Theoretical Prediction of Chiral 3D Hybrid Organic–Inorganic Perovskites

Hybrid organic–inorganic perovskites (HOIPs), in particular 3D HOIPs, have demonstrated remarkable properties, including ultralong charge‐carrier diffusion lengths, high dielectric constants, low trap densities, tunable absorption and emission wavelengths, strong spin–orbit coupling, and large Rashba splitting. These superior properties have generated intensive research interest in HOIPs for high‐performance optoelectronics and spintronics. Here, 3D hybrid organic–inorganic perovskites that implant chirality through introducing the chiral methylammonium cation are demonstrated. Based on structural optimization, phonon spectra, formation energy, and ab initio molecular dynamics simulations, it is found that the chirality of the chiral cations can be successfully transferred to the framework of 3D HOIPs, and the resulting 3D chiral HOIPs are both kinetically and thermodynamically stable. Combining chirality with the impressive optical, electrical, and spintronic properties of 3D perovskites, 3D chiral perovskites is of great interest in the fields of piezoelectricity, pyroelectricity, ferroelectricity, topological quantum engineering, circularly polarized optoelectronics, and spintronics.     

亚波长光栅用于实现宽光谱消色散1/4波片的研究

基于严格耦合波理论 ,分析了共振区域矩形位相光栅的衍射特性 :位相延迟与光栅周期、占空比、槽深的关系 ,并设计出在 40 0～ 80 0nm范围内的消色散 1/4波片光栅 ,可以实现较为平坦的衍射效率和位相延迟曲线 ,其中位相延迟可保持在 90°左右 ,最大偏差小于 9% ,达到甚至优于普通二元复合消色散波片。通过对加工及安装误差的讨论 ,得到了影响消色散波片光栅性能的主要加工误差是槽深误差和占空比误差。     

Morphology and properties of poly[2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐para‐phenylene vinylene]/silica nanoparticle hybrid films

Poly[2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐para‐phenylene vinylene] (MEH‐PPV)/silica nanoparticle hybrid films were prepared and characterised. Three kinds of materials were compared: parent MEH‐PPV, MEH‐PPV/silica (hybrid A films), and MEH‐PPV/coupling agent MSMA/silica (hybrid B films), in which MSMA is 3‐(trimethoxysilyl) propyl methacrylate. It was found that the hybrid B films could significantly prevent macrophase separation, as evidenced by scanning electron and fluorescence microscopy. Furthermore, the thermal characteristics of the hybrid films were largely improved in comparison with the parent MEH‐PPV. The UV‐visible absorption spectra suggested that the incorporation of MSMA‐modified silica into MEH‐PPV could confine the polymer chain between nanoparticles and thus increase the conjugation length. The photoluminescence (PL) studies also indicated enhancement of the PL intensity and quantum efficiency by incorporating just 2 wt% of MSMA‐modified silica into MEH‐PPV. However, hybrid A films did not show such enhancement of optoelectronic properties as the hybrid B films. The present study suggests the importance of the interface between the luminescent organic polymers and the inorganic silica on morphology and optoelectronic properties. Copyright © 2004 Society of Chemical Industry     

利用固相反应法在硅片上制备硅酸锌发光薄膜及表征

采用与硅集成工艺相兼容的固相反应方法在硅衬底上制备了未经掺杂及掺锰的硅酸锌薄膜 .XRD测试和UV - Vis吸收谱测试证明在高于 880℃的温度下热处理 ,可以获得结晶状态很好的硅酸锌薄膜 .光致发光光谱分析表明 ,未掺杂的薄膜在紫外波段有较弱的发射 ,而掺锰的硅酸锌薄膜在可见光波段有很强的光致发射 .由于硅酸锌薄膜在高温下非常稳定 ,可以与硅集成电路工艺兼容 ,而且发光强度高 ,因此在制作硅基光电集成器件方面有非常大的应用前景     

掺Yb相移光纤光栅形成过程的分析

研究了用二次曝光法制作掺Yb相移光纤光栅的实验过程 ,并对相移光纤光栅制作过程中出现次峰的情况进行了理论分析。合理地解释了该现象     

CdSe量子点的制备与荧光特性研究

主要讨论了CdSe量子点的制备及荧光特性。CdSe量子点由化学方法制备，通过选择不同的反应时间得到不同尺度的量子点样品。用荧光方法研究了量子点样品在石英衬底和有机溶剂中的荧光特性。实验表明，这些量子点都有良好的荧光特性。还用无限深球方势阱模型分析了量子点样品的电子态，并根据荧光参数估算了量子点的尺度．各样品荧光峰具有一致的半峰宽，表明CdSe量子点的成核过程在反应开始时同时完成。     

激光冲击LY2铝合金的薄膜性能

脉冲激光冲击LY2铝合金,在试样表面形成约1.7mm的薄膜,研究了薄膜与基体接合处横截面的微观形貌以及激光冲击搭接率和激光冲击次数对薄膜层残余应力的影响。研究结果表明:激光冲击的光斑搭接率对试样横截面的残余应力影响显著;在薄膜层最大残余应力存在于试样的表层或者近表层,深度方向的残余应力值和残余压应力值变化率均与表层深度成反比;多次冲击能够获得较大的残余应力值,但对于激光冲击LY2铝合金薄膜深度影响较小。     

Diamond semiconductor and elastic strain engineering

Diamond,as an ultra-wide bandgap semiconductor,has become a promising candidate for next-generation microelec-tronics and optoelectronics due to its numerous advantages over conventional semiconductors,including ultrahigh carrier mo-bility and thermal conductivity,low thermal expansion coefficient,and ultra-high breakdown voltage,etc.Despite these ex-traordinary properties,diamond also faces various challenges before being practically used in the semiconductor industry.This review begins with a brief summary of previous efforts to model and construct diamond-based high-voltage switching diodes,high-power/high-frequency field-effect transistors,MEMS/NEMS,and devices operating at high temperatures.Following that,we will discuss recent developments to address scalable diamond device applications,emphasizing the synthesis of large-area,high-quality CVD diamond films and difficulties in diamond doping.Lastly,we show potential solutions to modulate diamond’s electronic properties by the“elastic strain engineering”strategy,which sheds light on the future development of diamond-based electronics,photonics and quantum systems.     

Epitaxial growth of large-area and highly crystalline anisotropic ReSe<Subscript>2</Subscript> atomic layer

The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices.However,because of its low lattice symmetry and interlayer decoupling,anisotropic growth and out-of-plane growth occur easily,yielding thick flakes,dendritic structure,or flower-like structure.In this study,we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy.To achieve controllable growth,a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system.Within the confined reaction space,the nucleation density and growth rate of ReSe2 were significantly reduced,favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness.The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature (＜600 ℃).Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm2/(V.s).Furthermore,the ReSe2 device exhibited an outstanding photoresponse to near-infrared light,with responsivity up to 8.4 and 5.1 A/W for 850-and 940-nm light,respectively.This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.