Three-dimensional and anisotropic numerical analysis of a PEM fuel cell

In this study, the effects of cell temperature and relative humidity on charge transport parameters are numerically analyzed. In order to perform this analysis, three-dimensional and anisotropic numerical models are developed. The numerical models are integrated into the experimental values for anisotropic electrical conductivities, as depending on cell temperature and relative humidity, that were obtained from our previous study. The achieved results indicate that the values of current densities in the in-plane direction increase with increasing cell temperature and relative humidity, while the current densities reach a maximum in the rib regions for both the numerical model at the through-plane direction. The behaviors of electrolyte potentials are similar with changes in the cell temperature and relative humidity. In addition, the cathode electrical potentials in both the in-plane direction and through-plane direction do not change to a considerable amount with increasing cell temperature and relative humidity.     

多晶硅表面金属催化化学腐蚀法制绒研究现状

在多晶硅太阳能电池的生产过程中, 金刚线切割技术(Diamond wire sawn, DWS)具有切割速度快、精度高、原材料损耗少等优点, 受到了广泛关注。金刚线切割多晶硅表面形成的损伤层较浅, 与传统的酸腐蚀制绒技术无法匹配, 金属催化化学腐蚀法应运而生。金属催化化学腐蚀法制绒具有操作简单、结构可控且易形成高深宽比的绒面等优点, 具有广阔的应用前景。本文总结了不同类型的金属催化剂在制绒过程中的腐蚀机理及其形成的绒面结构, 深入分析和讨论了具有代表性的银、铜的单一及复合催化腐蚀过程及绒面结构和电池片性能。最后对金刚线切割多晶硅片表面的金属催化化学腐蚀法存在的问题进行了分析, 并展望了未来的研究方向。     

The surface carboxyl group of carbonaceous microspheres effects on the synthesis and structure of SiOC ceramics

In this study, C/SiOC and C/SiO₂ composites were prepared by using carbonaceous microspheres with different surface functional groups. Carbonaceous microspheres based on hydrothermal reaction of glucose contains hydroxyl group, while the surface carboxyl group increases after NaOH etching. The hydroxyl group increases the oxygen-enriched structural units of SiOC ceramics, and the C spheres are closely enwrapped in SiOC matrix after pyrolysis at 900 °C. However, the interfacial reaction of surface carboxyl with Si–OH results in the formation of cristobalite SiO₂, and C spheres are not only encased inside the SiOC matrix, but also dispersed outside of SiOC ceramics. After removal of C via calcination at 500 °C for 5 h, C/SiOC and C/SiO₂ composites are transformed into amorphous SiO₂ and cristobalite SiO₂, respectively. The thermogravimetric analysis indicates the oxidation resistance of SiOC is superior to that of C and SiO₂.     

Etching characteristics of thin SiON films using a liquefied perfluorocarbon precursor of C6F12O with a low global warming potential

Perfluorocarbon gas is widely used in the semiconductor industry. However, perfluorocarbon has a negative effect on the global environment owing to its high global warming potential (GWP) value. An alternative solution is essential. Therefore, we evaluated the possibility of replacing conventional perfluorocarbon etching gases such as CHF₃ with C₆F₁₂O, which has a low GWP and is in a liquid state at room temperature. In this study, silicon oxynitride (SiON) films were plasma-etched using inductively coupled CF₄ +C₆F₁₂O+O₂ mixed plasmas. Subsequently, the etching characteristics of the film, such as etching rate, etching profile, selectivity over Si, and photoresist, were investigated. A double Langmuir probe was used and optical emission spectroscopy was performed for plasma diagnostics. In addition, a contact angle goniometer and x-ray photoelectron spectroscope were used to confirm the change in the surface properties of the etched SiON film surface. Consequently, the etching characteristics of the C₆F₁₂O mixed plasma exhibited a lower etching rate, higher SiON/Si selectivity, lower plasma damage, and more vertical etched profiles than the conventional CHF₃ mixed plasma. In addition, the C₆F₁₂O gas can be recovered in the liquid state, thereby decreasing global warming. These results confirmed that the C₆F₁₂O precursor can sufficiently replace the conventional etching gas.     

Study of metal assisted anisotropic chemical etching of silicon for high aspect ratio in crystalline silicon solar cells

Textured surface is commonly used to enhance the efficiency of silicon solar cells by reducing the overall reflectance and improving the light scattering. In this study, a comparison between isotropic and anisotropic etching methods was investigated. The deep funnel shaped structures with high aspect ratio are proposed for better light trapping with low reflectance in crystalline silicon solar cells. The anisotropic metal assisted chemical etching (MACE) was used to form the funnel shaped structures with various aspect ratios. The funnel shaped structures showed an average reflectance of 14.75% while it was 15.77% for the pillar shaped structures. The average reflectance was further reduced to 9.49% using deep funnel shaped structures with an aspect ratio of 1:1.18. The deep funnel shaped structures with high aspect ratios can be employed for high performance of crystalline silicon solar cells.     

Temperature cycling and its effect on mechanical behaviours of highporosity chalks

Temperature history can have a significant effect on the strength of water-saturated chalk.In this study,hydrostatic stress cycles are applied to understand the mechanical response of chalk samples exposed to temperature cycling between each stress cycle,compared to the samples tested at a constant temperature.The total accumulated strain during a stress cycle and the irreversible strain are reported.Chalk samples from Kansas(USA)and Mons(Belgium),with different degrees of induration(i.e.amount of contact cementation),were used.The samples were saturated with equilibrated water(polar)and nonpolar Isopar H oil to quantify water weakening.All samples tested during 10 stress cycles with varying temperature(i.e.temperature cycled in between each stress cycle)accumulated more strain than those tested at constant temperatures.All the stress cycles were performed at 30℃.The two chalk types behaved similarly when saturated with Isopar H oil,but differently when saturated with water.When saturated with water,the stronger Kansas chalk accumulated more total strain and more irreversible strain within each stress cycle than the weaker Mons chalk.     

等离子体刻蚀工艺控制模型分析

讨论了主因素分析法以及神经网络法在等离子体刻蚀工艺中的应用.结果表明主元素分析法可以实现对数据的压缩,而神经网络算法则显示出比传统的统计过程控制算法更好的准确性.     

Patterning issues for the fabrication of sub-micron memory capacitors' electrodes

This paper describes some of the key issues associated with the patterning of metal electrodes of sub-micron (especially at the critical dimension (CD) of 0.15 μm) dynamic random access memory devices. Due to reactive ion etching lag, the Pt etch rate decreased drastically below the CD of 0.20 μm and thus K-th storage node electrode with the CD of 0.15 μm could not be fabricated using the Pt electrodes. Accordingly, we have proposed novel techniques to surmountly-the above difficulties. The Ru electrode cannot for the stack-type structure is introduced and alternative multischemes based on the introduction of the concave-type selfstructure upto using semi-Pt or Ru as an electrode material are outlined respectively.     

真空微电子荧光平板显示器件的实验研究

真空微电子荧光平板显示器件的实验研究刘杰明，李志能，陈秀峰（浙江大学信息与电子工程学系）关键词：真空微电子，反应离子刻蚀一、引言近十年来，随着真空微电子学的崛起，利用微细加工技术，使真空元器件集成化和高性能化已成为可能，一种新型场致发射阵列真空荧光平...     

GaN/GaAs(001)与GaN/Al2O3(0001)外延层光辅助湿法腐蚀行为的比较

研究了用金属有机物气相外延(MOVPE)方法在GaAs(001)衬底上生长的立方相GaN(c-GaN)外延层的光辅助湿法腐蚀特性,并和生长在蓝宝石(0001)衬底上的六方相GaN(h-GaN) 外延层的光辅助湿法腐蚀特性进行了比较.实验发现c-GaN膜的暗态电流和光电流的变化不同于h-GaN膜的腐蚀电流的变化规律.对引起上述差异的原因进行了简单的讨论.