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We propose wedge type light guide plate (LGP) adopting twin inclined cylindrical surfaces (TICS) at the incident part of a LGP. It has higher optical efficiency than conventional wedge type LGP. In dimension of LGP which the thickness of incident part is 1.5 mm and that of luminance part is 0.7 mm, the optical efficiency of wedge type LGP adopting TICS is expected to be 96% in comparison with a normal flat LGP. In addition, there is an advantage to reduce the non‐uniformity of vicinity of light emitted diodes (LEDs) by TICS reflecting light laterally. However, it is necessary that the LED centers are aligned with the intersections of TICS. The misalignment of LED causes non‐uniformity of optical profile that is slightly larger than a normal LGP.  相似文献   
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The dependence of the threshold current density on the number of wells for 1.3-/spl mu/m-range edge emitting lasers using GaInNAsSb novel material, at which the incorporation of the small amount of Sb make the two-dimensional growth condition wide, is studied. The lowest record ever reported for the threshold current density per well (Jth A/cm/sup 2//well@L=900 /spl mu/m) for 3 QWs lasers was achieved. GaInNAs-based 5 QWs lasers with the very low threshold current density per well of 160 A/cm/sup 2/ were successfully grown for the first time. Therefore, no significant deterioration of Jth is observed even though the number of wells increased up to 5. Since Jth of 5 QWs doesn't increased rapidly compared to SQW and 3 QWs as decreasing the cavity length, it is considered that lower Jth can be obtained by utilizing 5 QWs in devices such VCSELs which use short cavity length.  相似文献   
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Growth rate has a direct impact on the productivity of nitride LED production.Atmospheric pressure growth of GaN with a growth rate as high as 10μm/h and also Al0.1Ga0.9N growth of 1μm/h by using 4 inch by 11 production scale MOVPE are described.XRD of(002) and(102) direction was 200 arcsec and 250 arcsec, respectively.Impact of the growth rate on productivity is discussed.  相似文献   
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TiNi alloy samples implanted with various fluences of 3 MeV Cu2+ ions were characterized by transmission electron microscope (TEM) and X-ray diffractometer. Cross-sectional TEM images of the samples showed that amorphous region was seen at the fluence of 1014 ions cm?2 in case of ion implantation at 300 K of the substrate temperature, but in case of ion implantation at 100 K it did not appear even at 1015 ions cm?2. These results were also confirmed by X-ray diffraction profiles of the same samples. Consequently, the extent of microstructure change of TiNi alloy by ion implantation was different depending on the substrate temperature.  相似文献   
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In order to clarify the cell kinetics of colorectal villous tumors (VT), 21 villous adenomatous areas and 12 carcinomatous areas within villous adenomas were investigated for proliferative activity and apoptosis and compared with a series of 41 tubular tumors (TT), demonstrating elements of intramucosal carcinomas as well as tubular adenomas (so-called carcinoma in tubular adenoma). Proliferation was estimated in terms of Ki-67 labeling indices and mitotic indices, and apoptosis was assessed by DNA nick-end labeling to give apoptotic indices. Apoptotic indices of villous adenomatous and carcinomatous regions were significantly lower than the values for their tubular counterparts. Ki-67 labeling indices were also significantly lower for adenoma components. Apoptotic indices, Ki-67 labeling indices and mitotic indices increased with atypia raised in tubular adenoma components. Correlations of mitotic indices with apoptotic indices, Ki-67 labeling indices with apoptotic indices and mitotic indices with Ki-67 labeling indices were found for each villous tumor group and tubular tumor group, and the apoptosis and proliferation ratios for villous tumors were relatively low, suggesting a tendency for greater growth due to less cell deletion. Although this is only one of the biological features of villous tumor groups, it might play a major role in generation of malignancy.  相似文献   
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Ru-loaded Y2O3 catalyst was investigated for the partial oxidation of methane to synthesis gas. Ru(0.5 wt%)/Y2O3 catalyst afforded a high CH4 conversion of 27% at a CH4:O2 ratio of 5 to give nearly a 1:2 ratio of CO and H2 with a selectivity of 75% at 873 K. Ru(0.5 wt%)/Y2O3 catalyst maintained high catalytic activity over 10 h in the partial oxidation of methane. Carbon deposition of the catalyst surface in the reaction of CH4 was examined by thermogravimetric analyses, and it was found that no carbon deposition occurred on the Ru(0.5 wt%)/Y2O3 catalyst. The synthesis-gas production proceeded basically via a two-step reaction consisting of methane combustion to give H2O and CO2, followed by the reforming of methane from CO2 and steam.  相似文献   
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