Nano and Microtechnologies for the Study of Magnetotactic Bacteria

Magnetotactic bacteria (MTB) naturally synthesize magnetic nanoparticles that are wrapped in lipid membranes. These membrane‐bound particles, which are known as magnetosomes, are characterized by their narrow size distribution, high colloidal stability, and homogenous magnetic properties. These characteristics of magnetosomes confer them with significant value as materials for biomedical and industrial applications. MTB are also a model system to study key biological questions relating to formation of bacterial organelles, metal homeostasis, biomineralization, and magnetoaerotaxis. The similar size scale of nano and microfluidic systems to MTB and ease of coupling to local magnetic fields make them especially useful to study and analyze MTB. In this Review, a summary of nano‐ and microtechnologies that are developed for purposes such as MTB sorting, genetic engineering, and motility assays is provided. The use of existing platforms that can be adapted for large‐scale MTB processing including microfluidic bioreactors is also described. As this is a relatively new field, future synergistic research directions coupling MTB, and nano‐ and microfluidics are also suggested. It is hoped that this Review could start to bridge scientific communities and jump‐start new ideas in MTB research that can be made possible with nano‐ and microfluidic technologies.     

Full AC analysis of value of DER to the grid and optimal DER scheduling

This paper presents part of the work ComEd and Quanta Technology have performed to quantify the locational and temporal value of DER to avoid distribution grid upgrade investments. It focuses on the formulation of a robust and efficient algorithm for DER optimal dispatch on a distribution feeder to mitigate the violation of current and voltage limits using the allocated cost of capacity and locational marginal value of real and reactive DER injection/withdrawal.     

THE effect of Srandom DOPANT fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel.     

Introducing a new classification of soft rocks based on the main geological and engineering aspects

Bulletin of Engineering Geology and the Environment - Soft rock masses represent a significant percentage of rock material on the earth’s crust. The engineering properties of these rocks are...