首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   6篇
  免费   0篇
电工技术   1篇
化学工业   3篇
一般工业技术   2篇
  2022年   1篇
  2018年   2篇
  2016年   1篇
  2013年   1篇
  2012年   1篇
排序方式: 共有6条查询结果,搜索用时 31 毫秒
1
1.
Journal of Materials Science: Materials in Electronics - The new nanocomposites of silicon dioxide/reduced graphene oxide (SiO2/rGO) and silicon dioxide/nitrogen-doped reduced graphene oxide...  相似文献   
2.
This study aimed to fabricate and characterize new complex-structured ceramics with formula (1-x)Pb(Zr0.52Ti0.48)O3xSrBi2Nb2O9 or (1-x)PZT–xSBN (where x=0, 0.1, 0.3 and 0.5 weight fraction). The ceramics were prepared by a solid-state mixed-oxide method and sintered at temperatures between 1000 and 1250 °C. Optimum sintering temperature for this system was found to be 1050 °C for 3 h dwell time. X-ray diffraction patterns of (1-x)PZT–xSBN powders showed peak intensities of two-phase mixture corresponding to the relative amount of each phase as a result of SBN addition. Microstructure of (1-x)PZT–xSBN ceramics showed a variation in grain shape and grain size. The small addition of SBN (x=0.1) was also found to improve ferroelectric properties of pure PZT ceramic.  相似文献   
3.
The effect of Ta addition on the bipolar fatigue characteristics of lead-free KNL-NSTx ceramics (x = 0, 0.04, 0.07 and 0.11 mol%) is studied. Bipolar cycling up to 1 × 106 cycles leads to strong degradation of the polarization in unmodified KNL-NS ceramics. This can be explained by the development of strong domain wall pinning, leading to the build-up of high local stresses and consequently microcracking of the material. The addition of Ta reduces the domain wall pinning effect and improves the bipolar fatigue resistance. In order to understand the fatigue mechanism, a model based on oxygen vacancy accumulation is proposed. This model is expected to guide future fatigue studies that are concerned with novel lead-free KNN-based materials.  相似文献   
4.
The dielectric properties and electric-field-induced polarization and strain behavior of (1-x)PZT-xSBN (x ranged from 0 to 1.0 weight fraction) ceramics prepared by a conventional mixed-oxide method were investigated. The dielectric properties indicated that the dielectric constant of PZT could be enhanced with small addition of SBN (x = 0.1). From the polarization hysteresis loop measurements, it was found that the ferroelectric properties of nominal PZT-SBN ceramics changed strongly from the normal ferroelectric in PZT-rich ceramics to the paraelectric character in SBN-rich compositions. The strain hysteresis loops of nominal PZT-SBN under bipolar electric field loading suggested that the butterfly curve was observed in some compositions (0 ≤ x ≤ 0.3 and pure SBN ceramic). This research clearly showed the significance of SBN in controlling the electrical properties of nominal PZT-SBN ceramics.  相似文献   
5.
The effect of bipolar cyclic electrical loading on the ferroelectric and piezoelectric properties of KNN ceramics is investigated. The results showed that the bipolar fatigue leads to a decrease in domain switchability and piezoelectric responses of the ceramic. In the early period of cyclic loading, the fatigue mechanism is dominated by the domain wall pinning effect. When the number of fatigue cycles increases, the microstructural damage has a large impact on the fatigue process. From this, a qualitative model based on the relationship between domain pinning mechanism and internal stress is proposed.  相似文献   
6.
Barium titanate/silicon nitride (BaTiO3/xSi3N4) powder (when x = 0, 0.1, 0.5, 1 and 3 wt%) were prepared by solid-state mixed-oxide method and sintered at 1400 °C for 2 h. X-ray diffraction result suggested that tetragonality (c/a) of the BaTiO3/xSi3N4 ceramics increased with increasing content of Si3N4. Density and grain size of BaTiO3/xSi3N4 ceramic were found to increase for small addition (i.e. 0.1 and 0.5 wt%) of Si3N4 mainly due to the presence of liquid phase during sintering. BaTiO3 ceramics containing such amount of Si3N4 also showed improved dielectric and ferroelectric properties.  相似文献   
1
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号