Characterization of anisotropic gas permeability and thermomechanical properties of highly textured porous alumina

Porous alumina with a highly textured microstructure was fabricated by pulse electric current sintering (PECS) using alumina platelets. Highly oriented porous alumina with a porosity of 3%–50% was obtained by a pressure-controlled method of PECS. The properties of the highly textured porous alumina were measured in two directions. The nitrogen gas permeance and thermal conductivity at room temperature were higher in the direction along the platelet length due to the higher continuity of pores and the connectivity of alumina platelets, respectively. The anisotropy of the thermal conductivity at room temperature was investigated and explained by the effect of grain size of platelets as well as morphology and orientation of pores. The bending strength was higher with the loading direction along the platelet thickness. The thermal shock strength was clearly different in the two directions. The difference in the thermal shock strength was investigated by the measurement of properties and thermal stress analysis.     

An efficient manufacturing method for I-shaped cross-sectional CFRP beam with arbitrary arrangement of carbon fiber using electro-activated resin molding

Abstract

The I-shaped cross-sectional beam of CFRP (CFRP I-beam) is usually manufactured by the continuous protrusion method. Carbon fibers can only be arranged in the longitudinal direction. The CFRP I-beam with arbitrary arrangement of carbon fiber was manufactured with applying the electro-activated deposition molding method. The carbon fiber fabric was immersed in the deposition solution and energized, epoxy resin precipitated around carbon fiber and impregnated. The resin-impregnated fabric was installed to the mold, and the CFRP I-beam was fabricated. The CFRP I-beam was subjected to three-point bending tests, and the relationship between load-deflection was simulated by finite-element analysis.     

Vapor absorption by LiBr aqueous solution in vertical smooth tubes

Heat and mass transfer in a falling film vertical in-tube absorber was studied experimentally with LiBr aqueous solution. The presented results include the effect of solution flow rate, solution subcooling and cooling water temperature on the absorption in a smooth copper tube 16.05 mm I.D. and 400 mm long. The experimental data in the previous report for a 1200-mm-long tube was also re-examined and compared. It was demonstrated by the observation of the flow in the tube that the break down of the liquid film into rivulets leads to deterioration of heat and mass transfer at lower film Reynolds number or in longer tubes. An attempt to evaluate physically acceptable heat and mass transfer coefficients that are defined with estimated temperature and concentration at the vapor–liquid interface was also presented.     

Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

The effect of CF₄ plasma etching on diamond surfaces, with respect to treatment time, was investigated using scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and electrochemical measurements. SEM observations and Raman spectra indicated an increase in surface roughening on a scale of 10–20 nm, and an increase in crystal defect density was apparent with treatment time in the range of 10 s to 30 min. In contrast, alteration of the diamond surface terminations from oxygen to fluorine was found to be rather rapid, with saturation of the F/C atomic ratio estimated from XPS analysis after treatment durations of 1 min and more. The redox kinetics of Fe(CN)₆^3−/4− was also found to be significantly modified after 10 s of CF₄ plasma treatment. This behavior shows that C–F terminations predominantly affect the redox kinetics compared to the effect on the surface roughness and crystal defects. The double-layer capacitance (C_dl) of the electrolyte/CF₄ plasma-treated boron-doped diamond interface was found to show a minimum value at 1 min of treatment. These results indicate that a short-duration CF₄ plasma treatment is effective for the fabrication of fluorine-terminated diamond surfaces without undesirable surface damage.     

Resource contention in shared-memory multiprocessors: A parameterized performance degradation model

A standard metric conventionally employed to compare the performance of different multiprocessor systems is speedup. Although providing a measure of the improvement in execution speed achievable on a system, this metric does not yield any insight into the factors responsible for limiting the potential improvement in speed. This paper studies the performance degradation in shared-memory multiprocessors as a result of contention for shared-memory resources. A replicate workload framework with a flexible mechanism for workload specification is proposed for measuring performance. Two normalized performance metrics—efficiency and overhead factor—are introduced to quantify the factors limiting performance and facilitate comparison across architectures. Finally, the proposed model is employed to measure and compare the performance of three contemporary shared-memory systems, with special emphasis on the newly released BBN Butterfly-II (TC2000), currently undergoing Beta test.     

Hydrogen absorption by Pd-coated ZrNi prepared by using Barrel-Sputtering System

To improve the durability of hydrogen storage materials against surface poisoning by impurity gases, effectiveness of Pd-coating layer prepared by using a Barrel-Sputtering System was examined for ZrNi powder. The effectiveness of Pd-coating was evaluated by activation temperature, at which Pd/ZrNi poisoned by air could be activated to absorb hydrogen. Characterization of Pd-coated ZrNi (denoted as Pd/ZrNi) by scanning electron microscopy, electron probe microanalysis and X-ray diffraction showed that a uniform Pd-coating layer was formed with the barrel-sputtering system. It was found that the poisoned Pd/ZrNi sample could be activated even at 423 K to absorb hydrogen at room temperature. This exhibits remarkable contrast to bare ZrNi, which could be only activated appreciably above 1073 K. It is concluded that the Pd-coating by barrel sputtering is quite effective to avoid the effect of surface poisoning of powdery hydrogen storage materials. However, the activation at excessively high temperature resulted in the loss of high activity to absorb hydrogen. It was concluded that this phenomenon was associated with reactions between Pd and ZrNi to form PdZr and other byproducts.     

Deposition rate dependence of coercivity in vaccum evaporated CoCr films

Deposition rate dependence of perpendicular coercivity Hcl in Cocr evaporated films at the deposition rate ranging from 0.4nm/s to 400nm/s is studied. Hcl increases with decreasing deposition rate as well as with increasing substrate temperature. A High Hcl over 500 Oe, which has ever been obtained only at a substrate temperature over 250°C when deposition rate is high(400nm/s), is obtained at a substrate temperature of 150°C under deposition rate of 2nm/s. "Shoulder" in the hysteresis loop disappears as Hcl exceeds 400 Oe. Therefore to decrease the deposition rate and to increase the substrate temperature have the same effect on Hcl. Saturation magnetization of the films with the same Cr concentration increases with decreasing deposition rate, and it is suggested that the degree of Cr segregation increases with decreasing deposition rate. Hcl is independent of the background pressure when the relative pressure, the quotient of (background pressure/deposition rate), is between 2×10^-8and 5×10^-6torr/(nm/s). From the results above, it is clarified that the difference of deposition rate between vacuum evaporation and sputtering is one of the major reasons for the difference of Hcl between the two.     

A 7 ns 1 Mb BiCMOS ECL SRAM with shift redundancy

A 7-Mb BiCMOS ECL (emitter coupled logic) SRAM was fabricated in a 0.8 μm BiCMOS process. An improved buffer with a high-level output of nearly V_CC is adopted to eliminate the DC current in the level converter circuit, and the PMOS transistor has a wide operating margin in the level converter. The configurable bit organization is realized by using a sense-amplifier switch circuit with no access degradation. A wired-OR demultiplexer for the ×1 output, having the same critical path as the ×4 output circuit, allows for the same access time between the two modes. The ×1 or ×4 mode is electrically selected by the external signal. A simplified programming redundancy technology, shift redundancy, is utilized. Address programming is performed by cutting only one fuse in the shift redundancy. The RAM operates at the ECL-10K level with an access time of 7 ns. and the power dissipation at 50 MHz is 600 mW for the × mode     

Effects of Working Fluid,Tubeside Enhancement and Bundle Depth on the Optimized Fin Geometry of a Horizontal Condenser Tube

A theoretical study has been made to optimize the fin geometry of a horizontal finned tube which is to be usedfor condensers that handle the vapor load of a liquid phase change cooling module.Systematic numerical calcu-lations of the vapor to coolant heat transfer have been performed for parametric values of fin height,fin spacing,vertical bundle depth and tubeside heat transfer coefficient.Three dielectric fluids (R-113,FC-72,and FC-87)at atmospheric pressure were selected as the working fluids.For a single tube with optimized fin geometry,theaverage heat flux increased in the order of FC-87,R-113 and FC-72.Both the optimum fin height and optimumfin spacing increased with increasing vertical bundle depth.