固体铝电解电容器用导电高分子制备工艺进展

依据近年的相关专利,综述了用于固体铝电解电容器的导电高分子的最新制备工艺,介绍了导电高分子固体铝电解电容器的结构,详细描述了制备导电高分子的两种主要方法——化学聚合和电化学聚合——及其进展历程。介绍了新颖掺杂剂的发现与使用,对各种工艺的特点进行了评述。     

BPxN1-x薄膜的制备及磷元素对其光学能隙的影响

本文从应用出发，选择光学石英为衬底，采用热丝辅助射频化学气相沉积的方法沉积BPxN1—x薄膜，对样品进行了X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外—可见等测试。XRD、SEM结果显示薄膜多晶态，表面形貌随时间变化，最终为胞状；紫外—可见光光谱结果显示BPxN1—x薄膜的紫外吸收边随沉积时间的加长、PH3流量的增加而向长波长方向移动。因此，该材料的光学能隙可以通过生长工艺适当调整。另外，BPxN1—x薄膜与液晶层能较好匹配等特性更使其适用于紫外空间光调制器。     

镨掺杂分布对1.3μm光纤放大器特性影响

对掺氟化镨玻璃光纤放大器的小信号增益，用广义的高斯近似公式可获得精确的分析表达。文中研究了限制光纤芯层中央部分的镨掺杂对光纤放大器特性的影响，结果发现限制镨掺杂分布能改进光纤放大器的工作效率，且截止波长比芯层全部均匀掺镨的光纤更长。     

表面引发剂对熔融铝合金直接氧化生长的影响

为了控制熔融铝合金直接氧化法制备Al2O3/Al复合材料的氧化生长,采用ZnO,SiO2和MgO3种表面引发剂,研究它们对Al-Si-Zn合金氧化生长过程及Al2O3/Al复合材料组织形貌的影响.结果表明:与未使用引发剂时相比,使用SiO2,ZnO或MgO表面引发剂制备的粉末都能显著地缩短Al-Si-Zn合金的氧化生长孕育期,提高合金氧化生长速率,改善复合材料的胞状生长方式,提高复合材料的组织均匀度和致密度,为实际生产应用提供了依据.实验发现:ZnO表面引发剂的使用效果最为突出,其最佳添加量为12mg/cm2.     

Effect of doping polyacrylic acid with some dopants as studied by different techniques

The molecular weight of polyacrylic acid (PAA) was determined by a viscometric method using NaNO₃ as solvent at 30°C. The specific electric conductivities (σ) of PAA as well as PAA doped with carbon black (CB), chromium oxide (Cr₂O₃), and cupferron with different concentrations (from 0.25 to 1 wt %) were measured at a temperature range 360–400 K. IR spectra of some polymers were determined and it was shown that when PAA was doped with 0.5 wt % CB, a C? O? C band appeared at 775–875 cm^?1. The positron annihilation lifetime (PAL) spectra in PAA doped with the above‐mentioned dopants were measured as a function of their concentrations. It was observed that the short lifetime intensity I₁ decreased, whereas the intermediate lifetime intensity I₂, which is related to the conductivity of the material, increased with increasing the wt % of Cr₂O₃ and cupferron as well as at low concentrations of CB. These results are discussed in terms of the conducting island model. It was found that there were distinct positive relationships between σ and I₂. © 2002 John Wiley & Sons, Inc. J Appl Polym Sci 84: 877–883, 2002; DOI 10.1002/app.10381     

DX centers in AlxGa1-xAs bulk alloy,AlAs/GaAs ordered,and disordered superlattices

Properties of theDX centers in Al_0.5Ga_0.5As bulk alloy (b-AL), (AlAs)₂ (GaSa)₂ ordered superlattice (o-SL) and (AlAs) _m (GaAs) _n disordered superlattice (d-SL) (m = 1, 2, 3,n = 1, 2, 3) with the same macroscopic composition were measured and compared. By deconvolution of deep level transient spectroscopy (DLTS) spectrum due to theDX center, we have found a decrease in the number of separate peaks in DLTS spectrum in an intentionally atomic ordered arrangement. Visiting Scholar of the Japan Society for the Promotion of Science. On leave from Department of Electrical Engineering, San Jose State University, San Jose, California 95192-0084, USA.     

超高温还原气氛下几种掺杂物对氧化铝晶体形貌的影响

用自行设计并安装的氢气气氛保护钼丝炉在超高温的条件下（〉１８５０℃）烧结ＨＮ－Ａｌ２Ｏ３的各种掺合试样，用光学显微镜，电子扫描显微镜，能谱及Ｘ射线衍射分析，比较详细地观察了各种掺杂物和温度对氧化铝晶形貌的影响，确定了板状氧化铝晶粒的尺寸，结果表明：在此烧结条件下，各试样中都含有板状氧化铝晶粒，各晶粒的发育情况与原料的纯度，掺杂物的种类和数量及烧结温度有关。     

Pressureless low temperature sintering of nanocrystalline zirconia ceramics via dry powder processing

Pressureless sintering approaches provide a simple avenue to manufacture dense ceramic parts with minimal processing equipment, but current pressureless sintering techniques have yet to demonstrate capabilities of producing dense ceramics while maintaining sub-50 nm grain sizes. Nanocrystalline yttria stablized zirconia ceramics were process from 4 mol% yttria stablized zirconia (4YSZ) nanopowders with a crystallite size of 7.5 nm using dry cold isostatic pressing (CIP) where powders are dried immediately prior to green compact formation and CIP vacuum bagging. It is shown that CIP pressures >75 000 psi (517 MPa) effectively remove pores larger than 100 nm and that pressureless sintering occurs at reduced temperatures for green densities ≥50%. Though the sintering kinetics are shown to be similar to other zirconia nanopowder sintering studies, the small initial crystallize size and reduced sintering temperature allowed densities as high as 97.2%, while retaining a ceramic grain size at or below 40 nm. Produced nanocrystalline 4YSZ ceramics with a grain size of 30.3 nm and a density of 96.3% had Vicker's hardnesses as high as 14.2 GPa and Vicker's indentation fracture resistance of 3.43 MPa·, demonstrating that simple processing approaches can be refined to fabricate nanocrystalline ceramics while maintaining high hardness and indentation fracture resistance.     

AlF3添加剂和焙烧温度对铝电解炭阳极过电位的影响

在实验室制备各类AlF3掺杂试验阳极，在测试其基本物理化学性能的基础上，采用“改进断电流法”进行阳极过电位测试，研究AlF3添加剂和阳极焙烧温度对阳极过电位的影响。结果表明：在一定条件下，阳极中添加AlF3既可降低阳极的空气／CO2反应活性，也可降低阳极过电位；受高温脱S等因素的影响，阳极的电化学活性及其空气／CO2反应活性并未随着焙烧温度的提高相应降低。