酸性废水中As(Ⅲ)、Cu(Ⅱ)与铁粉的反应行为

在Fe-As(Ⅲ)-Cu(Ⅱ)-H₂O体系中, 研究了酸性废水中As(Ⅲ)、Cu(Ⅱ)与金属铁粉的反应行为, 考察了反应过程中As在气、液、固三相中的分配比。结果表明, As(Ⅲ)和Cu(Ⅱ)离子被Fe还原为单质As和Cu后, As、Cu进一步结合成Cu₅As₂等金属间化合物, 从而促进As(Ⅲ)沉淀反应的发生, 且无AsH3生成。在反应时间40min、铁粉过量系数1.2、溶液初始pH=0.0、温度40 ℃、Cu/As摩尔比1.0条件下, As在气、液、固三相中的分配比分别为0、20.7%和79.3%, 沉砷率为79.3%。     

InxGa1−xAs ohmic contacts to n-type GaAs with a tungsten nitride barrier

Significant reduction of the contact resistance of In_0.7Ga_0.3As/Ni/W contacts (which were previously developed by sputtering in our laboratory) was achieved by depositing a W₂N barrier layer between the Ni layer and W layer. The In_0.7Ga_0.3 As/Ni/W₂N/W contact prepared by the radio-frequency sputtering technique showed the lowest contact resistance of 0.2 Ωmm after annealing at 550°C for 10 s. This contact also provided a smooth surface, good reproducibility, and excellent thermal stability at 400°C. The polycrystalline W₂N layer was found to suppress the In diffusion to the contact surface, leading to improvement of the surface morphology and an increase in the total area of the In_xGa−As between metal and the GaAs substrate. These improvements are believed to reduce the contact resistance.     

Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As Grown on InP

We have studied properties of quaternary alloy magnetic semiconductor (InGaMn)As grown on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). A large MCD peak whose intensity is larger than 500 mdeg for (InGaMn)As was observed. This peak intensity was about three times larger than that of typical (GaMn)As films. Relatively high Curie temperature of 83 K of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was observed by Hall measurements. The carrier concentration of [(In_0.53Ga_0.47)_0.88Mn_0.12]As was estimated to be more than 1.0 × 10²¹ cm^–3 by using the Curie–Weiss fitting of the Hall coefficient R _H, indicating that more than 40% of Mn atoms are activated. This means that (InGaMn)As has a higher activation ratio of Mn as acceptors than (GaMn)As.     

AlxGa1-xAs选择性湿法氧化技术的研究

详细研究了温度和Al组分与AlxGa1-xAs横向氧化速率的关系,通过分析氧化机制和实验得到的氧化宽度与时间的线性关系,指出在较短时间内的氧化为受AlxGa1-xAs材料与水汽反应速率限制的过程。运用优化的氧化条件,成功制备了氧化孔径为8μm的垂直腔面发射激光器,最大直流光输出功率为3.2mW,激射波长为978nm,工作电流为15mA。     

氯化铵在含砷金银铅锌矿选别中的应用

某多金属铅锌矿含砷较高．采用常规铅、锌优先浮选方法，铅、锌精矿中砷含量超标。为了解决铅、锌精矿中砷超标的问题，在铅、锌粗、精选作业中加入氯化铵，成功地降低了铅、锌精矿中砷的含量，使铅、锌精矿质量合格．将这一结果应用于生产，取得了良好的效果。     

含砷、锑、碳难处理金精矿焙烧氰化提金工艺研究

镇沅含砷、锑、碳难处理金精矿直接氰化金浸出率小于 10 % ,采用常规焙烧 -焙砂氰化提金工艺金浸出率仅达到 73 2 % ,而采用先行除锑 ,再焙烧脱除硫、碳、砷的提金工艺方案 ,金氰化浸出率达到90 4 % ,同时锑可作为锑精矿外售 ,经济效益明显。     

Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy

The defect engineering in metalorganic vapor phase epitaxy In_xGa_1-xAs and InP by controlled oxygen doping using diethyl aluminum ethoxide (DEALO) was developed in this study. DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in In_xGa_1−xAs: Si with 0 ≤ x ≤ 0.25. With the same DEALO mole fraction during growth, the incorporation of Al and O was found to be independent of x, but the compensation of Si donors decreases with increasing In content. Deep level transient spectroscopy analysis on a series of In_xGa_1-xAs: Si. samples with 0 ≤ x ≤ 0.18 revealed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. As the In composition was increased, one or more of these deep levels became resonant with the conduction band and led to a high electron concentration in oxygen doped In_0.53Ga_0.47As. Low temperature photoluminescence emission measurements at 12K on the same set of samples revealed the quenching of the near-band edge peak, and the appearance of new oxygen-induced emission features. DEALO doping in InP has also led to the incorporation of Al and O, and the compensation of Si donors due to oxygen-induced multiple deep levels.     

基于CH365型接口和MCX314As型运动控制器的PCI总线运动控制卡设计

以CH365型PCI总线接口和MCX314As型运动控制器为核心硬件,自主研发了基于运动控制器的PCI总线运动控制卡,该控制卡能够实现4轴位置、速度和S曲线的加减速控制,具有直线、圆弧、位模式插补功能及自动原位搜寻功能,同时具有4路信号输入和8路通用输出.     

Heavy arsenic doping of silicon grown by atmospheric pressure selective epitaxial chemical vapor deposition

Selective epitaxial Si with a high arsenic concentration of 2.2×10¹⁹ atoms/cm³ was deposited at a high growth rate of 3.3 nm/min under atmospheric pressure. It was confirmed that this method had excellent selectivity and produced films having good crystalline quality, abrupt dopant profiles at the interfaces, and smooth surfaces. The growth mechanism is discussed in terms of the relationship between the effects of arsenic surface segregation and etching by hydrogen chloride.     

铜电解精炼过程中砷、锑、铋的危害及脱除方式的进展

在铜电解精炼过程中 ,砷、锑、铋等杂质 ,尤其是锑、铋 ,一直来被人们认为是对阴极铜生产、影响阴极铜质量的最为有害的元素。本文结合贵冶历年的生产实践来讨论砷、锑、铋等杂质在阴极铜生产过程中的危害以及脱除方式的进展。