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1.
Dye sensitized solar cell (DSSC) can be an economically viable and technically simpler alternate to the silicon based solar cells. Films of nanocrystalline titanium dioxide (TiO2) are considered as the most suitable photoelectrode for DSSC. For this study, TiO2 powder of anatase phase, synthesized in acidic environment was used. The average diameter of the nanoparticles was ~20 nm and BET surface area was 64.68 m2/g. Different TiO2 pastes were prepared by varying the proportion of TiO2 powder, α-terpineol, and ethyl cellulose (EC) in their composition. The TiO2 paste was cast on fluorine doped tin oxide (FTO) coated glass surface using doctor blade to prepare photoelectrode of TiO2 film. Composition of the paste ingredients was optimized by comparing the conversion efficiencies of the DSSCs fabricated with the photoelectrode of thickness ~18 μm. The outcome of this study can be crucial for the preparation of reliable TiO2 paste in a simple way for its application in DSSC.  相似文献   
2.
This paper reports a novel approach on the surface treatment of monocrystalline silicon solar cells using an inorganic chemical, sodium hypochlorite (NaOCl) that has some remarkable properties. The treatment of contaminated crystalline silicon wafer with hot NaOCl helps the removal of organic contaminants due to its oxidizing properties. The objective of this paper is to establish the effectiveness of this treatment using hot NaOCl solution before the saw damage removal step of the conventional NaOH texturing approach. A comparative study of surface morphology and FTIR analyses of textured monocrystalline silicon surfaces with and without NaOCl pre-treatment is also reported. The process could result in a significant low cost approach viable for cleaning silicon wafers on a mass production scale.  相似文献   
3.
Low-cost, large area, random and mask less texturing scheme independent of crystal orientation are some of the factors that significantly influence the success of terrestrial photovoltaic technology. This work is focused on the texturing of the silicon surface microstructures by reactive ion etching using a multi-hollow cathode system. Desirable texturing effect has been achieved by applying a radio-frequency power of about 20 W per hollow cathode glow. The etched silicon surface shows almost zero reflectance in the visible region as well as in near-IR region. The silicon surface is covered by columnar microstructures with diameters ranging from 50 to 100 nm and with a depth of about 500 nm. Solar cells with efficiencies of 11.7% and 10.2% with black mono-crystalline and multi-crystalline silicon wafers, respectively, were successfully fabricated and tested.  相似文献   
4.
Alkali etchant cannot produce uniformly textured surface to generate satisfactory open circuit voltage as well as the efficiency of the multi-crystalline silicon (mc-Si) solar cell due to the unavoidable grain boundary delineation with higher steps formed between successive grains of different orientations during alkali etching of mc-Si. Acid textured surface formed by using chemicals with HNO3–HF–CH3COOH combination generally helps to improve the open circuit voltage but always gives lower short circuit current due to high reflectivity. Texturing mc-Si surface without grain boundary delineation is the present key issue of mc-Si research. We report the isotropic texturing with HF–HNO3–H2O solution as an easy and reliable process for mc-Si texturing. Isotropic etching with acidic solution includes the formation of meso- and macro-porous structures on mc-Si that helps to minimize the grain-boundary delineation and also lowers the reflectivity of etched surface. The study of surface morphology and reflectivity of different mc-Si etched surfaces has been discussed in this paper. Using our best chemical recipe, we are able to fabricate mc-Si solar cell of 14% conversion efficiency with PECVD AR coating of silicon nitride film. The isotropic texturing approach can be instrumental to achieve high efficiency in mass production using relatively low-cost silicon wafers as starting material with the proper optimization of the fabrication steps.  相似文献   
5.
Back surface passivation becomes a key issue for the silicon solar cells made with thin wafers. The high surface recombination due to the metal contacts can be lowered by reducing the back contact area and forming local back surface field (LBSF) in conjunction with the passivation with dielectric layer. About 3×10-7 m thick porous silicon (PS) layer with pore diameter mostly of 1×10-8–5×10-8 m was formed by chemical etching of silicon using the acidic solution containing hydrofluoric acid (HF), nitric acid (HNO3) and De-ionized water in the volume ratio 1:3:5 at 298 K for which etching time was kept constant for 360 s. Electrical properties of oxidized PS was studied through the current–voltage (IV) and capacitance–voltage (CV) characteristics of the metal–insulator–semiconductor (MIS) device in which the oxidized PS was used as an insulating layer and the results were further analyzed. The CV curves of all the studies MIS devices showed the negative flatband voltage varying from -2 to , confirming that the oxidized layer of PS has fixed positive charge.  相似文献   
6.
Texturization of mono-crystalline silicon for solar cell fabrication is still a key issue due to consumption of large amount of costly isopropyl alcohol (IPA) in conventional NaOH/KOH solution. The need of IPA arises due to the improvement in the uniformity of pyramidal structures and elimination of spots caused by bubbles sticking on the wafer surface during the texturization process. We investigated a new texturization technique for mono-crystalline silicon solar cells with tribasic sodium phosphate (Na3PO4, 12H2O) solution with much less amount of IPA. The proposed texturization method of this paper is cost effective due to reduction in the consumption of expensive IPA. The cost comparison of our novel texturization approach with conventional NaOH texturization has also been reported in this paper. We are reporting for the first time such a novel approach of using tribasic sodium phosphate for texturization of mono-crystalline silicon surface with which solar cells of efficiency 14–14.8% are fabricated with more than 90% yield.  相似文献   
7.
The process conditions for a high-efficiency and low cost crystalline silicon solar cell were optimized. Novel approaches such as wafer cleaning and saw -damage removal using 0.5 wt% of 2,4,6-trichloro-1,3,5-triazine, silicon surface texturing with optimized pyramid heights (∼5 μm), and a third step of drive-in after phosphosilicate glass (PSG) removal followed by oxide removal were investigated. A simple method of chemical etching adopted for edge isolation was optimized with edge etching of 5-10 μm, without any penetration of chemicals between the stacked wafers. The conversion efficiency, open-circuit voltage, short-circuit current, and fill factor of the cell fabricated with the optimized process were a maximum of 17.12%, 618.4 mV, 5.32 A, and 77% under AM1.5 conditions, respectively.  相似文献   
8.
Aluminium nitride (AlN) thin films were deposited by radio frequency (RF) magnetron sputtering on p-type silicon (Si) substrate of (1 0 0) orientation using only argon (Ar) gas at substrate temperature of 300 °C. In order to achieve improved electrical properties, we performed post-deposition rapid thermal annealing (RTA). Sputtered AlN films were annealed in an oxygen ambient at temperatures of 600, 700, and 800 °C using RTA for 30 min. The orientation of the AlN crystal in the film was investigated using X-ray diffraction (XRD). The characteristic spectra by functional group were analyzed by Fourier transformation infrared (FTIR) spectroscopy. The electrical properties of the AlN thin films were studied through capacitance–voltage (C–V) characteristics in metal–insulator–semiconductor (MIS) device using the films as insulating layers. The flatband voltages (VFB) in C–V curves were found to depend on crystal orientations. Negative VFB was found in the case when AlN (1 0 0) peak was found. Also, when AlN (1 0 3) peak was observed upon increasing the annealing temperature, the value of VFB was positive and after annealing at 700 °C, AlN (1 0 3) peak intensity was found to be maximum and VFB was as high as+6.5 V.  相似文献   
9.
We assessed the climate‐driven changes in ecologically relevant flow regimes expected to occur by the year 2100 in streams across the conterminous United States. We used long‐term daily flow measurements from 601 gauged streams whose watersheds were in relatively natural condition to characterize spatial variation in 16 flow regime variables selected for their ecological importance. Principal component analysis of these 16 variables produced five uncorrelated factors that described patterns of spatial covariation in flow regimes. These five factors were associated with low flow, magnitude, flashiness, timing, and constancy characteristics of the daily flow regime. We applied hierarchical clustering to the five flow factors to classify the 601 streams into three coarses and eight more finely resolved flow regime classes. We then developed a random forest model that used watershed and climate attributes to predict the probabilities that streams belonged to each of the eight finely resolved flow regime classes. The model had a prediction accuracy (per cent correct classification) of 75%. We used the random forest model with downscaled climate (precipitation and temperature) projections to predict site‐specific changes in flow regime classes expected by 2100. Thirty‐three per cent of the 601 sites were predicted to change to a different flow regime class by 2100. Snow‐fed streams in the western USA were predicted to be less likely to change regimes, whereas both small, perennial, rain‐fed streams and intermittent streams in the central and eastern USA were predicted to be most likely to change regime. Copyright © 2016 John Wiley & Sons, Ltd.  相似文献   
10.
Measurement and mitigation of BitTorrent leecher attacks   总被引:2,自引:0,他引:2  
In the recent past, anti-P2P companies have successfully curtailed the distribution of targeted content over a number of P2P file-sharing systems, including Kazaa and eDonkey. More recently, anti-P2P companies have begun to attack BitTorrent. In this paper, we analyze the resilience of BitTorrent leechers to two different kinds of attacks: the connection attack and the piece attack. We present the results of both passive and active measurements. Using passive measurements, we performed a detailed analysis of a recent album that is under attack, and identified the behavior of attackers. For our active measurements, we developed a crawler that contacts all the peers in any given swarm, determines whether the swarm is under attack, and identifies the attack peers in the swarm. We used the crawler to analyze 8 top box-office movies. Based on the measurement results, we discovered that BitTorrent architecture is fundamentally resilient to Internet leecher attacks. Finally, we also propose defense mechanisms to further mitigate the attacks and evaluate their effectiveness using trace-driven simulation.  相似文献   
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