Preparation of a Near-Infrared Ray Absorption Film from N-Phenylthiocarbamoyl Chitosan Derivative

We recently observed that the decanoylation of N-phenylthiocarbamoyl chitosan (2) with a mixture of decanoic anhydride and pyridine at 60 °C for 24 h afforded N,N-(decanoyl)phenythiocarbamoyl-/2-isothiocynato chitosan decanoate (3b) rather than the expected product N,N-(decanoyl)phenylthiocarbamoyl chitosan decanoate (3a). This result suggested that some of the N,N-(decanoyl)phenylthiocarmbamoyl groups had been converted to isothiocyanate groups during the decanoylation process. The subsequent reaction of compound 3b with aniline gave N,N-(decanoyl)phenylthiocarbamoyl/N-phenylthiocarbamoyl chitosan decanoate (4) in high yield. A solution of compound 4 in CHCl₃ was then added to a solution of copper decanoate (5) in the same solvent, and the resulting mixture was cast onto a glass plate to give a cast film. The film was annealed at 200 °C in an oven to give a greenish film, which showed good near-infrared absorption characteristic in the range of 800–2200 nm.     

Upflow anaerobic sludge blanket (UASB) treatment of supernatant of cow manure by thermal pre-treatment.

Upflow anaerobic sludge blanket (UASB) methane fermentation treatment of cow manure that was subjected to screw pressing, thermal treatment and subsequent solid-liquid separation was studied. Conducting batch scale tests at temperatures between 140 and 180 degrees C, the optimal temperature for sludge settling and the color suppression was found to be between 160-170 degrees C. UASB treatment was carried out with a supernatant obtained from the thermal treatment at the optimal conditions (170 degrees C for 30 minutes) and polymer-dosed solid-liquid separation. In the UASB treatment with a COD(Cr) loading of 11.7 kg/m3/d and water temperature of 32.2 degrees C, the COD(Cr) level dropped from 16,360 mg/L in raw water to 3,940 mg/L in treated water (COD(Cr), removal rate of 75.9%), and the methane production rate per COD(Cr) was 0.187 Nm3/kg. Using wastewater thermal-treated at the optimal conditions, also a methane fermentation treatment with a continuously stirred tank reactor (CSTR) was conducted (COD(Cr) in raw water: 38,000 mg/L, hydraulic retention time (HRT): 20 days, 35 degrees C). At the COD(Cr) loading of 1.9 kg/m3/d, the methane production rate per COD(Cr), was 0.153 Nm3/kg. This result shows that UASB treatment using thermal pre-treatment provides a COD(Cr), loading of four times or more and a methane production rate of 1.3 times higher than the CSTR treatment.     

High-gain hybrid amplifier consisting of cascaded fluoride-based TDFA and silica-based EDFA in 1458-1540 nm wavelength region

A hybrid optical fibre amplifier is described that consists of a fluoride-based thulium-doped fibre amplifier and a silica-based erbium-doped fibre amplifier connected in a cascade. The amplifier has a gain of more than 25 dB and a noise figure of less than 9 dB over a wide wavelength region of 1458-1540 nm.     

High-resolution long-array thermal ink jet printhead fabricated by anisotropic wet etching and deep Si RIE

This paper describes the fabrication and characterization of a thermal ink jet (TIJ) printhead suitable for high speed and high-quality printing. The printhead has been fabricated by dicing the bonded wafer, which consists of a bubble generating heater plate and a Si channel plate. The Si channel plate consists of an ink chamber and an ink inlet formed by KOH etching, and a nozzle formed by inductively couple plasma reactive ion etching (ICP RIE). The nozzle formed by RIE has squeezed structures, which contribute to high-energy efficiency of drop ejector and, therefore, successful ejection of small ink drop. The nozzle also has a dome-like structure called channel pit, which contributes to high jetting frequency and high-energy efficiency. These two wafers are directly bonded using electrostatic bonding of full-cured polyimide to Si. The adhesive-less bonding provided an ideal shaped small nozzle orifice. Use of the same material (Si substrate) in heater plate and channel plate enables the fabrication of high precision long printhead because no displacement and delamination occur, which are caused by the difference in thermal expansion coefficient between the plates. With these technologies, we have fabricated a 1" long printhead with 832 nozzles having 800 dots per inch (dpi) resolution and a 4 pl. ink drop volume.     

Synthesis and luminescence of Sr2CeO4 fine particles

Fine particles of a blue emission phosphor Sr₂CeO₄ have been synthesized using a chemical co-precipitation technique, and the textual and luminescent properties were compared with the one synthesized by the conventional solid-state reaction method. Particle size and distribution of the Sr₂CeO₄ fine powder prepared by the co-precipitation process were smaller and narrower than those obtained by the samples prepared from the conventional one. The emission intensity of the fine particles was equal to that of the larger particles prepared from the solid-state reaction, on the contrary to the general tendency that emission intensity decrease with particle size reduction. Although no Ce³⁺ peaks were observed in EPR measurements, X-ray photoelectron spectra of the samples clearly elucidated the existence of Ce³⁺ only on the surface of Sr₂CeO₄.     

Driving voltage reduction in a two-phase CCD by suppression ofpotential pockets in inter-electrode gaps

This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used as a horizontal-CCD (H-CCD) in a CCD image sensor requires low-voltage and high-speed operation. Reducing the driving voltage, however, may induce potential pockets in the channel under the inter-electrode gaps which results in a fatal decrease in charge-transfer efficiency. In this case it is necessary to optimize the CCD design to be free of pocket generation. For this requirement, we conducted two-dimensional (2-D) device simulations for the two-phase CCD, whose potential barriers are formed by boron ion-implantation. Our simulations indicated that the edge position of the potential barrier region and the dose of boron-ion implantation would be important parameters for controlling the size of potential pockets. At an optimum edge position and a boron dose, the minimum driving voltage appears to be reducible to 1.1 V. Characteristics of potential pockets and methods of their suppression are also discussed