Whole body vibration exposures in forklift operators: comparison of a mechanical and air suspension seat

Using a repeated measures design, this study compared differences in whole body vibration (WBV) exposures when 12 forklift operators drove the same forklift with a mechanical suspension and an air suspension seat. A portable PDA-based WBV data acquisition system collected and analysed time-weighted and raw WBV data per ISO 2631-1 and 2631-5 WBV measurement standards. Tri-axial measurements of weighted vibration (A(w)), crest factor, vibration dose values, time-weighted average-peak, raw (+) peak, raw (-) peak and static compression dose (S(ed)) were compared between seats. There were significant differences in z-axis WBV exposures with the air suspension seat, yielding lower WBV exposures. In addition, there were differences between seats in how they attenuated WBV exposures based on the driver's weight. In the mechanical suspension seat, WBV exposures were weight-dependent, with lighter drivers having higher WBV exposures, whereas with the air suspension seat, the same trends were not as prevalent. STATEMENT OF RELEVANCE: This study contributes to the understanding of how different seat suspensions can influence WBV transmission and how some components of vibration transmission are dependent on the weight of the driver. Additional systematic studies are needed to quantify how various factors can influence WBV exposures.     

Implanted high value resistors

High value resistors are desirable in integrated circuits and they can be made by ion implantation. The linearity of conventional boron implanted resistors is not, however, always satisfactory.

Methods for improving the voltage linearity of ion-implanted, integrated circuit resistors are described in this paper. In particular the use of a damaging implant was investigated in detail. Hall effect measurements as a function of temperature have shown that a deep acceptor was produced by the damage. The improved linearity observed in such layers was mainly due to the presence of this deep level, rather than to reduction of mobility. A simple theory was developed that reproduced resistor behaviour satisfactorily.

It was confirmed that the use of a known deep acceptor, such as indium, also led to improved linearity.     

Structural interaction of natural and synthetic inhibitors with the venom metalloproteinase, atrolysin C (form d)

The structure of the metalloproteinase and hemorrhagic toxin atrolysin C form d (EC 3.4.24.42), from the venom of the western diamondback rattlesnake Crotalus atrox, has been determined to atomic resolution by x-ray crystallographic methods. This study illuminates the nature of inhibitor binding with natural (< Glu-Asn-Trp, where < Glu is pyroglutamic acid) and synthetic (SCH 47890) ligands. The primary specificity pocket is exceptionally deep; the nature of inhibitor and productive substrate binding is discussed. Insights gained from the study of these complexes facilitate the design of potential drugs to treat diseases where matrix metalloproteinases have been implicated, e.g., arthritis and tumor metastasis.     

Morphology and histochemistry of the mandibular gland of the Australian brush-tail possum Trichosurus vulpecula (Marsupialia)

A histological, ultrastructural and histochemical study of the mandibular gland of the Australian possum Trichosurus vulpecula revealed essentially similar features as those described earlier for the mandibular gland of the taxonomically relatively unrelated American opossum Didelphis. The secretory endpieces consist of a branched tubular part, composed of serous cells whose secretion granules contain neutral glycoproteins, and terminal acini, consisting of seromucous cells containing small amounts of sialomucins. Relatively short intercalated ducts lead to striated ducts of variable ultrastructural appearance. The striated ducts run in bundles in the center of each sublobule of the gland. The possible functional significance of the abundance and variability in ultrastructure of the striated ducts is discussed.     

Work values and job satisfaction.

114 student airmen and 306 noncommissioned officers completed measures of job satisfaction and work values. Consistent relationships appeared between these 2 sets of variables. Evidence indicates that the job satisfaction variance controlled by work values is independent of that controlled by other variables. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Threshold current of 670-nm AlGaInP strained quantum well lasers

By means of gain-current calculations we have examined the factors which determine the threshold current of compressively strained Ga_x In_1-xP/AlGaInP quantum well lasers for the various well width/composition (x) combinations which give a transition wavelength of 670 nm. In addition to valence band modifications we find that the increasing depth and decreasing width of the well are important in decreasing the current as the strain increases. We reveal the important role of well width fluctuations in devices with high compressive strain     

Localized Auger Recombination in Quantum-Dot Lasers

We have calculated radiative and Auger recombination rates due to localized recombination in individual dots, for an ensemble of 10⁶ dots with carriers occupying the inhomogeneous distribution of energy states according to global Fermi-Dirac statistics. The recombination rates cannot be represented by simple power laws, though the Auger rate has a stronger dependence on the ensemble electron population than radiative recombination. Using single-dot recombination probabilities which are independent of temperature, the ensemble recombination rates and modal gain decrease with increasing temperature at fixed population. The net effect is that the threshold current density increases with increasing temperature due to the increase in threshold carrier density. The most significant consequence of these effects is that the temperature dependence of the Auger recombination rate at threshold is much weaker than in quantum wells, being characterized by a T₀ value of about 325 K. Observations of a strong temperature dependence of threshold in quantum dot lasers may have explanations other than Auger recombination, such as recombination from higher lying states, or carrier leakage.     

Minority carrier effects in GaInP laser diodes

Using a top-contact window, we have observed emission from a direct-gap monitor layer placed at the interface between the p-cladding and contact layers of an AlGaInP laser diode when driven under forward bias, thereby providing direct evidence for minority carrier (electron) leakage in these devices. We have further shown that the leakage is due to both drift and diffusion and, using pulsed optical excitation of a device under bias, we have determined a value of 170±10 cm² V^-1 s^-1 for the mobility of minority carriers in the p-type cladding layer by a time-of-flight experiment. The data was analyzed using a simulation which takes account of the influence of recombination times in the well and monitor layer on the overall time response of the structure. The measured mobility corresponds to electron transport through the X-conduction band. We show that the drift component of the leakage current reduces the differential efficiency and is responsible for the decrease in external differential efficiency with increasing temperature. Because the leakage occurs by a mixture of drift and diffusion, the transit time does not decrease significantly with increasing drive current; however the impact of leakage on the modulation response is predicted to be very small unless the leakage becomes a substantial fraction of the total current