Electrophoretic mobility of magnetite particles in high temperature water

Magnetite (Fe₃O₄) is one of the most common oxides forming deposits and particulate phases in industrial high temperature water circuits. Its colloidal characteristics play a principal role in the mechanism of deposit formation and can be used as controlling factors to prevent or minimize deposit formation and damage of industrial pipelines due to under-deposit corrosion. In this study, a high temperature particle electrophoresis technique was employed to measure the zeta potential at the magnetite/water interface—the parameter that controls colloidal stability of particles, their aggregation, and deposition. The measurements were made at temperatures up to 200 °C over a wide range of pH. The isoelectric points of magnetite, at which the deposition of particles is increased, were determined at pH 6.35, 6.00, 5.25, and 5.05 for temperatures 25, 100, 150, and 200 °C, respectively. The observed temperature dependence of zeta potential and the isoelectric pH point of magnetite can help to explain the extent of interactions between the colloidal particles and the steel wall surfaces under hydrothermal conditions, and indicate methods for controlling and mitigating oxide deposition in high temperature water cycles.     

A low-voltage folded-switching mixer in 0.18-/spl mu/m CMOS

Scaling of CMOS technologies has a great impact on analog design. The most severe consequence is the reduction of the voltage supply. In this paper, a low voltage, low power, AC-coupled folded-switching mixer with current-reuse is presented. The main advantages of the introduced mixer topology are: high voltage gain, moderate noise figure, moderate linearity, and operation at low supply voltages. Insight into the mixer operation is given by analyzing voltage gain, noise figure (NF), linearity (IIP3), and DC stability. The mixer is designed and implemented in 0.18-/spl mu/m CMOS technology with metal-insulator-metal (MIM) capacitors as an option. The active chip area is 160 /spl mu/m/spl times/200 /spl mu/m. At 2.4 GHz a single side band (SSB) noise figure of 13.9 dB, a voltage gain of 11.9 dB and an IIP3 of -3 dBm are measured at a supply voltage of 1 V and with a power consumption of only 3.2 mW. At a supply voltage of 1.8 V, an SSB noise figure of 12.9 dB, a voltage gain of 16 dB and an IIP3 of 1 dBm are measured at a power consumption of 8.1 mW.     

Receiver Front-End Circuits for Future Generations of Wireless Communications

In this paper, new receiver concepts and CMOS circuits for future wireless communications applications are introduced. The concepts derived are applied to a few classes of wireless communications standards that are broad-band at radio frequencies and/or require a broad-band baseband circuitry. Multimode multiband operation and adaptivity as key requirements for future generation receivers are highlighted throughout the paper. The tradeoffs between power consumption, noise figure and linearity performance of low-noise amplifiers, mixers, and intermediate frequency filters are considered too.