内置旁路型软起动器的替代性

本文根据软起动器的发展趋势，就目前市场上应用的三种类型的软起动器进行分析，说明各自的优缺点，同时给出结论，内置旁路型淘汰其它类型的软起动器的必要性。     

晶体管的计算机辅助设计

将晶体管设计中繁琐的纵向、横向参数的设计计算以及参数验算,采用Basic人机对话方式,由计算机完成。并用BAsic语言绘制出所需的七块光刻掩膜图。既大大地减轻了设计人员繁琐劳动、缩短了设计时间、提高设计质量,又便于修改。还可广泛用于同种结构的不同动率要求的各种晶体管的设计中。     

低温硅双极晶体管基区优化设计

常规双极晶体管在７７Ｋ下电流增益和频率性能都严重退化。本文首先分析了低温双极晶体管基区Ｇｕｍｍｅｌ数，基区方块电阻，渡越时间和穿通电压等参数与温度及基区掺杂的关系，然后讨论了低温双极器件基区的优化设计问题。     

气体传感器的集成化研究状况

集成技术在未来传感器的发展中起重要作用。综述了与集成工艺兼容的气体传感器的研究状况,包括半导体场效应型、晶体管型、薄膜型、微量热计型和声表面波(SAW)型气体传感器。     

新型零电压开关多谐振变换器

论述了一种新型多谐振变换器．通过开关型吸收电路使晶体管电压应力大大降低．理论分析和实验结果证明该变换器具有更优越的工作性能．     

Critical transistors nexus based circuit-level aging assessment and prediction

Accurate age modeling, and fast, yet robust reliability sign-off emerged as mandatory constraints in Integrated Circuits (ICs) design for advanced process technology nodes. In this paper we introduce a novel method to assess and predict the circuit reliability at design time as well as at run-time. The main goal of our proposal is to allow for: (i) design time reliability optimization; (ii) fine tuning of the run-time reliability assessment infrastructure, and (iii) run-time aging assessment. To this end, we propose to select a minimum-size kernel of critical transistors and based on them to assess and predict an IC End-Of-Life (EOL) via two methods: (i) as the sum of the critical transistors end-of-life values, weighted by fixed topology-dependent coefficients, and (ii) by a Markovian framework applied to the critical transistors, which takes into account the joint effects of process, environmental, and temporal variations. The former model exploits the aging dependence on the circuit topology to enable fast run-time reliability assessment with minimum aging sensors requirements. By allowing the performance boundary to vary in time such that both remnant and nonremnant variations are encompassed, and imposing a Markovian evolution, the probabilistic model can be better fitted to various real conditions, thus enabling at design-time appropriate guardbands selection and effective aging mitigation/compensation techniques. The proposed framework has been validated for different stress conditions, under process variations and aging effects, for the ISCAS-85 c499 circuit, in PTM 45 nm technology. From the total of 1526 transistors, we obtained a kernel of 15 critical transistors, for which the set of topology dependent weights were derived. Our simulation results for 15 critical transistors kernel indicate a small approximation error (i.e., mean smaller than 15% and standard deviation smaller than 6%) for the considered circuit estimated end-of-life (EOL), when comparing to the end-of-life values obtained from Cadence simulation, which quantitatively confirm the accuracy of the IC lifetime evaluation. Moreover, as the number of critical transistors determines the area overhead, we also investigated the implications of reducing their number on the reliability assessment accuracy. When only 5 transistors are included into the critical set instead of 15, which results in a 66% area overhead reduction, the EOL estimation accuracy diminished with 18%. This indicates that area vs. accuracy trade-offs are possible, while maintaining the aging prediction accuracy within reasonable bounds.     

High temperature field effect hydrogen and hydrocarbon gas sensors based on SiC MOS devices

The growing need for reliable, efficient, high temperature hydrogen and hydrocarbon monitoring has fueled research into novel structures for gas sensing. Metal oxide semiconductor (MOS) devices employing a catalytic metal layer have emerged as one of the leading sensing platforms for such applications, owing to their high sensitivity and inherent capability for signal amplification. The limited operating temperature of such devices employing silicon as the semiconductor has led research efforts to focus on replacing them with devices based on silicon carbide (SiC). More recently, MOS devices having different oxide layers exhibiting improved sensing performance have emerged. Considering the amount of research that has been carried out in this area in recent times, it is important to elucidate the new findings and the gas interaction mechanisms that have been ascribed to such devices, and bring together several theories proposed by different research groups. In this paper we first highlight the needs which have driven research into SiC based field effect hydrogen and hydrocarbon sensors, illustrate the various structures being investigated, and describe the device evolution and current status. We provide several sensing examples of devices that make use of different oxide layers and demonstrate how their electrical properties change in the presence of the gases, as well as presenting the hydrogen gas interaction mechanisms of these sensors.     

大亚湾核电站汽轮机电液控制阀模块烧损原因分析

大亚湾核电站2号机组曾多次发生汽轮机电液控制阀门模块内部直流调压块烧损事件,本文对该模块烧损的原因进行了分析。结果表明,导致汽轮机电液控制阀门直流调压块烧损的主要原因是:内部三极管质量有缺陷、阀门模块的结构过于紧凑,以及其控制机柜通风散热不良导致三极管长期在过热的情况下运行。针对故障原因采取了有效的纠正行动。     

An investigation of the electrical transport properties of graphene-oxide thin films

The electrical transport properties of graphene-oxide (GO) thin films were investigated. The GO was synthesized by a modified Hummers method and was characterized by X-ray diffraction and UV-visible spectroscopy. The thin film of GO was made on a Si/SiO₂ substrate by drop-casting. The surface morphology of the GO film was analyzed by using scanning electron microscopy and atomic force microscopy techniques. Temperature dependent resistance and current-voltage measurements were studied using four-terminal method at various temperatures (120, 150, 175, 200, 250 and 300 K) and their charge transport followed the 3D variable range hopping mechanism which was well supported by Raman spectra analysis. The presence of various functional groups in GO were identified by using high resolution X-ray photo electron (XPS) and Fourier transform infra red (FT-IR) spectroscopic techniques. Graphene-oxide thin film field effect transistor devices show p-type semiconducting behavior with a hole mobility of 0.25 cm² V⁻¹ s⁻¹ and 0.59 cm² V⁻¹ s⁻¹ when measured in air and vacuum respectively.     

Starch as ion-based gate dielectric for oxide thin film transistors

Application of nature bio-materials in electronics represents an emerging field of science and technology that began a few years ago. For the dielectric of transistors, the ion-based electric double layer (EDL) gating has becoming the widely accepted theory of charge modulation with hydrated bio-polymer dielectrics. Herein, we report on the use of starch as the ion-based gate dielectric for oxide thin film transistors. Two types of starches, i.e., water-soluble starch and potato starch were studied either with or without the incorporation of glycerol. Important parameters including mechanical strength, surface morphology, specific capacitance and ion conductivity were analyzed in accordance with the molecular structure of starches. The transistor performance was found in close relation with the specific capacitance and ion conductivity of the starch dielectrics. Higher on/off ratio (2.6 × 10⁶) and field mobility (0.83 cm²V⁻¹s⁻¹) were obtained with glycerol incorporated potato starch due to the advantage in capacitance and ion conductivity. Lower ion conductivity of the water-soluble starch on the other hand caused the large current hysteresis, so the current retention property was examined for the potential application as a memory element. Collectively, this work solidifies our knowledge on the material type, EDL gating mechanism and applicability of nature bio-material gated transistors.