低频电压下XLPE电树枝生长及局部放电特性

低频电缆作为柔性低频交流输电系统中的关键设备,其绝缘介质在低频电压下的特性对电缆的设计和运行具有重要意义。为了研究低频电压下交联聚乙烯（XLPE）电树枝的生长及局部放电特性,设计并搭建了不同频率下电树枝生长实时观测和局部放电同步测量系统,探究了XLPE试样分别在20、30、40、50 Hz频率下电树枝的引发、生长及局部放电特性。结果表明：电压频率对XLPE电树枝生长及局部放电特性的影响有明显规律性。在20～50 Hz范围内,随着频率的降低,XLPE的起树电压略有升高,但电树枝生长速度加快,损伤面积增加,局部放电量和放电次数增大,放电相位分布基本不变。     

不同电场下硅橡胶直流沿面闪络特性实验研究

为进一步探究聚合物绝缘材料的沿面闪络特性,搭建了沿面闪络实验平台,在不同电场下对硅橡胶(Si R)进行沿面闪络实验。通过图像处理技术及数值计算方法对沿面闪络光、电特性进行分析,探索并建立了沿面闪络光、电特性间的关联。结果表明:沿面闪络的光、电特性与电场分布有关。与稍不均匀电场相比,极不均匀电场下沿面闪络发光强度较低、放电通道分形维数较小;并且极不均匀电场下闪络电压较低,放电能量较小。沿面闪络的光、电特性存在一定关联。通常地,闪络电压、电流较大时,闪络通道的亮度较大且分布范围较广,沿面放电能量较高。因此,沿面闪络的光、电特性参数能够有效反映绝缘材料的沿面绝缘强度。     

空气中不同表面粗糙度PMMA表面电荷动态特性研究

绝缘材料的表面物化特性会对其绝缘性能产生重要影响,为研究绝缘材料表面形貌与表面电荷的关系,通过对有机玻璃(PMMA)进行电晕充电,分析电压极性、表面粗糙度、打磨方式对材料表面电荷动态特性的影响。结果表明:打磨处理后PMMA表面电荷动态特性发生改变,在负极性电压下,顺序打磨后材料表面电荷积聚量较未打磨的少,乱序打磨后材料表面电荷积聚量增多。对于电荷消散速率,当材料表面粗糙度较小时,顺序打磨后消散速度较未打磨的快,随着表面粗糙度的增大,消散速度变慢;乱序打磨后电荷消散速度变慢,随着粗糙度的增大,电荷消散速度减慢的现象更为明显。实验中材料表面电荷消散途径主要沿介质表面消散,且负极性表面电荷的消散速率大于正极性表面电荷的消散速率。     

Deposition of SiC_xH_yO_z thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

Non-thermal plasma surface modification for epoxy resin(EP)to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulatedtransmission line.In this paper,a pulsed Ar dual dielectrics atmospheric-pressure plasma jet(APPJ)was used for Si C_xH_yO_zthin film deposition on EP samples.The film deposition was optimized by varying the treatment time while other parameters were kept at constants(treatment distance:10 mm,precursor flow rate:0.6 l min~(-1),maximum instantaneous power:3.08 k W and single pulse energy:0.18 m J).It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18%and 13%when the deposition time was3 min,respectively.The flashover voltage reduced as treatment time increased.Moreover,all the surface conductivity,surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min.Other measurements,such as atomic force microscopy and scanning electron microscope for EP surface morphology,Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions,optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms.The results indicated that the original organic groups(C–H,C–C,C=O,C=C)were gradually replaced by the Si containing inorganic groups(Si–O–Si and Si–OH).The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage.However,when the plasma treatment time was longer than 3 min,the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.     

等离子体射流快速改性促进表面电荷衰减

随着高压直流输电迅猛发展,绝缘材料在直流电压下表面电荷积聚现象严重威胁直流输电系统的安全可靠运行。为加快绝缘材料表面电荷的消散,采用大气压等离子体射流,以TEOS为前驱物,在环氧树脂表面沉积SiO_x薄膜。对改性前后材料表面化学组成、表面电导率、表面电荷特性、表面陷阱分布以及耐压特性进行多参数测量,研究等离子体射流改性前后环氧树脂表面特性。实验结果表明:等离子体处理在环氧树脂表面引入大量以Si-O-Si及Si-OH基团为主的无机基团,且表面电导率提高2个数量级。随着改性时间的延长,表面电荷的初始积聚量减少,消散速度加快,陷阱能级深度变浅;沿面闪络电压呈现先增后降的趋势,在改性180s时闪络电压提高到最高值9.0k V。研究结果表明:通过大气压等离子体射流在聚合物表面沉积薄膜能够提高环氧树脂绝缘性能,为其工程应用提供了有效的改性方法。