DEPTH PROFILING OF ~1H AND/OR ~4He IN SOLIDS BY ERD WITH ~(19)F IONS

1H or 4He depth profiling in 1H or 4He implanted silicon samples was performed by elastic recoil detection (ERD) with multicharged 19F ions at a small accelerator. Optimization of the experimental parameters such as incident ions energy and scattering geometry were calculated by computer simulation. Depth resolution of about 20-30nm at depth of 400nm for 1H and at depth of 300nm for 4He can be obtained, respectively.     

FMGV-1型快速电磁阀

本文描述的快速电磁阀,采用了背压和橡皮弹力关闭阀门,储能电容器通过紧靠可动阀体圆盘的驱动线圈临界阻尼放电打开阀门。阀门启动时间为100～200μs,打开时间为200～800μs。进气量可在大范围内连续可调。当背压和气库气压分别为P_b=P_N=1×10~5Pa时,实验重复五十次,进气量的均方误差不大于3%。     

等离子体物理实验装置(GBH-1)中95瓷真空放电室用粘结剂选择和粘结工艺

等离子体物理实验研究用的GBH-1装置是一个高比压快速磁压缩装置。此装置的核心部件之一的真空放电室是一种用非金属材料——95氧化铝陶瓷制成的。由于该真空放电室是大尺寸、厚壁、拉长截面的环,整体制造是困难的,只能烧制成多节的内环和外环,再用特制的粘结剂粘结而成。本文主要介绍如何选择粘结剂和粘结工艺以及真空放电室残余气体质谱分析的结果。     

Si中注Pb的红外瞬态退火

用背散射-沟道效应研究了Si中注Pb并进行红外瞬态退火的辐照损伤及杂质分布.注入能量为350KeV,剂量为1×10~(17)及5×10~(15)/cm~2.实验表明高杂质浓度区中的杂质沉淀和晶格应力能抑制晶体的外延生长.当外延生长停止后,表面形成多晶结构,杂质沿晶粒边界向表面扩散.     

Si中注入Zn的辐射损伤

用高分辨的背散射-沟道效应测量了180及 350keV Zn注入 Si中的辐射损伤.注入剂量在1× 10~(15)-1× 10~(17)/cm~2范围内.实验表明,非晶层和单晶的界面深度 x_(A-C)随剂量(?)及注入能量E的增加而单调地增加.这些参数之间的变化关系符合直接碰撞导致非晶化模型,即每一个注入离子由于级联碰撞使表面局部的小区域非晶化.随着剂量的增加,这些非晶态的小区相互重叠而形成一无定形层.     

用C离子的弹性反冲法测固体中氢分布

文章介绍了用1.7MV小串列加速器提供的4—7MeV多电荷C离子,采用弹性反冲法(ERD)分析了α-Si:H中氢元素的深度分布。计算表明,近表面处的深度分辨率为15-30nm,可探测深度100—700nm。探讨了入射能量和散射几何条件的优化问题。比较了几种分析方法的测量结果。     

CALCULATION AND OPTIMIZATION OF EXPERIMENTAL PARAMETERS IN ELASTIC RECOIL DETECTION (ERD)

Elastic recoil detection (ERD) proposed for the analysis of light elements in a heavier matrix is an appropriate method for its specialities. Optimization of experimental parameters in ERD such as scattering geometry and incident beam energy is very important when using a small accelerator with energy lower than 10 MeV. In this paper a computer program ERDAl is developed for the purpose, and is proved to be useful for practical handling of ERD experiments.