctions.The measurements of the I-V characteristics and the transparency spectra of the junctions indicate that the best gaseous doping ratio of the recombination layer is 0.04,and the film deposited under that condition is amorphous silicon with a small amount of crystallites embedded in it.The junction with such a recombination layer has a small resistance,a nearly ohmic contact,and a negligible optical absorption.     

用于静电场描绘的二维运动系统设计

传统的电场描绘试验需要学生手动移动探针采集少数等势点,再手绘等势线,过程繁杂且容易出现误差。为克服传统试验的弊端,实现各点电势的自动化测试,需要设计一款用于电场描绘的二维运动系统。利用STM32输出两路脉冲宽度调制(PWM)脉冲分别控制X轴和Y轴的步进电机,实现逐行扫描。将该二维运动系统与装有Free Cars软件的上位机联合,可以实现对各点电势数据的采集。由STM32处理电势数据并将其发送到上位机进行显示与存储。试验结果表明:该系统实现了电压探针的自动扫描和电压数据的采集。系统结构简单、工作逻辑清晰,符合测量技术的发展趋势,具有一定的应用和推广价值。     

酞菁锌/氢化非晶硅复合薄膜光电性质的研究

Composites consisting of hydrogenated amorphous silicon （a-Si： H, inorganic） and zinc phthalocyanine （ZnPc, organic） were prepared by vacuum evaporation of ZnPc and sequential deposition amorphous silicon via plasma enhanced chemical vapor deposition （PECVD）. The optical and electrical properties of the composite film have been investigated. The results demonstrate that ZnPc can endure the temperature and bombardment of the PECVD plasma and photoconductivity of the composite film was improved by 89.9% compared to pure a-Si： H film. Electron mobility-lifetime products/lr of the composite film were increased by nearly one order of magnitude from 6.96 × 10^-7 to 5.08 × 10^-6 cm2/V. Combined with photoconductivity spectra of the composites and pure a-Si： H, we tentatively elucidate the improvement in photoconductivity of the composite film.     

新型迈克尔逊干涉条纹测控装置研制

为减小背景光的影响,传统的迈克尔逊干涉试验需要在黑暗中进行,不便读取毫米刻度尺、粗调鼓轮读数窗口和微调鼓轮读数窗口的读数。而人工计数需要长时间盯着观测屏计数,容易因眼睛疲劳、视野模糊而导致计数误差。为此,设计了一种新型迈克尔逊干涉条纹测控装置。该装置以上位机为核心,结合单片机、步进电机驱动器和步进电机控制迈克尔逊干涉仪读数鼓轮转动,实现了可动反射镜的移动;利用采集卡、硅光电池、电压信号放大器等测量干涉条纹圆心处的亮度;通过调整采集周期,消除步进电机抖动对试验测量的影响;利用条纹圆心处的光强变化与可动反射镜移动距离之间的关系,计算激光波长。试验结果表明,新型迈克尔逊干涉条纹测控装置可以代替人眼进行读数和计数,在解决试验人员条纹计数困难的同时,消除了条纹计数误差的影响、提高了测量的效率和准确性。该装置可用于测量光波波长、微小位移、薄膜厚度、介质折射率和线胀系数,以及研究温度和压力对光传播的影响。     

紫外光照下偶氮香蕉型液晶的光吸收特性研究

借助紫外可见光谱仪观测和电子结构计算，研究了紫外光照对偶氮香蕉型液晶电子结构和光吸收特性的影响。吸收光谱显示：这种液晶的两个光学吸收峰分别位于360nm和275 nm。电子结构计算表明：这两个光学吸收主要来自于液晶中含偶氮官能团的电子跃迁。结果表明：36５nm光子可将液晶中的氮氮双键打断，从而导致其在360nm处的吸收迅速降低，同时使275 nm处的吸收相应增加。