氮化镓材料中的位错对材料物理性能的影响

氮化镓材料中的位错是制约GaN发光器件及电子器件的性能的一个关键因素。目前对于氮化镓材料中的位错的研究是一大热点。扼要综述了位错对于材料及器件的物理性能的影响：非辐射复合作用、造成器件的漏电流、缩短器件的寿命。并简要介绍了减少GaN外延层中的位错密度的几种方法。     

Models and observations of fcc/bcc interfaces

Whereas models of the structure and periodicity of CSL or near CSL high angle grain boundaries are relatively well developed and have been to some extent verified by experiment, the nature of more general (e.g. fcc/bcc) interfaces is very imperfectly understood. One of the major differences between homo- and heterophase boundaries is the occurrence, in the latter case, of reproducible orientation relationships due to the crystallographic requirements of phase transformation (e.g. a glissile interface for martensitic growth, low energy interfaces for classical nucleation). A review is given of the relationships commonly observed to obtain between fcc and bcc crystals (as well as ordered phases based upon these structures). Within a given relationship, it is possible to use models of the available interfaces to predict their dislocation content; the success of the various approaches is considered. It is shown that the dislocation arrays identified on fcc/bcc boundaries are consistent with the occurrence of a primary structural relaxation, but that the latter does not appear to be complete. Possible reasons for this are discussed, together with the extent to which secondary structural models may be applicable. Attempts to rationalize the observed orientation relationships and morphologies are discussed, and it is pointed out that these all rely on searches for situations of minimum primary misfit, but that the way in which the latter is quantified determines the results of the analyses. Nevertheless, the implication is that the primary misfit does appear to determine the actual behaviour, though no structural or mechanistic conclusions can safely be drawn from this observation.     

A STUDY OF RATE-DEPENDENCE AT ELEVATED TEMPERATURE FOR AN Al-Cu-Mg ALLOY

The hot deformation of an Al-Cu-Mg alloy was studied in the two temperature ranges (room temperature-300℃ and 400℃-480℃). The rate-independent flow curves are typical of elasto-plastic response with significant work hardening followed by strain softening below 300℃. Similar dislocation structures with high density tangled into grain interiors were observed by TEM, which suggests that the process of obstacles arresting mobile dislocations results in this macroscopically rate-independence. At 400-480℃, all rate dependent flow behaviors characterized by a continuous softening after an initial work hardening at a small plastic strain show large tensile elongations. Long dislocation segments around the second phases infer their good mobility to climb across obstacles. Grain boundary morphology observed by TEM suggests that the capacity of the grain boundaries to absorb the dislocations sensitively accounts for the rate-dependent mechanical properties.     

Recent progress in the modeling of high-temperature creep and its application to alloy development

Recent progress in the understanding of high-temperature creep of alloys is discussed in the context of theoretical modeling and its application to alloy development. Emphasis is placed upon those engineering alloys specifically designed for high-temperature applications, such as precipitation and dispersion-strengthened (DS) alloys and metal-matrix composites (MMCs). Currently, these theoretical models use one of two different approaches, (a) a phenomenological approach, which is used in such models as those based on the internal stress concept, and those based on empirical creep equations; and (b) micromechanical models that are based on dislocation mechanisms and the interactions of dislocations with solute atoms, second-phase particles, and other reinforcements such as fibers. All these theoretical models have a common goal, namely, the understanding of high-temperature strengthening mechanisms and the relationship between high-temperature strength and the micromechanical mechanisms during high-temperature plastic deformation of the alloys. These theoretical studies can provide information that is useful in alloy design and processing, such as the selection of alloy chemistry, and the optimization of phase microstructural features (e.g., reinforcement amount, shape, size, and distribution; matrix grain size; and matrix and reinforcement interfaces) by optimization of processing methods. L. Shi, Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA 22901, USA     

A kinetics formulation for low-temperature plasticity

The mechanism of low-temperature plastic deformation is controlled by thermally activated dislocation movements. An evolutionary constitutive law based on the principles of deformation kinetics is described in this article. The constitutive law is expressed with a sinh function designed for computational efficiency. It is derived from rigorously defined kinetics principles. The approximation involved in the sinh function is defined so that in applications an exact evaluation can be made of the validity limits. The system of the constitutive law and the external constraints lead to the operational equations. Applications are developed for constant strain-rate loading, constant stress-rate loading, stress relaxation, creep, and ratchetting processes. The analysis provides a unified treatment for low-temperature plastic deformation.     

A study of the influence of grain boundaries on short crack growth during varying load using a dislocation technique

The propagation of short cracks in the neighbourhood of grain boundaries have been investigated using a technique were the crack is modelled by distributed dislocation dipoles and the plastic deformation is represented by discrete dislocations. Discrete dislocations are emitted from the crack tip as the crack grows. Dislocations can also nucleate at the grain boundaries. The influence on crack growth characteristics of the distance between the initial crack tip and the grain boundary has been studied. It was found that crack growth rate is strongly correlated to the dislocation pile-ups at the grain boundaries.     

Simulation Charpy impact energy of functionally graded steels by modified stress-strain curve through mechanism-based strain gradient plasticity theory

In the present work, Charpy impact energy of functionally graded steels produced by electroslag remelting composed of graded ferritic or austenitic layers in both crack divider and crack arrester configurations has been modeled by finite element method. The yield stress of each layer was related to the density of the statistically stored dislocations of that layer and assuming by Holloman relation for the corresponding stress-strain curves, tensile strengths of the constituent layers were determined via numerical method. By using load-displacement curves acquired from instrumented Charpy impact tests on primary specimens, the obtained stress-strain curves from uniaxial tensile tests were modified. The data used for each layer in finite element modeling were predicted modified stress-strain curves obtained from strain gradient plasticity theory. A relatively good agreement between experimental results and those obtained from simulation was observed.     

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array

The structural property of GaSb epilayers grown on semi-insulator GaAs (001) substrate by metalorganic chemical vapor deposition (MOCVD) using Triethylgallium (TEGa) and trimethylantimony (TMSb),was investigated by variation of the Sb:Ga (V/III) ratio.An optimum V/III ratio of 1.4 was determined in our growth conditions.Using transmission electron microscopy (TEM),we found that there was an interfacial misfit dislocations (IMF) growth mode in our experiment,in which the large misfit strain between epilayer and substrate is relaxed by periodic 90 deg.IMF array at the hetero-epitaxial interface.The rms roughness of a 300 nm-thick GaSb layer is only 2.7 nm in a 10 μm×10 μm scan from atomic force microscopy (AFM) result.The best hole density and mobility of 300 nm GaSb epilayer are 5.27×10 6 cm 3 (1.20×10 6) and 553 cm 2 ·V 1 ·s 1 (2340) at RT (77 K) from Hall measurement,respectively.These results indicate that the IMF growth mode can be used in MOCVD epitaxial technology similar to molecular beam epitaxy (MBE) technology to produce the thinner GaSb layer with low density of dislocations and other defects on GaAs substrate for the application of devices.     

Concurrently coupled atomistic and XFEM models for dislocations and cracks

A method for the modeling of dislocations and cracks by atomistic/continuum models is described. The methodology combines the extended finite element method with the bridging domain method (BDM). The former is used to model crack surfaces and slip planes in the continuum, whereas the BDM is used to link the atomistic models with the continuum. The BDM is an overlapping domain decomposition method in which the atomistic and continuum energies are blended so that their contributions decay to their boundaries on the overlapping subdomain. Compatibility between the continua and atomistic domains is enforced by a continuous Lagrange multiplier field. The methodology allows for simulations with atomistic resolution near crack fronts and dislocation cores while retaining a continuum model in the remaining part of the domain and so a large reduction in the number of atoms is possible. It is applied to the modeling of cracks and dislocations in graphene sheets. Energies and energy distributions compare very well with direct numerical simulations by strictly atomistic models. Copyright © 2008 John Wiley & Sons, Ltd.