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The effects of linear doping profile near the source and drain contacts on the switching and high- frequency characteristics for conventional single-material-gate CNTFET (C-CNTFET) and hetero-material-gate CNTFET (HMG-CNTFET) have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations. The simulation results show that at a CNT channel length of 20 nm with chirality (7, 0), the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects (SCEs) in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications. 相似文献
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从环境污染应急预案编制、演练、实施以及应急保障等方面分析了水乡油田环境污染应急体系建立过程中需要注意的事项,并针对该企业环境污染应急体系建立过程中出现的问题,从应急预案编制、演练与实施以及应急保障方面提出了建议及初步解决措施。 相似文献
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提出了一种数值模拟方法,用于研究准一维碳纳米管系统的含时输运特性。基于非平衡格林函数,通过提出的方法,对准一维碳纳米管系统的电学性质进行数值计算。计算结果显示:当同一连续方波作用于电极时,电极与碳纳米管之间的耦合能越大,电流的最初上升值越大,弛豫时间越短;当输入电压为低频正弦信号,响应电流曲线变得不规则。本仿真结果有利于对纳米材料电学性质的评估,为纳米电子器件的设计和优化提供理论指导。 相似文献
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