Numerical simulation of the multicomponent mass transfer during Bridgman growth of CdZnTe crystal using Maxwell-Stefan diffusion model

To reveal the complicated mechanism of the multicomponent mass transfer during the growth of ternary compound semiconductors, a numerical model based on Maxwell-Stefan equations was developed to simulate the Bridgman growth of CdZnTe crystal. The Maxwell-Stefan diffusion coefficients in the melt were estimated. Distributions of Zn, Cd, and Te were calculated with variable ampoule traveling rate and diffusion coefficients. The experimental results show that Zn in melt near the growth interface decreases and diffuses from the bulk melt to the growth interface. For Cd, the situation is just the opposite. The coupling effects of Zn and Cd diffusions result in an uphill diffusion of Te at the beginning of the growth. Throughout the growth, the concentration of Te in the melt keeps low near the growth interface but high far from the growth interface. Increasing the ampoule traveling rate will aggravate the segregation of Zn and Cd, and hence deteriorate the uniformity of Te. We also find that not only the diffusion coefficients but also the ratios between them have significant influence on the species diffusions.     

包埋渗铝法制备Fe-Al渗层及其扩散机制

包埋渗铝法可在钢基体表面制备出一层致密、坚固、连续的Fe-Al渗层，以改善基体性能。本文在不同温度和不同时间下对Q235低碳钢进行包埋渗铝，形成Fe-Al渗层，采用X射线衍射、扫描电镜及能谱分析等方法研究了渗铝层的物相结构、表面及截面形貌和成分，采用显微硬度仪测量了截面硬度。结果表明，不同渗铝温度下获得的渗铝层，主要含有Fe₂Al₅和FeAl₃两相，且750℃得到的渗层存在较多Fe₂Al₅相；随着渗铝温度升高，Fe-Al渗层厚度增加，Al原子扩散系数增大，但显微硬度降低；不同渗铝时间下制备的渗铝层，物相仍以Fe₂Al₅和FeAl₃为主，但随着渗铝时间延长，FeAl₃含量减少，且Al原子扩散系数变大，渗层显微硬度略有降低。在进一步分析Fe-Al渗层形成的热力学与动力学基础上，总结了渗铝层形成的扩散机制。     

ACRT技术对大尺寸ZnTe晶体溶液法制备及其性能影响

太赫兹(Terahertz,THz)技术在工业无损检测、科学研究和军事领域发挥着越来越重要的作用。作为太赫兹产生和探测最常用的电光晶体材料,ZnTe晶体在生长中依然面临众多挑战。为了制备大尺寸、均匀性好、高性能的ZnTe单晶,本研究在温度梯度溶液法生长ZnTe晶体过程中引入坩埚旋转加速技术,制备具有高结晶质量的ZnTe晶体。模拟计算得到不同坩埚旋转速度下生长界面处对流场和溶质分布,研究了坩埚旋转对晶体生长过程中的固液界面稳定性和晶体内Te夹杂分布的影响规律,证明坩埚旋转加速技术可以有效地促进熔体流动,改善溶质传质能力,稳定溶液法晶体生长的固液界面,不仅避免出现尾部混合相区,也减少了ZnTe晶体内Te夹杂相的数量并减小其尺寸。通过进一步优化坩埚旋转参数,制备出具有较高结晶质量的大尺寸ZnTe晶体(?60 mm)。同时,得益于晶体良好的均匀性,晶体对太赫兹的高响应区域超过90%,边缘效应小,满足太赫兹成像要求。研究表明,引入坩埚旋转加速技术为制备大尺寸ZnTe基电光晶体提供了新的思路。