Characterization of strength properties of thin polycrystalline silicon films for MEMS applications

The aim of this work is to characterize the strength properties of polycrystalline silicon (polysilicon) with the use of tensile and bending test specimens. The strength of thin polysilicon films with different geometry, size and stress concentrations has been measured and correlated with the effective size of the specimen and its stress distribution. The test results are evaluated using a probabilistic strength approach based on the weakest link theory with the use of STAU software. The use of statistic methods of strength prediction of polysilicon test structures with a complex geometry and loading based on test values for standard material tests specimen has been evaluated.     

Low-resistance polysilicon process in contact application for high density devices

For the lowest resistance, it is required to have the epitaxial silicon contact between the silicon plug and the substrate and good step coverage at the high aspect-ratio contact holes, simultaneously. In this work, a double polysilicon (DPS) deposition technique was proposed for the requirements. The first, thin silicon layer is deposited in a single-wafer process chamber with an in-situ H₂-RTP (rapid thermal process) treatment for the epitaxial contact, and the second silicon layer is formed in a batch-type furnace for good step coverage. From chain resistance, Kelvin R_c, and current-voltage (I–V) measurement, the DPS process meets both low resistance and good uniformity, so that it suggests a breakthrough in the small-sized, semiconductor device application.     

硫铁矿烧渣制聚硅硫酸铁工艺条件探讨

以硫铁矿烧渣及水玻璃为原料制备无机高分子絮凝剂聚硅硫酸铁(PSFS),产品成本低,净水效果好,达到了烧渣综合利用的目的.本文研究了不同调节酸及陈化时间对活化硅酸的影响;不同Si/Fe摩尔比对净水效果的影响;同时考察了引入硼离子后对净水效果及产品稳定性的影响.确定以盐酸为调节酸、陈化时间12～14 h、Si/Fe摩尔比0.8为最佳条件.     

Al金属多晶硅纳米膜欧姆接触的制作

利用低压化学气相淀积法（LPCVD）在表面有热氧化二氧化硅的（100）硅衬底上生长80nm厚多晶硅纳米膜,并对其界面进行表征.制作出单层Al金属的欧姆接触样品,在不同退火温度条件下对样片的电阻进行测量.结果表明,退火使欧姆接触的电阻率降低,接触电阻率可达到2.41×10-3Ω.cm2.     

Digital‐to‐analog converter with gamma correction on glass substrate for TFT‐panel applications

Abstract— Low‐temperature polysilicon (LTPS) technology has a tendency towards integrating all circuits on glass substrate. However, the poly‐Si TFTs suffered poor uniformity with large variations in the device characteristics due to a narrow laser process window for producing large‐grained poly‐Si TFTs. The device variation is a serious problem for circuit realization on the LCD panel, so how to design reliable on‐panel circuits is a challenge for system‐on‐panel (SOP) applications. In this work, a 6‐bit R‐string digital‐to‐analog converter (DAC) with gamma correction on glass substrate for TFT‐panel applications is proposed. The proposed circuit, which is composed of a folded R‐string circuit, a segmented digital decoder, and reordering of the decoding circuit, has been designed and fabricated in a 3‐μm LTPS technology. The area of the new proposed DAC circuit is effectively reduced to about one‐sixth compared to that of the conventional circuit for the same LTPS process.     

硅基单结太阳能电池的制备技术、缺陷及其性能的研究

首先综述了硅基单结太阳能电池的分类、制备方法及进展,介绍了化学气相沉积法、液相外延法(LPPE)、金属诱导结晶法(MIC)、磁控溅射法以及分子束外延法等各种硅基太阳能电池的制备方法,阐述了各种制备工艺的优缺点。其次,总结了单晶硅、多晶硅以及非晶硅太阳能电池在组织结构、缺陷方面的研究现状。最后,对硅基太阳能电池的机械、电学、光学以及光电性能等方面的研究进展做了论述。     

Digital time‐modulation pixel memory circuit in LTPS technology

Abstract— A digital time‐modulation pixel memory circuit on glass substrate has been designed and verified for a 3‐μm low‐temperature polysilicon (LTPS) technology. From the experimental results, the proposed circuit can generate 4‐bit digital codes and the corresponding inversion data with a time‐modulation technique. While the liquid‐crystal‐display (LCD) panel operates in the still mode, which means the same image is displayed on the panel, a data driver for an LCD panel is not required to provide the image data of the frame by the proposed pixel memory circuit. This pixel memory circuit can store the frame data and generate its corresponding inversion data to refresh a static image without activating the data driver circuit. Therefore, the power consumption of a data driver can be reduced in the LCD panel.     

耐高温多晶硅应变计

介绍了一种适用于特殊环境进行高温测量的多晶硅应变计的原理、设计、制作工艺及粘贴方法。它的特点是耐高温 (可用在温度达 2 5 0℃的环境中 )、体积小、安装方便。该种应变计已用于检测电站锅炉焊缝的牢固程度 ,在实际应用中性能较好     

Zn还原法制多晶硅副产物ZnCl_2的电解回收

Zn还原法制多晶硅会产生大量的ZnCl2副产物,在不添加其他辅助电解质情况下,成功利用ZnCl2熔盐制备出了Zn,纯度可达70.74%,验收了工艺的可行性。结果表明,在400～550℃范围内,随着电解温度的升高,熔盐电导率逐渐升高,有利于电解反应。但是继续升高温度至700℃时,ZnCl2蒸气压迅速上升到63.204kPa,挥发造成损失十分严重,且易堵塞出气管,反应温度控制在550℃左右较合适。另外,此工艺由于受ZnCl2本身属性的约束,离产业化还有一定距离。     

不同淀积温度多晶硅纳米薄膜的压阻特性

重掺杂多晶硅纳米薄膜具有较大的应变系数和良好的温度特性,是制作力学量传感器的理想压阻材料.为优化多晶硅纳米薄膜的压阻特性,就淀积温度对低压化学气相淀积多晶硅纳米薄膜的压阻特性的影响进行了实验研究.在扫描电镜观测和X射线衍射实验基础上,利用隧道压阻模型分析了薄膜结构和压阻特性的关系.结果表明薄膜结构对应变系数的影响非常显著,但对应变系数的温度特性影响却很小.综合淀积温度对压阻特性和电导特性的影响,多晶硅纳米薄膜的最佳淀积温度在620℃左右.