Response of captive lowland gorillas (Gorilla gorilla gorilla) to different housing conditions: Testing the aggression-density and coping models.

Several studies have suggested that primates react differently to spatial reduction. In this article, the authors tested some general hypotheses on primate response to spatial reduction by studying the Apenheul lowland gorillas (Gorilla gorilla gorilla; Apeldoorn, the Netherlands). The frequency of conflicts did not greatly change between the 2 housing settings, thus not supporting the density- aggression model. Indoor, gorillas performed touching behavior more often and increased their level of reconciliation. These findings support the coping model. Indoor, the gorillas also maintained broader interindividual distances by increasing the levels of sitting alone, avoidance, and dismissing behaviors. In conclusion, the Apenheul gorillas modified selectively the distribution of some patterns typical of their behavioral repertoire in response to a high-density condition. Both avoidance and coping tactics were used, thus revealing high levels of behavioral flexibility in this species. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Time-To-Latch-Up investigation of SCR devices as ESD protection structures on 65 nm technology platform

The purpose of this work was to study the influence of different layout parameters on the electrical performances and Time-To-Latch-Up (TTLU) by means of the injection of substrate current on SCR devices to be used as ESD protection structures for the 65 nm Flash memory technology platform. Low (1.2 V) and high (5.0 V) voltage class devices were studied in DC and 100 ns TLP regimes, and an ad hoc setup was developed to investigate TTLU as a function of the injected current needed to Latch-Up HV-SCRs. Results were then compared to 2D device simulations.     

Optimal control of stochastic FitzHugh–Nagumo equation

This paper is concerned with the existence and uniqueness of solution for the optimal control problem governed by the stochastic FitzHugh–Nagumo equation driven by a Gaussian noise. First-order conditions of optimality are also obtained.     

Holding voltage investigation of advanced SCR-based protection structures for CMOS technology

A new silicon-controlled rectifier low voltage triggered (SCR-LVT), to be adopted as protection structure against electrostatic discharge (ESD) events, has been developed and characterized. A high holding voltage has been obtained thanks to the insertion of two parasitic bipolar transistors, achieved adding a n-buried region to a conventional SCR structure. These two parasitic transistors partially destroy the loop feedback gain of the two main npn and pnp BJTs, resulting in an increase of the sustaining (holding) voltage during the ESD event. A strong dependence of the holding voltage with the ESD pulse width has also been observed, caused by self-heating effects. 2D-device simulations (DESSIS Synopsys) have been performed obtaining results that perfectly fit the measurements over a wide temperature range (25 °C − 125 °C). Using device simulation results, the factors that influence the holding voltage, in terms of temperature dependence, but also in the behavior of the parasitic BJTs, are explained. A guideline to change the SCR holding voltage, related to the SCR design layout without any change to process parameters, is also proposed.