基于VMD和BSA-KELM的高陡边坡位移预测模型研究

边坡位移的时间序列曲线存在复杂的非线性特性,传统的预测模型精度不足以满足预测要求。为此提出了基于变分模态分解的鸟群优化-核极限学习机的预测模型,并用于河北省某水泥厂的边坡位移预测。该方法首先采用VMD把边坡位移序列分解为一系列的有限带宽的子序列,再对各子序列分别采用相空间重构并用核极限学习机预测,采用鸟群算法优化相空间重构的嵌入维度和KELM中惩罚系数和核参数三个数值,以取得最优预测模型。最后将各个子序列预测值叠加,得到边坡位移的最终预测值。结果表明：和KELM、BSA-KELM、EEMD-BSA-KELM模型相比,基于VMD的BSA-KELM预测精度更高,为边坡位移的预测提供一种有效的方法。     

Inhibition of microbial growth in ready‐to‐eat food stored at ambient temperature by modified atmosphere packaging

This study was undertaken to develop a modified atmosphere package to control microbial growth in ready‐to‐eat (RTE) products stored at ambient temperature. Ethanol and/or limonene associated with modified atmosphere (CO₂ : O₂ : N₂ = 30% : 5% : 65%) was used to inhibit the growth of total air‐borne microorganisms and Escherichia coli in RTE products stored at 25°C. The results indicated that 0.05% ethanol vapour in the headspace was effective to inhibit the growth of air‐borne microorganisms and E. coli at 25°C for 72 h in a model study, and the effectiveness was related to ethanol content. Both 73 ppm limonene and 0.05% ethanol vapour enhanced the bacteriostatic effect of modified atmosphere in RTE sushi roll products, and no off‐flavour was detected using this formulated gas; however, no significant inhibitory effect was observed for RTE cold noodle products. This study concludes that combinations of carbon dioxide, ethanol or limonene vapours are effective to inhibit microbial growth in RTE food at ambient temperature, and the outcome may be due to the hurdle effect. Copyright © 2003 John Wiley & Sons, Ltd.     

B2O3/TiO2-ZrO2催化剂上环己酮肟的气相Beckmann重排反应

用共沉淀法制备了TiO2-ZrO2复合氧化物载体，BET，DTA，XRD表征结果表明，该复合载体具有较大的比表面和较好的热稳定性，对于环己酮肟气相Beckmann重排反应制己内酰胺，用复合载体制备的B2O3／TiO2-ZrO2催化剂，比分别以TiO2,ZrO2为载体所制备的B2O3/TiO2和B2O3／ZrO2催化剂具有更高的活性和选择性，实验表明，催化剂表面中等强度的酸位是环己酮肟气相Beckmann重排反应的有效活性中心。     

Effect of pulse parameters on microstructure of joint in laser beam welding for SiC_p/6063 composite

1　INTRODUCTIONSiC particlesreinforcedcomposites ,thankstotheirlowcostsandhighlevelofstructuralproperties ,areshowingtheirpotentialincivilandmilitaryappli cation .SiC particlesreinforcedaluminummatrixcomposites wideapplicationinaerospaceandautomo tiveareattributedtotheirperformanceofhighspecif icstrength ,highspecificstiffness ,highelasticmodu lusandexcellentwearresistance .Thecoefficientofthermalexpansionandthermalconductivitycanberegulatedbychangingthecontentandsizeofrein forcingparticl…     

糠醛加氢制糠醇中γ-Al2O3负载Cu-Zn催化剂的改性研究

采用浸渍法制备Co改性γ-Al₂O₃负载的Cu-Zn催化剂，考察Cu-Zn负载量、Co含量及反应温度等对催化剂性能的影响。结果表明，在413 K、氢气流速0.5 mL·s^－1 和糠醛空速2 h^-1 条件下,当催化剂Cu-Zn/γ-Al₂O₃（Co）中n(Cu)∶n(Zn)∶n(Al)∶n(Co)＝1.0∶2.0∶3.0∶0.51时，糠醇的选择性100％，糠醛转化率94.6％，比使用单纯Cu-Zn/γ-Al₂O₃催化剂的最佳转化率提高11％。     

糠醛加氢制糠醇中Cu-Zn/γ-Al2O3催化剂的改性研究

采用浸渍法制备γ-Al2O3负载Cu-Zn催化剂并用Co改性.考察了Cu-Zn负载量、Co用量、反应温度和质量空速对催化剂性能的影响,对催化剂进行100 h的稳定性评价实验,并采用X射线衍射仪(XRD)对催化剂进行表征.实验结果表明,当Cu,Zn,Al和Co的摩尔比为1.00 :2.00:3.00:0.51时,Cu-Zn/γ-Al2O3(Co)的催化性能和稳定性比较好.在413 K,氢气流速为0.5 mL/s,糠醛空速为2 h-1条件下,糠醇的选择性达100%,糠醛转化率达94.6%,比使用单纯Cu-Zn/γ-Al2O3催化剂的转化率提高11%.催化剂中Cu晶相是催化活性中心,Co的加入抑制了Cu的氧化,提高了催化剂的活性和稳定性.     

基于椭圆曲线的有代理的多重签名*

在研究有代理的多重签名和椭圆曲线数字签名的基础上,提出了一种基于椭圆曲线的有代理的多重签名方案。其安全性基于求椭圆曲线离散对数的困难,比起已有的方案更加安全、高效,并给出了两种基于椭圆曲线的有代理的多重签名方案,即广播的有代理的多重签名方案和有序的有代理的多重签名方案;最后讨论了其正确性和安全性。     

Mn~(2+)掺杂对纳米TiO_2薄膜光催化活性的影响

采用溶胶-凝胶法制备Mn2+掺杂的TiO2薄膜光催化剂,进行甲醛的光催化实验,考察Mn2+掺杂量、薄膜焙烧温度、溶胶体系pH值及薄膜厚度对光催化性能的影响.结果表明,Mn2+掺杂量为1.0%,焙烧温度500℃1 h,加硝酸溶胶体系pH=4,镀膜5层时,Mn2+掺杂TiO2薄膜光催化活性最高.150 min后甲醛降解率达79%,是单纯TiO2薄膜的1.4倍.     

Boundary effects on the optical properties of InGaN multiple quantum wells

We examine the issues of spontaneous and piezoelectric polarization discontinuity on the optical properties of 3.0-nm-thick indium gallium nitride (InGaN) multiple quantum wells (MQWs). A quench of band-edge emission from the cap GaN layer is observed when the photoexcitation source is changed from a 355- to a 248-nm laser. The interband transitions from the InGaN wells exhibit a linear dependence on the 1) spectral blue shift of /spl sim/8.5/spl times/10/sup -18/ meV /spl middot/ cm/sup 3/ and 2) change of the internal field of /spl sim/3/spl times/10/sup -14/ meV /spl middot/ cm/sup 2/ with the injected carrier density up to N/sub inj//spl sim/10/sup 19/ cm/sup -3/ at 77 K. These observations are attributed to the redistribution of photogenerated carriers in the InGaN wells due to the polarization discontinuity at the QW interface and the surface band bending effect. By incorporating an additional boundary condition of surface Fermi-level pinning into the Poisson equation and the band-structure analysis, it is shown the emission from the InGaN-GaN MQWs is dominant by the recombination between the high-lying subbands and the screening of internal field effects.