Adaptive path finding algorithm in dynamic environment for warehouse robot

Neural Computing and Applications - Warehouse robots have been widely used by manufacturers and online retailer to automate good delivery process. One of the fundamental components when designing a...     

Thermal Stability Study of Cu(MoN<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>) Seed Layer on Barrierless Si

This study reports the good thermal stability of a sputtered Cu(MoN _x ) seed layer on a barrierless Si substrate. A Cu film with a small amount of MoN _x was deposited by reactive co-sputtering of Cu and Mo in an Ar/N₂ gas mixture. After annealing at 560°C for 1 h, no copper silicide formation was observed at the interface of Cu and Si. Leakage current and resistivity evaluations reveal the good thermal reliability of Cu with a dilute amount of MoN _x at temperatures up to 560°C, suggesting its potential application in advanced barrierless metallization. The thermal performance of Cu(MoN _x ) as a seed layer was evaluated when pure Cu is deposited on top. X-ray diffraction, focused ion beam microscopy, and transmission electron microscopy results confirm the presence of an ∼10-nm-thick reaction layer formed at the seed layer/Si interface after annealing at 630°C for 1 h. Although the exact composition and structure of this reaction layer could not be unambiguously identified due to trace amounts of Mo and N, this reaction layer protects Cu from a detrimental reaction with Si. The Cu(MoN _x ) seed layer is thus considered to act as a diffusion buffer with stability up to 630°C for the barrierless Si scheme. An electrical resistivity of 2.5 μΩ cm was obtained for the Cu/Cu(MoN _x ) scheme after annealing at 630°C.     

Impact of Coronavirus Pandemic Crisis on Technologies and Cloud Computing Applications

In light of the coronavirus disease 2019 (COVID-19) outbreak caused by the novel coronavirus, companies and institutions have instructed their employees to work from home as a precautionary measure to reduce the risk of contagion. Employees, however, have been exposed to different security risks because of working from home. Moreover, the rapid global spread of COVID-19 has increased the volume of data generated from various sources. Working from home depends mainly on cloud computing (CC) applications that help employees to efficiently accomplish their tasks. The cloud computing environment (CCE) is an unsung hero in the COVID-19 pandemic crisis. It consists of the fast-paced practices for services that reflect the trend of rapidly deployable applications for maintaining data. Despite the increase in the use of CC applications, there is an ongoing research challenge in the domains of CCE concerning data, guaranteeing security, and the availability of CC applications. This paper, to the best of our knowledge, is the first paper that thoroughly explains the impact of the COVID-19 pandemic on CCE. Additionally, this paper also highlights the security risks of working from home during the COVID-19 pandemic.     

Copper-Silver Alloy for Advanced Barrierless Metallization

In this study we observed significantly improved properties, over a pure copper (Cu) film, for a copper-silver alloy film made with a pure copper film co-sputtered with a minute amount of either Ag_0.3N_0.4 or Ag_1.2N_0.7 on a barrierless Si substrate. In either case, no noticeable interaction between the film␣and the Si substrate was found after annealing at 600°C for 1 h. The Cu(Ag_0.3,N_0.4) film was thermally stable after annealing at 400°C for 240 h. The film’s resistivity was ∼2.2 μΩ cm after annealing at 600°C, while its leakage current was found to be lower than that of a pure Cu film by three orders of magnitude. The adhesion of the Cu(Ag_1.2,N_0.7) film to the Si substrate was approximately seven times that of a pure Cu film to a silicon substrate. Hence, a Cu film doped with Ag and N seems to be a better candidate for both barrierless metallization and the making of superior interconnects.     

The Application of Barrierless Metallization in Making Copper Alloy,Cu(RuHfN), Films for Fine Interconnects

In this study, films of a copper (Cu) alloy, Cu(RuHfN _x ), were deposited on silicon (Si) substrates with high thermal stability by co-sputtering copper and minute amounts of Hf or Hf/Ru in an Ar/N₂ gas mixture. The Cu(RuHfN _x ) films were thermally stable up to 720°C; after annealing at 720°C for 1 h, the thermal stability was great enough to avoid undesired reaction between the copper and the silicon. No copper silicide was formed at the Cu–Si interface for the films after annealing at 720°C for 1 h. The Cu(RuHfN _x ) films appear to be good candidate interconnect materials.     

DNA cleavage and degradation by the SbcCD protein complex from Escherichia coli

The SbcCD protein is a member of a group of nucleases found in bacteriophage T4 and T5, eubacteria, archaebacteria, yeast, Drosophila, mouse and man. Evidence from electron microscopy has revealed a distinctive structure consisting of two globular domains linked by a long region of coiled coil, similar to that predicted for the members of the SMC family. That a nuclease should have such an unusual structure suggests that its mode of action may be complex. Here we show that the protein degrades duplex DNA in a 3'-->5' direction. This degradation releases products half the length of the original duplex suggesting simultaneous degradation from two duplex ends. This may provide a link to the unusual structure of the protein since our data are consistent with recognition and cleavage of DNA ends followed by 3'-->5' nicking by two nucleolytic centres within a single nuclease molecule that releases a half length limit product. We also show that cleavage is not simply at the point of a single-strand/double-stand transition and that despite the dominant 3'-->5' polarity of degradation, a 5' single-strand can be cleaved when attached to duplex DNA. The implications of this mechanism for the processing of hairpins formed during DNA replication are discussed.     

Yttrium oxide thin films: Influence of the oxygen vacancy network organization on the microstructure

Y₂O₃ thin films are deposited by ion beam sputtering on Si, SrTiO₃ and MgO substrates. In order to obtain a better knowledge on the phase transition mechanisms in yttrium oxide, the effects of ion implantation have been studied as a function of the initial microstructure of thin films. The different microstructures for the as-deposited and implanted samples have been studied and characterized by means of X ray diffraction, High Resolution Transmission Electron Microscopy and Electron Energy Loss Spectroscopy and are compared to the cubic-C and monoclinic-B phase of Y₂O₃. The experimental results show clearly the presence of non-equilibrium phases in the implanted and non-implanted thin films. A particular attention is paid to the understanding of the relationship between the oxygen vacancy network organization, the stoichiometry and the formation mechanisms of these crystallographic phases.     

Untangling factors influencing social networking sites use among older adults: a literature review

Universal Access in the Information Society - While social networking sites (SNSs) have become a popular communication tool for younger generations, their use has gained popularity among older...