The serious warpage issues of ultrathin chip-on-flex (UTCOF) assembly induced by mismatched thermal stresses have greatly affected the mechanical stability and reliability of emerging ultrathin chip packaging technology. Currently, a theoretical prediction as a convenient and straightforward approach is still lacked for describing effectively the thermal-mechanical behavior of UTCOF during the adhesive curing and cooling process. In consideration of the adhesive thickness approximating to ultrathin chip and flexible substrate thickness, we develop a layerwise-model of ultrathin chip-adhesive-flex structure under plain strain condition, where the behavior of thick adhesive bonding can be described precisely through increasing the subdivided mathematical plies. Further, the analytical results show that the concave and convex forms of ultrathin chip warpage yield at the end of the curing and cooling process respectively. Meanwhile, the effects of its structure dimensions and material properties are also revealed for discussing a way to relieve the extent of ultrathin chip warpage. Additionally, in order to verify the validity of the theoretical prediction, we also introduce the corresponding numerical technique and experimental method. These results suggest that a kind of rigid and ultrathin flexible substrate such as metal foil should be adopted for small warpage of ultrathin assembly. 相似文献
It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off(LLO) process of ultra-thin(~ 2 μm) polyimide(PI)film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times(AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. 相似文献
Herein, the precipitation of Al3Zr during one- and two-step homogenization processes is studied by the transmission electron microscopy method, and its effect on recrystallization is investigated by the electron backscattering diffraction technique after the same hot compression and solution treatment, respectively. The results show that when the temperature reaches 430 °C, just some small Al3Zr dispersoids are visible in samples that undergo one-step treatment. As the first-step homogenization temperature increases from 365 to 430 °C, Al3Zr radius increases from 9.4 to 19.1 nm while the number density decreases rapidly from 1201 to 183 μm−3. In addition, the average radius of Al3Zr increases to 22.1 nm while the number density decreases to 76 μm−3 when the sample is homogenized at 500 °C/24 h. After a double-step homogenization with decreased first-step temperature, lower recrystallization fraction is obtained. Therefore, the optimal homogenization treatment is determined to be 365 °C/16 h + 500 °C/24 h, after which the most desirable Al3Zr distribution and the smallest recrystallization fraction are obtained during thermomechanical process. This result can provide a more appropriate parameter for homogenization treatment in order to achieve a more dispersed distribution, which will result in stronger pinning force during the thermomechanical process. 相似文献
Science China Technological Sciences - Deterministic assembly techniques that enable programmatic and massively parallel integration of chips are essential for the development of novel electronic... 相似文献
Almost all conventional open-loop particle image velocimetry (PIV) methods employ fixed-interval-time optical imaging technology and the time-consuming cross-correlation-based PIV measurement algorithm to calculate the velocity field. In this study, a novel real-time adaptive particle image velocity (RTA-PIV) method is proposed to accurately measure the instantaneous velocity field of an unsteady flow field. In the proposed closed-loop RTA-PIV method, a new correlation-filter-based PIV measurement algorithm is introduced to calculate the velocity field in real time. Then, a Kalman predictor model is established to predict the velocity of the next time instant and a suitable interval time can be determined. To adaptively adjust the interval time for capturing two particle images, a new high-speed frame-straddling vision system is developed for the proposed RTA-PIV method. To fully analyze the performance of the RTA-PIV method, we conducted a series of numerical experiments on ground-truth image pairs and on real-world image sequences.
The conventional electronic systems enabled by rigid electronic are prone to malfunction under deformation, greatly limiting their application prospects. As an emerging platform for applications in healthcare monitoring and human-machine interface (HMI), flexible electronics have attracted growing attention due to its remarkable advantages, such as stretchability, flexibility, conformability, and wearing comfort. However, to realize the overall electronic systems, rigid components are also required for functions such as signal acquisition and transmission. Therefore, flexible hybrid electronics (FHE), which simultaneously possesses the desirable flexibility and enables the integration of rigid components for functionality, has been emerging as a promising strategy. This paper reviews the enabling integration techniques for FHE, including technologies for two-dimensional/three-dimensional (2D/3D) interconnects, bonding of rigid integrated circuit (IC) chips to soft substrate, stress-isolation structures, and representative applications of FHE. In addition, future challenges and opportunities involved in FHE-based systems are also discussed.