Microscopic Damage of Tungsten and Molybdenum Exposed to Low-Energy Helium Ions

Polycrystalline tungsten(W)and molybdenum(Mo)materials both non-annealed and annealed at temperatures of 800-1750~C have been irradiated with low-energy(220 eV),high-flux(~10~(21)ions/m~2.s)He~+at an irradiation temperature of 600℃and at a dose of1.0×10~(25)ions/m~2.This non-destructive conductive atomic force microscopy technique provides direct observation and comparison of surface swellings with growth of nanoscale defects in the irradiated materials.A coral-like surface structure and nanostructured defects were formed in W when irradiated at a He+dose of 1.0×10~(25)ions/m~2.Increasing the annealing temperature resulted in an increase in the size of nanostructured defects and serious surface damage of W.Compared to W,Mo suffered much less surface damage after being irradiated at various He~+doses.     

氦离子辐照下钨纳米丝的自保护行为

采用低能量(200 eV)大流强的He⁺辐照多晶钨材料,辐照温度为1023 K和1373 K,辐照剂量为1.0×10²⁵~1.0×10²⁶ ions/m²。用称重、扫描电子显微镜、导电原子力显微镜等手段分析辐照后钨材料的质量损失、表面形貌和内表面缺陷分布,研究了刻蚀速率与表面形貌的关系。结果表明,具有粗糙钨纳米丝表面的钨样品刻蚀速率只有平滑表面的30%。其原因是,在大流强He⁺辐照下钨表面纳米丝的形成阻碍钨原子的溅射。这也意味着,钨纳米丝表面的形成可作为钨材料的自保护结构层,抑制ITER相关辐照下的强刻蚀。     

低能大流强氢离子辐照对钨的刻蚀行为

在聚变相关的钨(W)偏滤器辐照下,研究了低能大流强氢(H)离子辐照对多晶钨材料的刻蚀行为。使用扫描电子显微镜(SEM)、导电原子力显微镜和基于SEM的电子背散射衍射等手段研究了大流强(~10²² ions/m²·s)、剂量为1.0×10²⁶ ions/m²、能量为5~200 eV的氢离子辐照对多晶W材料表面刻蚀行为的影响。结果表明,随着H离子辐照能量的增加W的溅射率迅速提高,W表面发生刻蚀后产生条纹状结构,而且同一晶粒上条纹的方向具有一致性,条纹两侧的缺陷分布明显不同,意味着W表面的刻蚀优先沿某一特定晶面方向进行。