GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganicchemical vapour deposition

The performance of an innovative delta-doped AlGaN/AlN/GaN heterojunction field-effect transistor (HFET) structure is reported. The epitaxial heterostructures were grown on semi-insulating SiC substrates by low-pressure metalorganic chemical vapour deposition. These structures exhibit a maximum carrier mobility of 1058 cm²/V s and a sheet carrier density of 2.35×10¹³ cm^-2 at room temperature, corresponding to a large n_s μ_n product of 2.49×10¹⁶ V s. HFET devices with 0.25 μm gate length were fabricated and exhibited a maximum current density as high as 1.5 A/mm (at V_G=+1 V) and a peak transconductance of g_m=240 mS/mm. High-frequency device measurements yielded a cutoff frequency of f_t≃50 GHz and maximum oscillation frequency f_max≃130 GHz     

Determination du coefficient d'extinction molaire de OH− dans les verres fluores a base de metaux lourds

The extinction coefficient ? at 2.9 μm for OH in fluoride glasses is measured by determining the amount of HF evolved during heating of the glass under steam and the corresponding intensity of the OH absorption band. This coefficient is respectively equal to 31 litre mole^?1 cm^?1 for BTYbZ glass (15 BaF₂ - 29 ThF₄ - 28 YbF₃ - 28 ZnF₂) and 19.5 litre mole^?1 cm^?1 for BALLA glass (34 BaF₂ - 57 ZrF₄ - 4 AlF₃ - 5 LaF₃).     

Preparation and Characterization of Inorganic Fluorides—Fullerenes Compounds

Reaction of metallic fluorides: WF₆ TaF₅, NbF₅ and TiF₄ with C₆₀/C₇₀ extract was performed at appropriate temperatures. M0F₅ and BF₃ fluorides do not react. Chemical formulas based on mass uptake show MF_n/C₆₀ ratios up to 2.00. Compounds were analysed by means of X-ray diffraction, FT-IR and NMR spectroscopies. The presence of neutral fluorides and associated anionic species is put forward and it is shown that MF_n compounds do not act as fluorination agents. Electrical conductivity measurements are also presented.     

Perturbation of an elementary logic system submitted to the effects induced by a perturbing sine wave

Data transmission networks and systems are often subject to perturbations due to the fact that (low level) data signals are surrounded by perturbing electromagnetic fields. This paper presents and analyses information perturbing mechanisms. The authors examine data streams transmitted by an elementary system which represents the basis of any electronic device. We show the influence of technological families of cmos circuits and present a test method and bench to investigate the sensitivity of devices under test by means of statistical parameters.     

Reactivity of steam in exhaust gas catalysis III. Steam and oxygen/steam conversions of propane on a Pd/Al2O3 catalyst

A 1% Pd catalyst (38% dispersion) was prepared by impregnating a γ-alumina with palladium acetylacetonate dissolved in acetone. The behaviour of this catalyst in oxidation and steam reforming (SR) of propane was investigated. Temperature-programmed reactions of C₃H₈ with O₂ or with O₂ + H₂O were carried out with different stoichiometric ratios S(S =[O₂]/5[C₃H₈]). The conversion profiles of C₃H₈ for the reaction carried out in substoichiometry of O₂ (S < 1) showed two discrete domains of conversion: oxidation at temperatures below 350°C and SR at temperatures above 350°C. The presence of steam in the inlet gases is not necessary for SR to occur: there is sufficient water produced in the oxidation to form H₂ and carbon oxides by this reaction. Contrary to what was observed with Pt, an apparent deactivation between 310 and 385°C could be observed with Pd in oxidation. This is due to a reduction of PdO_x into Pd⁰, which is much less active than the oxide in propane oxidation. Steam added to the reactants inhibits oxidation while it prevents the reduction of PdO_x into Pd⁰. Compared to Pt and to Rh, Pd has a higher thermal resistance: no deactivation occurred after treatment up to 700°C and limited deactivation after treatment up to 900°C, provided that the catalyst is maintained in an oxygen-rich atmosphere during the cooling.     

Phase Equilibria in the Na2O-Cs2O-SiO2 System

The Na₂O-Cs2O-SiO₂ system has been investigated by means of a new differential thermal analysis apparatus. Two compounds have been observed for the first time in the metasilicate and disilicate joins. The CsNaSi₂O₅ disilicate melts congruently at 1217 K and the peritectic fusion of the CsNaSiO₃ metasilicate occurs at 1120 K.