Statistical properties of out-of-frame detection schemes fordigital transmission systems

The importance of the misframe times for DS1 frame synchronization has often been addressed in designing and using network elements and mediation units. By extending the work of J. H. Eu and W. W. Rollins (1991), Markov chain first passage time analysis is used to derive higher moments of the misframe times in both random and burst error environments. This methodology is of great value in evaluating frame synchronization techniques for digital transmission systems. By experimenting with several out-of-frame detection schemes and reasonable values for bit error ratio (BER), it is shown that misframe times are always approximately exponentially distributed for all schemes     

Synthesis of polystyrene/poly(butyl acrylate) core–shell latex and its surface morphology

A polystyrene (PS)/poly(butyl acrylate) (PBA) composite emulsion was produced by seeded emulsion polymerization of butyl acrylate (BA) with PS seed particles which were prepared by emulsifier‐free polymerization of styrene with potassium persulfate (KPS) under a nitrogen atmosphere at 70°C for 24 h with stirring at 60 rpm and swelled with the BA monomer in an ethanol/water medium. The structure of the PS/PBA composite particles was confirmed by the presence of the characteristic absorption band attributed to PS and PBA from FTIR spectra. The particles for pure PS and PS/PBA with a low content of the BA monomer were almost spherical and regular. As the BA monomer content was increased, the particle size of the PS/PBA composite particles became larger, and more golf ball‐like particles were produced. The surface morphology of the PS/PBA composite particles was investigated by AFM and SEM. The T_g's attributed to PS and PBA in the PS/PBA composite particles were found at 110 and ?49°C, respectively. The thermal degradation of the pure PS and PS/PBA composite particles occurred in one and two steps, respectively. With an increasing amount of PBA, the initial thermal decomposition temperature increased. On the contrary the residual weight at 450°C decreased with an increasing amount of PBA. © 2003 Wiley Periodicals, Inc. J Appl Polym Sci 88: 595–601, 2003     

Growth and characterization of Si doped vapor phase epitaxial GaAs for mesfet

This paper describes the Si-doping of GaAs that was grown using the AsCl₃:H₂:GaAs, Ga Chemical vapor deposition process. The doping sources were AsCl₃:SiCl₄ liquid solutions which proved to be highly reproducible for Si doping within the range, 1×1O¹⁶ to 2×10¹⁹ cm^?3. Incorporation of Si into the GaAs apparently occurs under near equilibrium conditions. This point is considered in detail and the consequences experimentally utilized to grow n, n+ bilayers using a single AsCl₃:SiCl₄ doping solution. Si impurity profiles based upon differential capacitance and SIMS data are presented. These can be very abrupt for n, n⁺ structures with order of magnitude changes occurring within 500 Å. For the 1×10₁₆ to 8×l0¹⁸ cm^?3 doped samples the mobilities at 78 and 298°K are comparable to the higher values reported for GaAs thin films grown by CVD. Power FET devices made from this material have demonstrated an output density of 0.86 watts/mm at 10 GHz.     

化学课程中数字化教学设计的探索

数字化教学是现代信息技术支撑下的一种新型教学方式,它要求教师不断完善自身知识结构、掌握现代教育技术和先进教育理念,才能应对数字化教学的变革。通过探讨化学课程中如何应用数字化教学手段、采取不同的教学设计,来改革现行的教学内容和教学方式,以培养学生的信息素养、合作能力和解决实际问题的能力。     

Design and performance analysis of MAC schemes for Wireless Sensor Networks Powered by Ambient Energy Harvesting

Energy consumption is a perennial issue in the design of wireless sensor networks (WSNs) which typically rely on portable sources like batteries for power. Recent advances in ambient energy harvesting technology have made it a potential and promising alternative source of energy for powering WSNs. By using energy harvesters with supercapacitors, WSNs are able to operate perpetually until hardware failure and in places where batteries are hard or impossible to replace. In this paper, we study the performance of different medium access control (MAC) schemes based on CSMA and polling techniques for WSNs which are solely powered by ambient energy harvesting using energy harvesters. We base the study on (i) network throughput (S), which is the rate of sensor data received by the sink, (ii) fairness index (F), which determines whether the bandwidth is allocated to each sensor node equally and (iii) inter-arrival time (γ) which measures the average time difference between two packets from a source node. For CSMA, we compare both the slotted and unslotted variants. For polling, we first consider identity polling. Then we design a probabilistic polling protocol that takes into account the unpredictability of the energy harvesting process to achieve good performance. Finally, we present an optimal polling MAC protocol to determine the theoretical maximum performance. We validate the analytical models using extensive simulations incorporating experimental results from the characterization of different types of energy harvesters. The performance results show that probabilistic polling achieves high throughput and fairness as well as low inter-arrival times.     

Correlation between chemical and electrical profiles in Si+, Se+ and S+ implanted bulk and epitaxial GaAs

We compare the chemical profiles of Cr, Mn, Si and Se with the electron concentration profiles in Si, Se and S implanted semi-insulating Cr-O doped bulk GaAs substrates and undoped VPE buffer layers annealed with and without a SiO₂ encapsulant in a H₂-As₄ atmosphere. A higher activation efficiency in the net electron concentration and the gateless saturated channel current is measured for SiO₂ encapsulated wafers annealed under arsine overpressure than for capless annealed ones using Cr-O doped bulk GaAs substrates. On the other hand, the net donor concentration peak is higher for implanted buffer epi layers capless annealed under arsine overpressure than for SiO₂ encapsulated ones. Secondary ion mass spectrometry (SIMS) studies of the Cr decoration of the implant damage indicate that the damage from the 100 keV Si implant anneals out at 840°C while a temperature of 900°C is required to anneal out the 260 keV Se implant damage. An explanation of these differences is provided using an impurity redistribution model and charge neutrality considerations. Excellent Hall electron mobilities at liquid nitrogen temperature of 5400–9200 cm²/V-sec are measured for Si-implanted buffer epi substrates.     

NM23-H1 immunostaining is inversely associated with tumour staging but not overall survival or disease recurrence in colorectal carcinomas

The NM23-H1 gene product has been recently identified as a potential metastasis suppressor. Studies on breast carcinomas have shown an inverse correlation between NM23-H1 status and stage of carcinogenesis and overall survival. However, in colorectal cancer, conflicting data have been reported. This study aimed to investigate whether NM23-H1 immunostaining is correlated with tumour stage, overall survival, disease recurrence, tumour differentiation, age and sex in colorectal carcinomas for the Singapore population using chi-square analysis. The staining was performed on 141 paraffin-embedded surgical specimens collected between 1991 and 1992 using a monoclonal anti-NM23-H1 antibody. Follow-up of patients was until time of death or for 5 years. There was a very significant inverse association between tumour staging and NM23-H1 status (P = 0.0004). However, NM23-H1 expression was not significantly correlated to overall 5-year survival, disease recurrence, tumour differentiation, age or sex. Thus, although NM23-H1 may be involved in suppressing metastasis, NM23-H1 immunohistochemistry has no prognostic value in colorectal cancer. This is the first report of a significant inverse association of NM23-H1 status with tumour staging in colorectal cancer which showed no correlation with overall survival or disease recurrence. Our result thus cautions against the practice of equating an inverse relation of genetic markers with tumour staging to survival or disease recurrence.