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We have synthesized graphene film by the filtered cathodic vacuum arc (FCVA) technique and determined the number of layers in graphene films by various techniques. Amorphous carbon (a-C) films of different thicknesses (1, 2, 3, 6, 10 and 18 nm) were synthesized by the FCVA technique on Si/SiO2/Ni substrate and then annealed in vacuum at 800°C and cooled down to room temperature naturally to obtain graphene. Prepared graphene films were transferred on different substrates and characterized by the Raman spectroscopy, UV-VIS-NIR spectroscopy, high-resolution transmission electron microscopy (HRTEM), optical microscopy, atomic force microscopy (AFM) and sheet resistance to determine the number of layers present in the graphene films. Raman spectra of the prepared graphene films exhibit that there is red shift in the position of D, G and 2 D peak. The value of I2D/IG varied from 0.18 to 0.51, ID/IG varied from 0.82 to 1.02 and full width at half maximum of 2 D peak varied from 101.2 to 128.0 cm?1, for different thicknesses of graphene films, respectively. The value of transmittance decreases from 97 to 63.7% and that of sheet resistance increases from 460 to 1400 Ω/square with the increase in the thickness of the prepared graphene film. The HRTEM and AFM study revealed that the graphene synthesis from 1 nm thick a-C film possesses a single layer structure.  相似文献   
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Functionally Gradient Materials (FGM) are considered as a novel concept to implement graded functionality that otherwise cannot be achieved by conventional homogeneous materials. For biomedical applications, an ideal combination of bioactivity on the material surface as well as good physical property (strength/toughness/hardness) of the bulk is required in a designed FGM structure. In this perspective, the present work aims at providing a smooth gradation of functionality (enhanced toughening of the bulk, and retained biocompatibility of the surface) in a spark plasma processed hydroxyapatite-alumina-zirconia (HAp-Al2O3-YSZ) FGM bio-composite. In the current work HAp (fracture toughness ~ 1.5 MPa.m1/2) and YSZ (fracture toughness ~ 6.2 MPa.m1/2) are coupled with a transition layer of Al2O3 allowing minimum gradient of mechanical properties (especially the fracture toughness ~ 3.5 MPa.m1/2). The in vitro cyto-compatibilty of HAp-Al2O3-YSZ FGM was evaluated using L929 fibroblast cells and Saos-2 Osteoblast cells for their adhesion and growth. From analysis of the cell viability data, it is evident that FGM supports good cell proliferation after 2, 3, 4 days culture. The measured variation in hardness, fracture toughness and cellular adhesion across the cross section confirmed the smooth transition achieved for the FGM (HAp-Al2O3-YSZ) nanocomposite, i.e. enhanced bulk toughness combined with unrestricted surface bioactivity. Therefore, such designed biomaterials can serve as potential bone implants.  相似文献   
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A total of 60 patients from high risk group for deep vein thrombosis, which included the patients after major surgery and patients of primary venous diseases, were studied. Peripheral venous pressure measurement performed on 42 cases, detected deep vein abnormality in 6 patients (14.3%) only out of which 2 patients were designated as cases of deep vein thrombosis and 4 of chronic venous stasis syndrome. But phlebography detected deep vein thrombosis in 28 cases (46.6%) and other deep vein abnormalities in rest of the cases.  相似文献   
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Journal of Materials Science: Materials in Electronics - The plasmonic nature of Cu nanoparticles embedded in the glass is characterized and its dependence on annealing temperature and deposition...  相似文献   
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Phosphorus doped micro/nano crystalline silicon thin films have been deposited by the filtered cathodic vacuum arc technique at different substrate temperatures (Ts) ranging from room temperature (RT) to 350 °C. The films have been characterized by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, secondary ion mass spectroscopy, dark conductivity ( σ D), activation energy ( ΔE) and optical band gap (E g). The XRD patterns show that the RT grown film is amorphous in nature but high Ts (225 and 350 °C) deposited films have a crystalline structure with (111) and (220) crystal orientation. The crystallite size of the higher Ts grown silicon films evaluated was between 17 to 31 nm. Raman spectra reveal the amorphous nature of the film deposited at RT whereas higher Ts deposited films show a higher crystalline nature. The crystalline volume fraction of the silicon film deposited at higher Ts was estimated as 65.7 % and 74.4 %. The values of σ D, ΔE and E g of the silicon films deposited at different Ts were found to be in the range of 8.84 x 10 ?4? 0.98 ohm ?1 cm ?1, 0.06 - 0.31 eV and 1.31-1.93 eV, respectively. A n-type nc-Si/p-type c-Si heterojunction diode was fabricated which showed the diode ideality factor between 1.1 to 1.5.  相似文献   
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