Crystallographic characteristics and microwave dielectric properties of Ni-modified MgTa2O6 ceramics

Ni²⁺ modified MgTa₂O₆ ceramics with a trirutile phase and space group P4₂/mnm were obtained. The correlations between crystallographic characteristics and microwave dielectric performance of MgTa₂O₆ ceramics were systematically studied based on the chemistry bond theory (PVL theory) for the first time. The results indicate that the introduction of Ni²⁺ causes a change in polarizability and the Mg–O bond ionicity, which contributes to the variation of dielectric constant. Moreover, the lattice energy, and packing fraction, full width at half maximum of the Raman peak of Ta–O bond, as the quantitative characterization of crystallographic parameters, regulate the dielectric loss of MgTa₂O₆ ceramics in GHz frequency band. In addition, the study of sintering behavior shows that the densification and micromorphology are the crucial factors affecting the microwave dielectric performance. Typically, Ni²⁺ doping on the A-site of MgTa₂O₆ can effectively promote the Q × f values to 173,000 GHz (at 7.43 GHz), which ensures its applicability in 5G communication technology.     

Investigation of crystal characteristics,Raman spectra,and microwave dielectric properties of Mg1-xZnxTa2O6 ceramics

Mg_(1-x)Zn_xTa₂O₆ (x = 0.00?0.08) dielectric ceramics were synthesized via the traditional solid-state reaction method. We used XRD and Rietveld refinement to demonstrate that a pure Mg_(1-x)Zn_xTa₂O₆ phase with trirutile structure was formed. Zn²⁺ substitution helped to decrease the Raman full width at half width of the A_1g mode at 703 cm^?1, which resulted in an increase in the order and rigidity of the TaO₆ octahedron, this in turn contributed to improving the Q×f values. Additionally, the introduction of Zn²⁺ significantly promoted grain growth and increased the dense, and the molecular polarizability, these factors lead to a higher permittivity. Moreover, enhanced Ta-O bond energy resulted in a more stable TaO₆ octahedron in the Mg_(1?x)Zn_xTa₂O₆ system, which contributed to enhanced τ_f values via substitution of Zn²⁺ doped on the A-site. Correspondingly, the microwave dielectric properties were significantly improved for 0.04-doped samples, obtaining: ε_r = 27, Q × f = 185,000 GHz (at 7.47 GHz), τ_f =32 ppm/°C.     

Effect of complexation of oxidised corn starch with mineral elements on physicochemical properties

The objective of this study was to determine the effect of complexation of oxidised starch with mineral elements on its physicochemical properties. Corn starch was oxidised with sodium hypochlorite and, afterwards, modified with ions of potassium, magnesium and iron. Thus, native and modified starches were analysed for: contents of mineral elements, colour parameters (L*a*b*), water binding capacity and solubility in water at temperature of 60 and 80 °C. Thermodynamic characteristics of gelatinisation by DSC, molecular weight distribution by GPC, intrinsic viscosity and pasting properties by RVA were studied. The efficiency of incorporation of metal ions into oxidised corn starch was about 30%, 20% and 20% for potassium, magnesium and iron ions, respectively. The complexation with potassium ions caused the greatest changes in the molecular weight distribution and the intrinsic viscosity of starches and viscosity of starch pastes. Only modification of starch with iron ions affected the colour parameters of the starch. Incorporation of metal ions into starch resulted also in changes in its water binding capacity and solubility in water.     

高熵氧化物的制备及应用研究进展

高熵氧化物作为近几年发展起来的新型氧化物体系，打破了传统掺杂氧化物的设计理念，由五种及以上氧化物以等摩尔或近等摩尔构成，因其具有简单的结构和优异的性能等受到国内外研究人员的广泛关注。高熵氧化物由于多主元且主元之间混乱排列，易形成岩盐型、氟化钙型、尖晶石型或钙钛矿等固溶体结构，从而表现出优异的性能，尤其在能源存储材料和磁性材料方面有十分广阔的应用前景，但目前对高熵氧化物应用研究较少。本工作介绍了国内外高熵氧化物的制备方法，主要包括固相法、热解法、共沉淀法、水热合成法和液相燃烧合成法等，比较了各方法的优缺点和发展前景；归纳了高熵氧化物作为锂离子电极材料、巨介电材料、磁性材料和催化材料等方面的应用；指出了高熵氧化物目前研究存在的问题，讨论了解决措施，展望了高熵氧化物未来的发展趋势。     

泡沫夹克管的防水与保温

针对辽河油田应用泡沫夹克管道的情况，从泡沫夹克管的制作和敷设施工直到设计等环节，结合泡沫夹克管防腐保温的机理，并从理论与实践相结合角度出发，提出导致泡沫夹克管腐蚀损坏的最主要原因是管道保温层漏水，进而提出了在设计和施工过程中提高泡沫夹克管质量的措施。     

深亚微米MOSFET衬底电流的模拟与分析

利用器件模拟手段对深亚微米ＭＯＳＦＥＴ的衬底电流进行了研究和分析，给出了有效的道长度，栅氧厚度，源漏结深，衬底掺杂浓度以及电源电压对深亚微米ＭＯＳＦＥＴ衬底电流的影响，发现电源电压对深亚微米ＭＯＳＦＥＴ的衬底电流有着强烈的影响，热载流子效应随电源电压的降低而迅速减小，当电源电压降低到一定程度时，热载流子效应不再成为影响深亚微米ＭＯＳ电路可靠性的主要问题。