十六氯酞菁锌有机半导体材料的合成及其气敏性研究

Due to the difficulty in synthesizing perhalogenated metallophthalocyanine, the method of ammonium molybdate solid phase catalysis was introduced, and by using tetrachlorophthalic anhydride and urea as the raw materials, hexadecachloro zinc phthalocyanine （ZnPcCl16） was synthesized. Components of the composite were analyzed by energy spectrum, and its functional group structures and absorption peaks were characterized by IR and UV-vis spectroscopy. The thin films of gas sensors were prepared in a vacuum evaporation system and evaporated onto SiO2 substrates, where sensing electrodes were made by MEMS micromachining. The optimal conditions for the films are： substrate temperature of 150 ℃ evaporation current of 95 A and film thickness of 50 nm. The result showed that the sensors were ideally sensitive to Cl2 gas and could detect the minimum concentration of 0.3 ppm.     

基于MEMS叠层微结构SO2毒气传感器的研究

针对新型有机半导体电导率偏低的技术难点,提出了一种多孔上电极的叠层微结构,以真空镀膜技术形成气敏膜,采用MEMS微加工制成气体传感器。依据等效电路和工艺边界条件,通过电导公式推导出传感器的输出电导可提高103倍,解决了有机半导体的信号采集问题。通过SEM微观形貌,确认蒸发电流100~120A、蒸发时间8~12s的电极成膜最佳条件;气敏膜表面呈现二次化学反应融合的200nm左右“米粒状” 活性颗粒状态,均匀一致,孔隙有序。测试结果表明：对SO2最佳灵敏度时,比例系数为0.15~0.35硫酸掺杂CuPcxPANI1-x,考虑到减少H2S气体干扰,选择CuPc0.35PANI0.65;加热电压VH为1~2.5V会提高灵敏度特性和响应恢复特性,响应时间30 s;传感器输出特性为单对数线性关系,可实现0~200×10-6之间检测范围;6个月的稳定性考核,输出阻抗漂移≤±5%,灵敏度漂移≤10%。     

In-Nb复合半导体氧化物Cl2敏感特性的研究

以检测Cl2为目标,采用恒温化学共沉积法合成了In-Nb复合半导体氧化物,并研究了其气体传感器的制作方法,分析了In-Nb气敏材料的微观特性和敏感特性,探讨了气敏机理。实验证明,In-Nb材料具有良好的Cl2敏感特性。     

全氯取代酞菁锌的合成及其Cl2气敏性研究

本文以四氯邻苯二腈和尿素为原料,采用钼酸铵固相催化法合成了全氯取代氯酞菁锌,并通过红外、紫外光谱对其进行了表征。在SiO2基片上,利用MEMS微加工技术制造了敏感电极,采用蒸发镀膜工艺制作了气体传感器薄膜。气敏测试结果表明：该传感器对氯气有较理想的灵敏特性。     

基于MEMS叠层微结构的SO2毒气传感器

利用多孔上电极叠层微结构,以真空镀膜技术形成气敏膜,采用MEMS微加工技术研制了气体传感器.依据等效电路和工艺边界条件,通过电导公式推导出传感器的输出电导提高了103倍,解决了有机半导体的信号采集问题.通过SEM微观形貌,确认蒸发电流100～120 A、蒸发时间8～12 s为电极成膜最佳条件;气敏膜表面呈现二次化学反应融合的200 nm左右"米粒状" 活性颗粒状态,均匀一致,孔隙有序.测试结果表明:比例系数为0.15～0.35的硫酸掺杂CuPcxPANI 1-x对SO2有最佳的灵敏度;考虑到减少H2S气体干扰,选择CuPc0.35PANI0.65为气敏材料,在加热电压VH为1～2.5 V时提高了传感器的灵敏度特性和响应恢复特性,响应时间为30 s;传感器输出特性为单对数线性关系,检测范围为0～200×10-6;经6个月的稳定性考核,其输出阻抗漂移≤±5%,灵敏度漂移≤10%.     

In基复合半导体氧化物Cl2敏感特性的研究

Aiming at detecting Cl2 gas, this study was made on how to make In-based compound semiconductor oxide gas sensor. The micro-property and sensitivity of In-based gas sensing material were analyzed and its gas sensitive mechanism was also discussed. Adopting constant temperature chemical coprecipitation, the compound oxides such as In-Nb, In-Cd and In-Mg were synthesized, respectively. The products were sintered at 600 ℃ and characterized by the Scanning Electron Microscope （SEM）, showing the grain size almost about 50-60 nm. The test results show that the sensitivities of In-Nb, In-Cd and In-Mg materials under the concentration of 50 × 10^-6 in Cl2 gas are above 100 times, 4 times and 10 times, respectively. The response time of In-Nb, In-Cd and In-Mg materials is about 30, 60 and 30 s, and the recovery time less than 2, 10 and 2 min, respectively. Among them, the In-Nb material was found to have a relatively high conductivity and ideal sensitivity to Cl2 gas, which showed rather good selectivity and stability, and could detect the minimum concentration of 0.5 × 10^-6 with the sensitivity of 2.2, and the upper limit concentration of 500 × 10^-6. The power loss of the device is around 220 mW under the heating voltage of 3 V.     

Chlorine gas sensors using hybrid organic semiconductors of PANI/ZnPcCl16

PANI/ZnPcCl_(16)(polyaniline doped with sulfosalicylic acid/hexadecachloro zinc phthalocyanine) powders were vacuum co-deposited onto Si substrates,where Pt interdigitated electrodes were made by micromachining.The PANI/ZnPcCl_(16) films were characterized and analyzed by SEM,and the influencing factors on its intrinsic performance were analyzed and sensitivities of the sensors were investigated by exposure to chlorine(Cl_2) gas.The results showed that powders prepared with a stoichiometric ratio of(ZnPc...     

聚苯胺/十六氯酞菁锌杂化有机半导体氯气传感器的研究

本文采用微加工技术在硅片上制作了铂金叉指电极,通过真空共蒸发沉积制备了聚苯胺/十六氯酞菁锌气敏薄膜,借助SEM对沉积膜进行了表征分析,并分析了氯气作用下影响该薄膜自身性能的相关因素,同时也对该传感器进行了气敏性能测试。实验结果表明：当聚苯胺与十六氯酞菁锌化学计量比为2：3时,薄膜对氯气有很好的敏感特性;最佳的蒸发沉积条件为基片温度160 ℃、蒸发温度425 ℃、薄膜厚度75 nm;提高工作温度(100 ℃以上)或增加气体浓度(100 ppm以上),均可以提高响应特性,但二者都将存在一个上限值。最后,我们也对该气敏薄膜的敏感机理进行了讨论。