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排序方式: 共有189条查询结果,搜索用时 78 毫秒
1.
Olga Filippova Yu Xiao Michael Rehm Jason Ingham 《Building Research & Information》2018,46(7):711-724
The marked increase in the awareness of earthquake risk following the Canterbury earthquakes in New Zealand offered a unique opportunity to investigate the economic effect of disaster-mitigation regulations on the commercial building stock. A difference-in-differences (DD) framework was used to determine whether earthquake risk has been capitalized into the property prices of buildings constructed prior to 1976, as a response to the national policy requiring assessment and strengthening (or demolition) of the existing earthquake-prone building stock. A negative externality is found in the policy announcement on affected (pre-1970s) office and retail buildings which caused office buildings to suffer a 12.5% stigma discount. However, retail properties were less impacted suffering a 2.3% stigma loss. The value of the commercial building stock has been affected by the policy. These findings provide policy-makers with timely evidence as to the economic effects of New Zealand’s earthquake-prone buildings policy. Facing losses in property value and financial responsibility for retrofitting their assets, building owners will be looking for a workable set of regulatory and non-regulatory incentives to encourage disaster risk management and protect the built environment. 相似文献
2.
Anita Rehm 《室内设计与装修》2002,(7)
对于现代室内建筑来说,楼梯已是一种既具有功能,又可使居室生辉的产品.以建筑师与业主的要求为基础,造型与设计多姿多彩.螺旋楼梯是为了节约空间而设计的.过去的楼梯一般单独位于入口的前厅,占地面积大、造价高.现在的楼梯早已被融为居室的一部分,据楼梯制造者说,这也是木质楼梯长久不衰的原因所在. 相似文献
3.
Dual-Color InAs/GaSb Superlattice Focal-Plane Array Technology 总被引:1,自引:0,他引:1
Robert Rehm Martin Walther Frank Rutz Johannes Schmitz Andreas Wörl Jan-Michael Masur Ralf Scheibner Joachim Wendler Johann Ziegler 《Journal of Electronic Materials》2011,40(8):1738-1743
Within a very few years, InAs/GaSb superlattice technology has proven its suitability for high-performance infrared imaging
detector arrays. At the Fraunhofer Institute for Applied Solid State Physics (IAF) and AIM Infrarot-Module GmbH, efforts have
been focused on developing mature fabrication technology for dual-color InAs/GaSb superlattice focal-plane arrays for simultaneous,
colocated detection at 3 μm to 4 μm and 4 μm to 5 μm in the mid-wavelength infrared atmospheric transmission window. Integrated into a wide-field-of-view missile approach warning
system for an airborne platform, a very low number of pixel outages and cluster defects is mandatory for bispectral detector
arrays. Process refinements, intense root-cause analysis, and specific test methodologies employed at various stages during
the process have proven to be the key for yield enhancements. 相似文献
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Rehm R. Walther M. Schmitz J. Fleissner J. Ziegler J. Cabanski W. Breiter R. 《Electronics letters》2006,42(10):577-578
Based on type-II InAs/GaSb superlattice photodiodes, the first report of a dual-colour infrared camera with excellent NETD values<30 mK for the shortwave channel with a cutoff wavelength of 4.0 /spl mu/m and <17 mK for the longwave channel with 5.0 /spl mu/m cutoff is presented. The bispectral system, which offers a simultaneous and pixel-registered detection of both colours, allows remote imaging of carbon dioxide. 相似文献
8.
M. Walther R. Rehm F. Fuchs J. Schmitz J. Fleißner W. Cabanski D. Eich M. Finck W. Rode J. Wendler R. Wollrab J. Ziegler 《Journal of Electronic Materials》2005,34(6):722-725
An infrared camera based on a 256×256 focal plane array (FPA) for the second atmospheric window (3–5 μm) has been realized
for the first time with InAs/GaSb short period superlattices (SLs). The SL detector structure with a broken gap type-II band
alignment was grown by molecular beam epitaxy on GaSb substrates. Effective bandgap and strain in the superlattice were adjusted
by varying the thickness of the InAs and GaSb layers and the controlled formation of InSb-like bonds at the interfaces. The
FPAs were processed in a full wafer process using optical lithography, chemical-assisted ion beam etching, and conventional
metallization technology. The FPAs were flip-chip bonded using indium solder bumps with a read-out integrated circuit and
mounted into an integrated detector cooler assembly. The FPAs with a cut-off wavelength of 5.4 μm exhibit quantum efficiencies
of 30% and detectivity values exceeding 1013 Jones at T=77 K. A noise equivalent temperature difference (NETD) of 11.1 mK was measured for an integration time of 5 ms
using f/2 optics. The NETD scales inversely proportional to the square root of the integration time between 5 ms and 1 ms,
revealing background limited performance. Excellent thermal images with low NETD values and a very good modulation transfer
function demonstrate the high potential of this material system for the fabrication of future thermal imaging systems. 相似文献
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