Bulk traps in ultrathin SIMOX MOSFET's by current DLTS

Bulk traps in very thin ( ~100-nm) SIMOX films have been studied by applying current deep-level transient spectroscopy (DLTS) to fully depleted, enhancement MOS transistors, fabricated in these films. The effect of states at both the front and back SiO₂-Si interfaces is eliminated by suitable biasing. Using this technique, a bulk trap with energy level 0.44 eV above the valence-band edge, capture cross section ~10^-17 cm², and concentration ~10 ¹⁵ cm^-3, which is believed to be due to iron contamination, has been identified     

Neural Networks for Full-Scale Protein Sequence Classification: Sequence Encoding with Singular Value Decomposition

A neural network classification method has been developed as an alternative approach to the search/organization problem of protein sequence databases. The neural networks used are three-layered, feed-forward, back-propagation networks. The protein sequences are encoded into neural input vectors by a hashing method that counts occurrences ofn-gram words. A new SVD (singular value decomposition) method, which compresses the long and sparsen-gram input vectors and captures semantics ofn-gram words, has improved the generalization capability of the network. A full-scale protein classification system has been implemented on a Cray supercomputer to classify unknown sequences into 3311 PIR (Protein Identification Resource) superfamilies/families at a speed of less than 0.05 CPU second per sequence. The sensitivity is close to 90% overall, and approaches 100% for large superfamilies. The system could be used to reduce the database search time and is being used to help organize the PIR protein sequence database.     

Insulin resistance and hypertension in non-obese Africans in Tanzania

OBJECTIVE: This study was done to evaluate the differences in base deficit (BD) clearance, pH normalization, and the occurrence of complications between survivors and nonsurvivors after trauma. DESIGN: Concurrent data entry with retrospective review. METHODS: Trauma patients meeting registry criteria from July 1990 through August 1995 with arterial blood gases performed within 1 hour of admission and admission BD < or = -6 were included. Data was grouped by BD category (moderate, -6 to -9; severe, < or = -10). Group means +/- SEM were compared with a two-tailed t test. MEASUREMENTS and MAIN RESULTS: Six hundred seventy-four patients met entry criteria. Survivors in both the moderate and severe BD groups had improved their BD within 4 hours and normalized their BD by 16 hours. Nonsurvivors did not improve their BD category until 8 hours (for the severe group) and 16 hours (for the moderate group) and did not normalize BD before 24 hours. The BD differences between survivors and nonsurvivors were significant at each time interval, whereas pH differences were significant at 2 hours in the moderate group and at 2, 16, and 24 hours in the severe group. Patients who failed to improve their BD > -6 had an increased frequency of adult respiratory distress syndrome, multiple organ failure, and mortality. CONCLUSION: Base deficit reveals differences in metabolic acidosis between survivors and nonsurvivors not shown by pH determinations and is clearly a better marker of acidosis clearance after shock.     

A spatially resolved physical model for transient system analysis of high temperature fuel cells

This work builds upon previous high temperature fuel cell (HT-FC) modeling studies, capturing both steady state performance and transient behavior of HT-FC stacks by merging simplified dimensional aspects of a planar fuel cell stack with first principles physical modeling. Dynamic simulations are developed that spatially resolve fluctuations in temperature, pressure and concentration distributions during transient operation. A significant portion of the heat transfer occurs prior to and after the air passes over the electrochemically active portions of the cell, justifying additional heat transfer pathways from the stack to the air in order to accurately characterize the thermal transients and temperature distributions in the HT-FC stack. The highly configurable MatLab-Simulink® model developed can simulate both solid oxide and molten carbonate fuel cells utilizing either direct or indirect internal reforming. The perturbation response characteristics of the dynamic model to load, fuel flow, air flow and composition perturbations are discussed, and control strategies are introduced that minimize temperature fluctuations. Analysis indicates air flow and inlet temperature controls are sufficient to control average temperature and average internal temperature gradients. Internal heat transfer dynamics substantially change the spatial temperature distribution and local temperature gradients during typical operating conditions and perturbations.     

Low-frequency noise characterization of n- and p-MOSFET's withultrathin oxynitride gate films

MOSFET's with ultrathin (5 to 8.5 nm) silicon oxynitride gate film prepared by low-pressure rapid thermal chemical vapor deposition (RTCVD) using SiH₄, N₂O and NH₃ gases, are studied by low-frequency noise measurements (1 Hz up to 5 kHz). The analysis takes into account the correlated mobility fluctuations induced by those of the interfacial oxide charge. The nitrogen concentration, determined from SIMS analysis, varies from 0 to 11% atomic percentage. A comparison of the electrical properties between thermal and silicon oxynitride films is presented. The increasing LF noise signal with nitrogen atomic percentage indicates the presence of a higher density of slow interface traps with increasing nitrogen incorporation. Besides, a higher Coulomb scattering rate due to the nitridation induced interface charge explains reasonably well the degradation of the low field mobility after nitridation     

Impact of acute pulmonary rejection on cardiac function

BACKGROUND: Experiments were designed to define cardiac function in dogs with single lung allografts during acute rejection of the allografted lung. METHODS AND RESULTS: Left lungs were either autotransplanted (n = 4) or allotransplanted (n = 8) in adult male mongrel dogs. All allotransplanted animals were maintained on triple-drug immunosuppression (cyclosporine, azathioprine, and steroids) for 5 days after the operation. In 4 allotransplanted animals, treatment was discontinued, allowing the animals to reject (usually after a further 3 days; rejecting group); 4 other allotransplanted animals were maintained on immunosuppression for an additional 3 days (immunosuppressed group). Another group of dogs were not operated on but were maintained on the same immunosuppression as the rejecting group (controls). All experimental animals underwent fast computed tomographic scanning with measurement of left ventricular pressure and calculation of ventricular chamber volumes, cross-sectional areas of coronary arteries, myocardial perfusion, and intramyocardial blood volume. Neither cardiac output, left ventricular mass, left ventricular pressure, nor myocardial oxygen consumption was altered during acute rejection of lung allografts. However, left ventricular contractility (systolic elastance, Emax) and ejection fraction were depressed to approximately one half (P < .05) in acutely rejecting animals compared with other groups. The cross-sectional area of the coronary arteries was less in autotransplanted and allotransplanted treated animals than in animals that were not operated on. Cross-sectional area of the coronary arteries was decreased by an additional 30% in the rejecting group (P < .05). CONCLUSIONS: The results of this study indicate that acute rejection of a single lung allograft decreases cardiac performance and reduces diameter of coronary arteries in the recipient. Alterations of circulating humoral factors and activated leukocytes may contribute to these changes.     

Single-wafer cluster tool performance: an analysis of the effectsof redundant chambers and revisitation sequences on throughput

Recent trends in the semiconductor industry indicate the need to explore alternatives to batch-wafer manufacturing. One proposed alternative is a micro-factory based on cluster tools. This paper presents an analysis of the effect of redundant chambers and chamber revisitation process sequences on the throughput in an individual cluster tool. Theoretical models which quantify the time required to process a lot of wafers in a cluster tool are developed for these situations. The differences between scheduling algorithms which use the load-lock as a queue and those that do not are also explored. Finally, the models developed in the work are integrated into a model which bounds the minimum theoretical turn-around-time which can be achieved in a cluster based fab     

Optimization of SIMOX for VLSI by electrical characterization

A comprehensive electrical characterization study which was conducted to optimize the fabrication of SIMOX substrates for VLSI is discussed. The oxygen implantation was carried out using medium-current and high-current implanters. The wafers were annealed at 1275°C and 1300°C to produce high-quality, precipitate-free material. The effect of dose, the effect of multiple implantation (by sequentially implanting and annealing), and the effect of the anneal ambient gas and the capping layer during annealing were studied. MOSFETs of various geometries with a gate oxide of ~20 nm were fabricated by a CMOS process incorporating the addition of a thin epitaxial Si layer. A general evaluation of each transistor was conducted by studying its static characteristics. The interface states, bulk traps, and carrier generation phenomena were studied. Good-quality interfaces were obtained. Better implantation control reduced contamination and suppressed deep traps below the detection limit. Multiple implantation resulted in superior material quality. as evidenced by very long generation lifetime values (> 100 μs)     

The effect of post-implantation annealing temperature on the deep states present in SIMOX MOSFET’s as observed using enhancement mode current DLTS

The effect of various post-implantation annealing temperatures on the deep states present in SIMOX transistors is studied using enhancement mode current DLTS. Two electron traps were detected at 0.45 eV and 0.33 eV below the conduction band edge; both were removed by post-implantation annealing at a temperature of 1275° C. The ability to anneal these states suggests that they are due to the presence of defect structures which are themselves removed during this annealing. Hole traps were also detected at 0.47 eV and 0.38 eV above the valence band edge; however these traps were not removed by high temperature annealing. It is believed that these hole traps are related to the presence of iron contamination.