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Papichaya Chaisakul Mohamed-Said Rouifed Jacopo Frigerio Daniel Chrastina Jean-René Coudevylle 《Science and Technology of Advanced Materials》2014,15(1)
Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz–Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic. 相似文献
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