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排序方式: 共有976条查询结果,搜索用时 30 毫秒
1.
Junyu Chen Yuze Li Yuming Jiang Liucheng Mao Mi Lai Lixia Jiang Huihui Liu Zongxiu Nie 《Advanced functional materials》2021,31(52):2106743
Cancer remains an intractable medical problem. Rapid diagnosis and identification of cancer are critical to differentiate it from nonmalignant diseases. High-throughput biofluid metabolic analysis has potential for cancer diagnosis. Nevertheless, the present metabolite analysis method does not meet the demand for high-throughput screening of diseases. Herein, a high-throughput, cost-effective, and noninvasive urine metabolic profiling method based on TiO2/MXene-assisted laser desorption/ionization mass spectrometry (LDI-MS) is presented for the efficient screening of bladder cancer (BC) and nonmalignant urinary disease. Combined with machine learning, TiO2/MXene-assisted LDI-MS enables high diagnostic accuracy (96.8%) for the classification of patient groups (including 47 BC and 46 ureteral calculus (UC) patients) from healthy controls (113 cases). In addition, BC patients can also be identified from noncancerous UC individuals with an accuracy of 88.3% in the independent test cohort. Furthermore, metabolite variations between BC and UC individuals are investigated based on relative quantification, and related pathways are also discussed. These results suggest that this method, based on urine metabolic patterns, provides a potential tool for rapidly distinguishing urinary diseases and it may pave the way for precision medicine. 相似文献
2.
D. Xu T. Enoki T. Suemitsu Y. Umeda H. Yokoyama Y. Ishii 《Journal of Electronic Materials》1998,27(7):L51-L53
We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures,
which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved
performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different
surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively,
the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry
of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to
conduct “recess engineering” for InAlAs/InGaAs MODFETs. 相似文献
3.
报道了用光致发光光谱,吸收光谱和光电流谱研究具有相同组伊阱宽,不同覆盖层厚度的应变In0.20Ga0.80As/GaAs单量子阱结构的实验结果,结果理论计算,观察到GaAs覆盖层厚度对单量子阱结构的材料质量,应力驰豫和发光淬灭机制的影响,确定了各样品应变值和导带不连续因子Qc,并讨论了这种结构发光机制。 相似文献
4.
利用变温Hall测量研究了重掺杂InGaAs/InAlAs单量子阱中二维电子气,发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。通过分析拍频节点位置,得到电子对称态和反对称态之间的能级间距为4meV。此外,通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系。 相似文献
5.
A. Kussmaul S. Vernon P. C. Colter R. Sudharsanan A. Mastrovito K. J. Linden N. H. Karam N. H. Karam S. C. Warnick M. A. Dahleh 《Journal of Electronic Materials》1997,26(10):1145-1153
We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth
of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatures
of 600 to 700°C. This information permits real-time extraction of composition and layer thickness from the raw ellipsometric
data at sample rates on the order of 0.5 Hz. We describe closed-loop control of composition and total layer thickness on AlGaAs-based
structures, including Bragg reflectors. In-situ data obtained on double-heterostructure quantum-well laser structures demonstrate that spectroscopic ellipsometry is an extremely
powerful monitoring and quality-control tool, giving important real-time information on complex structures that would be difficult
and time-consuming to obtain after growth. 相似文献
6.
文章简要地介绍了InGaAs/InP PIN PD阵列的制作现状及其应用和发展趋势。 相似文献
7.
D. Spemann T. Reinert J. Vogt D. Dobrev T. Butz 《Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms》2002,190(1-4):312-317
For the precise determination of the sizes of submicron beam spots test structures with an excellent edge definition are required. For this purpose a semiconductor heterostructure consisting of an 1.62 μm GaInP epi-layer grown on (0 0 1) GaAs has been made, which provides atomically sharp edges for beam spot size measurements. Since the sample has been thinned down by standard transmission electron microscope (TEM) preparation techniques, it can be used for both PIXE and STIM. The sample has been investigated with a TEM and the ion nanoprobe LIPSION. A one-dimensional beam profile in the low current mode was determined by a STIM measurement using 2 MeV protons and yielded a FWHM of (41±4) nm, which is the smallest value reported so far for high energy nuclear micro- and nanoprobes. Furthermore we present nickel nanowhiskers produced at the GSI Darmstadt by electrochemical preparation of etched ion track membranes that have been used to obtain two-dimensional images of the shapes of submicron beam spots. For these measurements a scan over a single nickel nanowhisker having a diameter of 220 nm and a height of about 6 μm was performed. 相似文献
8.
Nucleation kinetics during the growth of InxGa1−xN on a GaN substrate have been studied. The behavior of nonequilibrium between the InxGa1−xN and the GaN substrate has been analyzed, and hence, the expression derived for the stress-induced supercooling/superheating
has been numerically evaluated. The maximum amount of stress-induced supercooling is found to be 1.017 K at x=0.12. These
values are incorporated in the classical heterogeneous nucleation theory. Using the regular solution model, the interfacial
tension between the nucleus and substrate and, hence, the interfacial tension between nucleus and mother phase and thermodynamical
potential of the compounds have been calculated. The amount of driving force available for the nucleation has been determined
for different compositions and degrees of supercooling. It has been shown that the value of the interaction parameter of InN-GaN
plays a dominant role in nucleation and growth kinetics of InxGa1−xN on a GaN substrate. These values have been used to evaluate the nucleation parameters. It is shown that the nucleation barrier
for the formation of a InxGa1−xN nucleus on a GaN substrate is minimum in the range of x=0.12 to x=0.17, and it has been qualitatively proved that good quality
InxGa1−xN on GaN can be grown only in the range 0<x≤0.2. 相似文献
9.
Yi-Jen Chan Ming-Ta Yang Tzu-Jin Yeh Jen-Inn Chyi 《Journal of Electronic Materials》1994,23(7):675-679
Al0.3Ga0.7As/ln0.15Ga0.85As doped-channel structures were grown by molecular beam epitaxy on 3″ GaAs substrates. The uniformities of electrical and
optical properties across a 3″ wafer were evaluated. A maximum 10% variation of sheet charge density and Hall mobility was
achieved for this doped-channel structure. A1 μm long gate field-effect transistor (FET) built on this layer demonstrated
a peak transconductance of 350 mS/mm with a current density of 470 mA/mm. Compared to the high electron mobility transistors,
this doped-channel FET provides a higher current density and higher breakdown voltage, which is very suitable for high-power
microwave device applications. 相似文献
10.
G. Coudenys I. Moeeman G. Vermeire F. Vermaerke Y. Zhu P. Van Daele P. Demeester E. Maayan B. Elsner J. Salzman E. Finkman 《Journal of Electronic Materials》1994,23(2):225-232
The shadow masked growth technique is presented as a tool to achieve thickness and bandgap variations laterally over the substrate
during metalorganic vapor phase epitaxy. Lateral thickness and bandgap variations are very important for the fabrication of
photonic integrated circuits, where several passive and active optical components need to be integrated on the same substrate.
Several aspects of the shadow masked growth are characterized for InP based materials as well as for GaAs based materials.
Thickness reductions are studied as a function of the mask dimensions, the reactor pressure, the orientation of the masked
channels and the undercutting of the mask. The thickness reduction is strongly influenced by the mask dimensions and the reactor
pressure, while the influence of the orientation of the channels and the amount of undercutting is only significant for narrow
mask windows. During shadow masked growth, there are not only thickness variations but also compositional variations. Therefore,
we studied the changes in In/Ga and As/P ratios for InGaAs and InGaAsP layers. It appears that mainly the In/Ga-ratio is responsible
for compositional changes and that the As/P-ratio remains unchanged during shadow masked growth. 相似文献