Isomerization and Hydrocracking of n-Decane over Bimetallic Pt–Pd Clusters Supported on Mesoporous MCM-41 Catalysts

n-Decane hydroconversion has been investigated on bifunctional catalysts comprising bimetallic Pt–Pd clusters supported on an AlMCM-41 (n_Si/n_Al = 23) mesoporous molecular sieve. The catalytic activity of the bimetallic Pt–Pd catalysts is higher than that of the monometallic Pt and Pd catalysts. The good balance between the two catalytic functions, namely acid sites and metal sites, also results in a higher isomer yield at a substantially lower reaction temperature. Moreover, cracking on the metal sites (hydrogenolysis) is largely suppressed over certain bimetallic catalysts.     

Homogenization for Dispersion and Reduction in Length of Carbon Nanotubes

An important aspect that limits the use of carbon nanotubes (CNTs) is the difficulty in obtaining homogeneously dispersed CNTs of uniform length. Hence, homogenization of multi-walled carbon nanotubes (MWCNTs) and single-walled carbon nanotubes (SWCNTs) was carried out using bullet blender and the dispersion behavior was compared with that of ultrasonication. 1% sodium dodecyl sulphate (SDS), Triton-x-100 and polyethylene glycol 4000 were used as dispersing agents during homogenization. The dispersed CNTs were studied using transmission electron microscopy, ImageJ and Raman spectroscopy. Though dispersion and reduction in length of MWCNTs were observed both with ultrasonication and homogenization, lowest length range with about 75% reduction in polydispersity index was obtained on homogenization. Longer time of ultrasonication resulted in damage to small MWCNTs. Well dispersed and shorter MWCNTs were obtained with Triton-x-100 while reduction in length was minimum with SDS. SWCNTs of less than 1 μm length could be obtained by homogenization with Triton-x-100.     

Mesoporous Ru/Sn-SBA-15 catalysts: synthesis,characterization and catalytic activity towards hydrogenation of levulinic acid

Journal of Porous Materials - Among the various biomass-derived platform chemicals, levulinic acid (LA) has been identified as one of the top-10 important molecules by Department of Energy, United...     

Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films

In this work we present a study on the effect of annealing temperatures on the structural, morphological, electrical and optical characteristics of gallium doped zinc oxide (GZO), indium zinc oxide (IZO) and indium-tin-oxide (ITO) films. GZO and IZO films were deposited at room temperature by r.f. magnetron sputtering, whereas the ITO films were commercial ones purchased from Balzers. All films were annealed at temperatures of 250 and 500 °C in open air for 1 h. The GZO and ITO films were polycrystalline. The amorphous structure of as-deposited IZO films becomes crystalline on high temperature annealing (500 °C). The sheet resistivity increased with increase in annealing temperature. GZO films showed an increase of 6 orders of magnitude. The optical transmittance and band gap of as-deposited films varied with annealing. The highest transmittance (over 95 %) and maximum band gap (3.93 eV) have been obtained for ITO films.     

Method for identifying coherent generators

A method for identifying coherent generators in a power system is presented. The method is based on the property of equal acceleration for coherent machines and requires only the admittance matrix of the system and the moment of inertia of the generators. An expression is developed for the coherency index between any two generators in a power system, and, based on the value of this index, coherency or otherwise of the generators is established. A method of obtaining the dynamic equivalent of a coherent group is also described. The method of coherency identification and equivalencing is illustrated using a 12-machine sample system. The validity of the method is demonstrated by comparing the transient stability study results of the original system with those obtained for the reduced-order model of the system. The proposed method is computationally simple and fast and requires less memory.     

Temperature and stress distribution in ultrasonic metal welding—An FEA-based study

In ultrasonic welding, high frequency vibrations are combined with pressure to join two materials together quickly and securely, without producing significant amount of heat. During ultrasonic welding of sheet metal, normal and shear forces act on the parts to be welded and the weld interface. These forces are the result of ultrasonic vibrations of the tool, pressed onto the parts to be welded. In this study a model for the temperature distribution during welding and stress distribution in the horn and welded joints are presented. With the knowledge of the forces that act at the interface it is possible to control weld strength and avoid sonotrode welding (sticking of the sonotrode to the parts). The presented finite element model is capable of predicting the interface temperature and stress distribution during welding and their influences in the work piece, sonotrode and anvil. The study also included the effect of clamping forces, material thickness and coefficient of friction during heat generation at the weld interface.     

Studies on micro-structural and electrical properties of spray-deposited fluorine-doped tin oxide thin films from low-cost precursor

Thin films of fluorine-doped tin oxide (SnO₂:F) on glass were prepared by spray pyrolysis technique using stannous chloride (SnCl₂) and ammonium fluoride (NH₄F) as precursors. The as-prepared films were characterized for their structural and electrical properties and are discussed in detail in this article. The surface morphology studies revealed that the films are grainy and the roughness of undoped films has been reduced on fluorine doping. X-ray diffraction (XRD) studies revealed that the films are polycrystalline. It further revealed that the undoped films grow along the preferred orientation of (211), whereas all the doped films grow along (200). The minimum sheet resistance 1.75 Ω/□ achieved in the present study for the films doped with 15 wt.% F is the lowest among the reported values for these materials prepared using SnCl₂ precursor. The electrical transport phenomenon has been analyzed in order to find out the possible scattering mechanism that limiting the mobility of charge carriers.