基于系统性能的近地告警技术研究

基于多种导航信息综合处理、告警计算的近地告警系统，对于避免可控撞地事故、 提升飞机安全具有重要意义。本文首先介绍了近地告警系统的工作原理，研究了基于 SOC 曲线的告警包线设计技术，并以过大近地速率告警模式为例进行了告警包线的仿真。最后，利用实际飞行数据分析验证了告警包线合理性以及导航信息可靠性对系统性能的影响。     

Experimental study on the permeability and self-healing capacity of geosynthetic clay liners in heavy metal solutions

Geosynthetic clay liners (GCLs), which have a very low permeability to water and a considerably high self-healing capacity, are widely used in liner systems of landfills. In this study, a series of experimental tests were carried out under complex conditions on typical commercial GCLs from China. In particular, the effects of pH values and lead ions (Pb²⁺) were tested in addition to other factors. The swelling properties of natural bentonite encapsulated between geotextile components in the GCLs were tested first. The swelling capacity was reduced rapidly at pH values < 3 and concentrations of Pb²⁺ >40 mM. Permeability tests on GCLs with different concentrations of lead ions were then performed by using the self-developed multi-link flexible wall permeameter, and data showed that increases in lead ion concentrations greatly improved the permeability. Finally, self-healing capacity tests were conducted on needle-punched GCLs under different levels of damage. Results showed that the GCLs have a good self-healing capacity with small diameter damage holes (2 mm, close to three times the original aperture), but with a damage aperture larger than 15% of the sample area, the self-healing capacity could not prevent leakage; hence, in certain situations it will be necessary to repair the damage to meet the anti-seepage requirement.     

3G与WLAN互连的安全协议和分析

随着无线互联网的发展,第3代移动通信系统(3G)与无线局域网(WLAN)的互连也成为研究的热点。3G系统的优势在于计费管理、漫游与安全性,WLAN系统的优势在于高带宽和低投资成本。通过3G与WLAN的互连可以实现优势互补。论文介绍了3G与WLAN互连的体系和安全结构,综述了互连的安全协议,分析了互连面临的安全挑战,并指出了现有的安全机制所存在的不足,探讨了下一步研究的方向。     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

A novel InP/InGaAs TEBT for ultralow current operations

A novel InP/InGaAs tunneling emitter bipolar transistor (TEBT) is fabricated and demonstrated. The studied device exhibits a very small collector-emitter offset voltage of 40 mV and an extremely wide operation regime. The operation region is larger than 11 decades in magnitude of collector current (10/sup -12/ to 10/sup -1/A). A current gain of 3 is obtained even if the device is operated at an ultralow collector current of 3.9 /spl times/ 10/sup -12/A (1.56 /spl times/ 10/sup -7/A/cm/sup 2/). Furthermore, the common-emitter breakdown voltage of the studied device is higher than 2 V. Consequently, the studied device shows a promise for low supply voltage, and low-power consumption circuit applications.     

椰子油甲酯化法合成烷基醇酰胺

以国产椰子油为原料,在碱性催化剂作用下先甲酯化再缩合制备烷基醇酰胺,通过多次平行实验,确立了最佳反应条件:甲酯化反应的油醇比(mol)为1:5,催化剂氢氧化钾用量为剂油比(w)0.07:1,反应时间1小时;缩合反应的酯胺比(mol)为1:1.15,催化剂氢氧化钾用量为剂酯比(w)0.01:1,反应温度100～110℃,反应压力40～50mmHg,反应时间3.5小时.     

Intermetallic compounds formed at the interface between liquid indium and copper substrates

The interfacial reactions between liquid In and Cu substrates at temperatures ranging from 175°C to 400°C are investigated for the applications in bonding recycled sputtering targets to their backing plates. Experimental results show that a scallop-shaped Cu₁₆In₉ intermetallic compound is found at the Cu/In interface after solder reactions at temperatures above 300°C. A double-layer structure of intermetallic compounds containing scallop-shaped Cu₁₁In₉ and continuous CuIn is observed after the Cu/In interfacial reaction at temperatures below 300°C. The growth of all these intermetallic compounds follows the parabolic law, which implies that the growth is diffusion-controlled. The activation energies for the growth of Cu₁₆In₉, Cu₁₁In₉, and CuIn intermetallic compounds calculated from the Arrhenius plot of growth reaction constants are 59.5, 16.9, and 23.5 kJ/mole, respectively.     

多变量自回归模型在三江平原井灌水稻需水量预测中的应用

应用多变量自回归模型ARV(n), 利用三江平原腹地-富锦市1985～1999年气象资料, 按水稻生育期划分6个生育阶段, 建立了井灌水稻生育期内需水量预测模型. 经模型拟合与预测, 效果良好, 可以为该地区开展节水灌溉、灌溉用水管理、合理开发利用地下水资源, 缓解地下水危机提供参考依据.