GeTe中铁电极化对自旋霍尔电导的调控研究

利用电场控制电荷的自旋流与电流相互转换是自旋电子器件的关键所在,而这种控制机制在铁电半导体GeTe中可以得到实现,因为其铁电极化可以改变自身的自旋织构。基于密度泛函理论计算,我们发现可以通过铁电极化可以进一步调节自旋霍尔电导(spinHallconductivity,简记为SHC),通过计算得到自旋霍尔电导的一个分量σxyz在带边缘附近可以达到100?/e(?cm)-1的量级,其主要原因在于电极化改变了能带结构。该研究工作为可控的自旋输运的实验和理论研究具有重要的价值,必将推动自旋电子学的进一步发展。     

Hierarchical Coherent Phonons in a Superatomic Semiconductor

The coupling of phonons to electrons and other phonons plays a defining role in material properties, such as charge and energy transport, light emission, and superconductivity. In atomic solids, phonons are delocalized over the 3D lattice, in contrast to molecular solids where localized vibrations dominate. Here, a hierarchical semiconductor that expands the phonon space by combining localized 0D modes with delocalized 2D and 3D modes is described. This material consists of superatomic building blocks (Re₆Se₈) covalently linked into 2D sheets that are stacked into a layered van der Waals lattice. Using transient reflectance spectroscopy, three types of coherent phonons are identified: localized 0D breathing modes of isolated superatom, 2D synchronized twisting of superatoms in layers, and 3D acoustic interlayer deformation. These phonons are coupled to the electronic degrees of freedom to varying extents. The presence of local phonon modes in an extended crystal opens the door to controlling material properties from hierarchical phonon engineering.     

Synergistic Improvement of Long-Term Plasticity in Photonic Synapses Using Ferroelectric Polarization in Hafnia-Based Oxide-Semiconductor Transistors

A number of synapse devices have been intensively studied for the neuromorphic system which is the next-generation energy-efficient computing method. Among these various types of synapse devices, photonic synapse devices recently attracted significant attention. In particular, the photonic synapse devices using persistent photoconductivity (PPC) phenomena in oxide semiconductors are receiving much attention due to the similarity between relaxation characteristics of PPC phenomena and Ca²⁺ dynamics of biological synapses. However, these devices have limitations in its controllability of the relaxation characteristics of PPC behaviors. To utilize the oxide semiconductor as photonic synapse devices, relaxation behavior needs to be accurately controlled. In this study, a photonic synapse device with controlled relaxation characteristics by using an oxide semiconductor and a ferroelectric layer is demonstrated. This device exploits the PPC characteristics to demonstrate synaptic functions including short-term plasticity, paired-pulse facilitation (PPF), and long-term plasticity (LTP). The relaxation properties are controlled by the polarization of the ferroelectric layer, and this polarization is used to control the amount by which the conductance levels increase during PPF operation and to enhance LTP characteristics. This study provides an important step toward the development of photonic synapses with tunable synaptic functions.     

Layered Antiferromagnetism Induces Large Negative Magnetoresistance in the van der Waals Semiconductor CrSBr

The recent discovery of magnetism within the family of exfoliatable van der Waals (vdW) compounds has attracted considerable interest in these materials for both fundamental research and technological applications. However, current vdW magnets are limited by their extreme sensitivity to air, low ordering temperatures, and poor charge transport properties. Here the magnetic and electronic properties of CrSBr are reported, an air-stable vdW antiferromagnetic semiconductor that readily cleaves perpendicular to the stacking axis. Below its Néel temperature, T_N = 132 ± 1 K, CrSBr adopts an A-type antiferromagnetic structure with each individual layer ferromagnetically ordered internally and the layers coupled antiferromagnetically along the stacking direction. Scanning tunneling spectroscopy and photoluminescence (PL) reveal that the electronic gap is Δ_E = 1.5 ± 0.2 eV with a corresponding PL peak centered at 1.25 ± 0.07 eV. Using magnetotransport measurements, strong coupling between magnetic order and transport properties in CrSBr is demonstrated, leading to a large negative magnetoresistance response that is unique among vdW materials. These findings establish CrSBr as a promising material platform for increasing the applicability of vdW magnets to the field of spin-based electronics.     

Preparation of In-doped Y2O3 ceramics through a sol-gel process: Effects on the structural and electronic properties

The Pechini-type sol-gel (PSG) process has been used for the preparation of doped oxides due to its capability to overcome most of the difficulties that frequently occur by using other producing methods. In this work we analyze the case of samples of pure and In-doped yttria (Y₂O₃) prepared by the PSG process. We experimentally characterize the synthesized samples by x-ray diffraction, micro-Raman spectroscopy, electrochemical impedance spectroscopy (EIS), and time-differential perturbed γ-γ angular correlation (PAC) spectroscopy, and we compare these results with those obtained starting from commercial oxide powders. We found that the PSG process can be used to successfully produce doped yttria in the cubic phase, with the impurities substitutionally located at the cationic sites of the structure. By the proposed PSG route, the inclusion of impurities does not affect the particle size nor the resistivity. However, when we compare the PSG samples with other samples produced from commercial powder, we found that the first have lower resistivities at grain interiors. On the other hand, PAC spectroscopy in ¹¹¹In(→¹¹¹Cd)-doped yttria allows the study of the dynamic hyperfine interactions observed by the radioactive ¹¹¹Cd impurity-probe, which can be used to “sense” the host electron availability near the impurities after the electron-capture decay of ¹¹¹In. Differences between PAC spectra for PSG samples and the commercial powder suggest that the PSG process introduces additional donor defects into the yttria electronic structure, which is consistent with the lower resistivity observed in the PSG samples by EIS spectroscopy.     

Charge transport and recombination in heterostructure organic light emitting transistors

Light-emitting field effect transistors (LEFETs) are a class of organic optoelectronic device capable of simultaneously delivering the electrical switching characteristics of a transistor and the light emission of a diode. We report on the temperature dependence of the charge transport and emissive properties in a model organic heterostructure LEFET system from 300 K to 135 K. We study parameters such as carrier mobility, brightness, and external quantum efficiency (EQE), and observe clear thermally activated behaviour for transport and injection. Overall, the EQE increases with decreasing temperature and conversely the brightness decreases. These contrary effects can be explained by a higher recombination efficiency occurring at lower temperatures, and this insight delivers new knowledge concerning the optimisation of both the transport and emissive properties in LEFETs.     

Synthesis and characterization of nanostructured magnetoresistive Ni doped ZnO films

We report a method to produce magnetic nanostructured semiconductor films based in ZnO doped with Nickel to control their magnetic properties. The method is based on a combined diffusion–oxidation process within a controlled atmosphere chamber to produce a uniform distribution of Ni ions in the ZnO films (ZnO:Ni). The synthesis of ZnO:Ni films is reported as well as the magnetoresistive characteristics, the used method yields films with reproducible and homogeneous properties. The films were also characterized structurally by X-Ray Diffraction (XRD) and Raman spectroscopy, and by Hall–van der Pauw measurements. The XRD measurements confirm the nanocrystalline films character. The films resulted of n-type conductivity with electron concentrations of ~10²⁰ cm⁻³ in average and carrier mobilities of 5 cm²/V s. The Magnetoresistance (MR) behavior of the films at 300 K shows negative changes of ΔR~0.5% in accordance with the usual literature reports on samples produced by other methods.     

Phonon phase stability,structural, mechanical,electronic, and thermoelectric properties of two new semiconducting quaternary Heusler alloys CoCuZrZ (Z = Ge and Sn)

For meeting the energy demand, the development of new and novel thermoelectric (TE) materials for power generation is very vital. In this draft, we have theoretically investigated two new quaternary CoCuZrZ (Z = Ge and Sn) Heusler alloys for their structural, mechanical, electronic, and TE properties. In the energy minimization process, the alloys are found to be non-magnetic in the ground state. Based on calculated phonon dispersion curves, formation energy, and elastic constants, we propose that both CoCuZrGe and CoCuZrSn are stable. Furthermore, the mechanical properties indicate that CoCuZrGe (CoCuZrSn) has a brittle (ductile) nature. The electronic properties examined in Perdew-Burke-Ernzerhof (PBE), PBEsol, and modified Becke-Johnson (mBJ) potential, all predict that reported systems are narrow-gap semiconductors (SCs). In addition, the temperature dependent TE properties have been studied by calculating the electronic thermal conductivity (κ), Seebeck coefficient (S), power factor (PF) and electrical conductivity (σ/τ). The obtained positive value of S conveys the materials as p-type SCs, with a maximum value of 26.2 μV/K for CoCuZrGe and 28 μV/K for CoCuZrSn. The σ/τ, κ, and PF show increasing trends with rising temperature. The PF is found to be 1.55 × 10¹² WK⁻²m⁻¹s⁻¹ for CoCuZrGe and 1.38 × 10¹² WK⁻²m⁻¹s⁻¹ for CoCuZrSn. The proposed semiconducting Heusler alloys may receive attention for a range of TE and spintronic applications.     

Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications

III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp²-bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed.     

Solar light-driven reduction of crystal violet by a composite of g-C3N4, β-Ag2Se, γ-Fe2O3 and graphite

Abstract

In this work, a new g-C₃N₄-based Z-scheme with γ-Fe₂O₃ and β-Ag₂Se both n-type semiconductors, and graphite to favor electron exchange is presented. The composite material was studied by XRD, FTIR, UV-Vis, TEM, XPS, TGA, DSC and TOF-SIMS, and the ability of this photocatalytic system to act as a photo-reductant was assessed using crystal violet (CV⁺) dye. Solar light driven photo-reduction of CV⁺ in the presence of tri-sodium citrate evidenced a synergistic enhancement of the activity of the composite toward reduction, with ～20 times higher conversion rates per unit of surface area than those of g-C₃N₄. Photo-oxidation experiments under Xe lamp irradiation in the presence of H₂O₂ also showed that the AgFeCN composite featured a higher activity (～8×) than g-C₃N₄. This Z-scheme may deserve further study as a photo-reductant to obtain hydrogen or hydrogenated compounds. Moreover, the use of CV⁺ may represent a facile procedure that can aid in the selection of new photocatalysts to be used in hydrogen production.