Enhanced thermal stability of Bi2Te3-based alloys via interface engineering with atomic layer deposition

The ease of Te sublimation from Bi₂Te₃-based alloys significantly deteriorates thermoelectric and mechanical properties via the formation of voids. We propose a novel strategy based on atomic layer deposition (ALD) to improve the thermal stability of Bi₂Te₃-based alloys via the encapsulation of grains with a ZnO layer. Only a few cycles of ZnO ALD over the Bi₂Te_2.7Se_0.3 powders resulted in significant suppression of the generation of pores in Bi₂Te_2.7Se_0.3 extrudates and increased the density even after post-annealing at 500 °C. This is attributed to the suppression of Te sublimation from the extrudates. The ALD coating also enhanced grain refinement in Bi₂Te_2.7Se_0.3 extrudates. Consequently, their mechanical properties were significantly improved by the encapsulation approach. Furthermore, the ALD approach yields a substantial improvement in the figure-of-merit after the post-annealing. Therefore, we believe the proposed approach using ALD will be useful for enhancing the mechanical properties of Bi₂Te₃-based alloys without sacrificing thermoelectric performance.     

Prompting structure stability of O3–NaNi0.5Mn0.5O2 via effective surface regulation based on atomic layer deposition

Layered O3 type oxides exhibit promising prospects as high-performance cathodes for sodium-ion batteries (SIBs) due to their low cost and high theoretical capacities. Nevertheless, the intrinsic surface composition and bulk structure degradation upon cycling presents a huge obstacle to stable sodium-ion storage/transportation. Besides, the effective surface decoration on layered O3 oxides is still challenging through conventional wet chemical route owing to their extraordinarily high surface sensitivities. Herein, a typical O3 type layered oxide of NaNi_0.5Mn_0.5O₂ (NNMO) was selected and successfully encapsulated by precisely controlled Al₂O₃ layers via atomic layer deposition (ALD) technology. With the optimally controlled Al₂O₃ thickness of 3 nm, the surface regulated NNMO delivers a highly reversible capacity of 73.6 mA h g^-1, with a significantly improved capacity retention of 68.0% after 300 cycles at 0.5 C, and a superior rate capability of 65.8 mA h g^-1 at 10 C. Further air sensitivity tests demonstrate that the protective layer could effectively mitigate the generation of sodium-based impurities on NNMO, and reduce the surface sensitivities. Both chemical and electrochemical aging tests confirm the contribution of Al₂O₃ coating layer in alleviating ion dissolution as well as stabilizing the structure and morphology of NNMO. Based on regulating the surface of O3 type layered oxides utilizing ALD technique, this work supplies an effective and facile strategy to overcome the challenges from fast structure degradation and electrochemical property decay, which not only highlights the significance and effectiveness of surface engineering in secondary batteries, but also sheds light on accurate interface construction and regulation for active electrode materials, particularly for those sensitive to ambient atmosphere.     

Charge injection in metal/organic/metal structures with ZnO:Al/organic interface modified by Zn1−xMgxO:Al layer

Aluminum-doped zinc oxide (ZnO:Al, AZO) electrodes were covered with very thin (∼6 nm) Zn_1−xMg_xO:Al (AMZO) layers grown by atomic layer deposition. They were tested as hole blocking/electron injecting contacts to organic semiconductors. Depending on the ALD growth conditions, the magnesium content at the film surface varied from x = 0 to x = 0.6. Magnesium was present only at the ZnO:Al surface and subsurface regions and did not diffuse into deeper parts of the layer. The work function of the AZO/AMZO (x = 0.3) film was 3.4 eV (based on the ultraviolet photoelectron spectroscopy). To investigate carrier injection properties of such contacts, single layer organic structures with either pentacene or 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine layers were prepared. Deposition of the AMZO layers with x = 0.3 resulted in a decrease of the reverse currents by 1–2 orders of magnitude and an improvement of the diode rectification. The AMZO layer improved hole blocking/electron injecting properties of the AZO electrodes. The analysis of the current-voltage characteristics by a differential approach revealed a richer injection and recombination mechanisms in the structures containing the additional AMZO layer. Among those mechanisms, monomolecular, bimolecular and superhigh injection were identified.     

Enhanced thermoelectric properties of atomic-layer-deposited Hf:Zn16O/18O superlattice films by interface-engineering

This study examines three novel approaches for enhancing the thermoelectric (TE) properties of atomic-layer-deposited (ALD) ZnO thin films: 1) Hf-doping, which preserved the crystallinity of ZnO and provided effective phonon scattering owing to Hf's similar atomic radius to and large mass difference with Zn, leading to high power factor (PF) and low thermal conductivity (κ); 2) controlling the distribution of Hf into an alternating scattered phase/clustered phase superlattice, which balanced the high PF of the scattered phases with the low κ of the clustered phases, while providing significant energy-filtering effect to raise the Seebeck coefficient; 3) introducing ¹⁸O/¹⁶O periodicity into the Hf:ZnO films—by alternately using H₂¹⁶O and H₂¹⁸O as oxidants in the ALD processes, which further suppressed κ without compromising PF. The combination of the three approaches resulted in a maximum improvement in ZT of ~1600% over that of the undoped ZnO.     

彩色AC-PDP运动图像仿真系统的开发

开发了彩色AC-PDP运动图像仿真系统,通过利用本系统的运动图像仿真功能可以对现有的各种显示技术、与子场有关的各种因素进行仿真及比较,为人们开发提高彩色AC-PDP图像显示质量的新型技术及子场提供了理论上的依据;通过利用本系统的Gamma特性研究功能可以对彩色AC-PDP中视频信号的反Gamma特性进行研究,并对反Gamma相关编码进行子场逼近,为选择符合要求的子场编码提供了判据.     

大坝安全监控专家系统中的知识处理

在介绍产生式规则及其数学模型的基础上，论述了用成熟的关系数据库 技术来表示和存储产生式规则表示的专家知识的方法，较好地解决了知识的存储和管理问题 。同时，利用关系数据库中实体间的关系，很容易将分散存储的规则元素组合成规则供推理 时使用。在分析了大坝安全监控专家系统知识特点的基础上举例说明了用关系数据库表 示产生式规则的具体方法。     

长江螺山站高水位流量关系和城陵矶（莲花塘）控制水位的研究

螺山站高水位流量关系是确定长江城陵矶（莲花糖）控制水位的基本依据，从基本的河道水力学规律出发，考虑涨落率修正、瞬时比降修正，计算各时段点的代表性比降，和相应糙率，求出均值，根据断面资料，得出高水位的稳定流曲线，并以各日流量转化的稳定流点，进行验证，精度很好，分析了河段区间流量对螺山站稳定流量的影响。阐明了螺山站稳定流量的变化情况和趋势，推求了各次大洪水的超额洪量，计算出莲花糖以上的总入流，根据现今的湖区及槽蓄容积进行洪水演进，计算1954年特大洪水的超额洪量，并分析节三峡水库拦洪后对长江中下游超额水量的影响；对莲花塘不同防洪控制水位进行了技术经济分析和评价，提出了抬高控制水位的具体建议。     

条件概率关系数据库模型

现实世界中大量存在着的不确定性信息，关系数据库模型仅视它们为空值，有必要增强其处理这类信息的能力，文章在总结前人工作的基础上推广关系数据库模型，创建有效处理随机型不确定性信息的条件概念关系数据库模型，该模型通过在关系模式中增加一个条件概率测度属性，为每条记录指定适当的条件概率的途径，来表示不确定性信息。文中以对象码为基本工具，创建了条件概率关系结构；以特征函数为基本工具，定义了一套基于该结构的代数运算规则。条件概率的语意比概率的语意广泛，灵活，因而该模型能有效克服概率关系模型的许多不足。