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A lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOST) with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions' lengths. 相似文献
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提出了一种阶梯掺杂P柱区二维类超结LDMOS结构。漂移区采用P/N柱交替掺杂的方式形成纵向类超结。漂移区的P柱采用掺杂浓度从源端到漏端逐渐变低的变掺杂结构。这种变掺杂P柱区的引入对衬底辅助耗尽效应所带来的电荷不平衡问题进行了调制,使得漂移区可以充分耗尽,提高了耐压。P区变掺杂可以提高N区浓度,降低了导通电阻。与常规二维类超结LDMOS结构相比,击穿电压提高了30%,导通电阻下降了10.5%,FOM提升了87.6%,实现了击穿电压与导通电阻的良好折中。 相似文献
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SJ-LDMOST是半导体功率集成技术的核心器件之一,但其击穿电压和比导通电阻之间的优化决定于衬底辅助耗尽效应的消除。这里在分析衬底辅助耗尽效应机理的基础上,将业界消除衬底辅助耗尽效应的主要方法分成两类,并提出通过引入新构造提高漏极纵向击穿电压以彻底消除衬底辅助耗尽效应的途径。 相似文献
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