多层圆片级堆叠THz硅微波导结构的制作

基于微电子机械系统(MEMS)工艺,提出一种多层圆片堆叠的THz硅微波导结构及其制作方法。为了验证该结构在制作THz无源器件中的优势,基于6层圆片堆叠的硅微波导结构,设计了一种中心频率365 GHz、带宽80 GHz的功率分配/合成结构,并对其进行了仿真。研究了制作该结构的工艺流程,攻克了工艺过程中的关键技术,包括硅深槽刻蚀技术和多层热压键合技术,并给出了工艺结果。最终实现了多层圆片堆叠功率分配/合成结构的工艺制作和测试。测试结果表明,尽管样品的插入损耗较仿真值增加3 dB左右,考虑到加工误差和夹具损耗等情况,样品主要技术指标与设计值较为一致。     

一种基于MEMS工艺的365 GHz硅微波导垂直转接结构

基于微电子机械系统(MEMS)工艺设计并制作了一种THz垂直转接结构,该结构采用6层硅片堆叠的硅微波导形式。理论分析计算了垂直转接结构的参数,并使用三维电磁场分析软件HFSS对该结构进行了模拟仿真。设计得到了中心频率为365 GHz、带宽为80 GHz、芯片尺寸为10 mm×7 mm×2.7 mm的THz垂直转接结构。给出了一套基于MEMS工艺的硅微波导的制作流程,制作了365 GHz垂直转接结构并对其进行测试。获得的THz垂直转接结构的回波损耗随频率变化的测试结果与仿真结果基本一致。采用MEMS工艺制作的硅微波导垂直转接结构具有精度高、一致性好、成本低的特点,满足THz器件的发展需求。     

The instability of terahertz plasma waves in cylindrical FET

In this paper, the Dyakonov–Shur instability of terahertz (THz) plasma waves has been analyzed in gated cylindrical field effect transistor (FET). In the cylindrical FET, the hydrodynamic equations in cylindrical coordinates are used to describe the THz plasma wave in two- dimensional electronic gas. The research results show that the oscillation frequency of the THz plasma wave is increased by increasing the component of wave in the circumferential direction, but instability increment of the THz plasma wave are increased by increasing the radius of channel.     

A 340-GHz thin film polarisation converter

This paper introduces a 340-GHz polarisation converter. The polarisation converter consists of a bilayer metamaterial, which is processed by the flexible thin film lithography method. Two-dimensional metamaterial offer such advantages over traditional quarter-wave-plates as compactness, low profile and simple fabrication process, but the insertion loss is comparably high. In order to lower the insertion loss, the 10-μm ultrathin polyimide substrate and a bilayer structure separated by a quarter wavelength air impedance match layer are adopted. After the horn antenna’s far-field test by vector network analyser and the Gaussian beam test based on Terahertz time-domain spectroscopy (THz-TDS), the results show that in the band of 325–350 GHz, the transmission loss is less than 2 dB, and the axial ratio is less than 3 dB; besides, simulation and test insertion loss performance difference is less than 1 dB, which indicates that the method we adopt is effective. In addition, based on transmission line theory, we analyse its working principle and the influence from the fabrication error.     

Synthesis and characterization of Cu-doped polymeric carbon nitride

Polymeric carbon nitride doped with copper through a solid-state reaction was characterized by several techniques, among them are UV-visible spectroscopy, infrared spectroscopy, X-ray photoelectron spectroscopy, etc. The material is a semiconductor with a wide band gap of 2.74 eV. Sites of both Cu(I) and Cu(II) were detected, apparently only coordinated by the polymer. The material comprises crumpled nanosheets, and is substantially an amorphous layered material with a prevalent 2D structure with low inter-planar interactions, as shown by X-ray diffractometry and TeraHertz spectroscopy. Photo-oxidation of benzyl alcohol was used to probe the active sites of the material, comparing them with the non-doped material. The higher activity and selectivity toward salicylic alcohol of the non-doped material can be due to both a more localized electron transfer and a longer lifetime of the hole–electron pair. Cu-CN favored the oxidation of hydroxymethyl group. Therefore, the presence of copper can favor different reaction pathways with respect to the non-doped material.     

Terahertz characterisation of UV offset lithographically printed electronic-ink

Inkjet-printed electronics are showing promising potential in practical applications, but methods for real-time, non-contact monitoring of printing quality are lacking. This work explores Terahertz (THz) sensing as an approach for such monitoring. It is demonstrated that alterations in the localised dielectric characteristics of inkjet-printed electronics can be qualitatively distinguished using quasi-optically-based, sub-THz reflection spectroscopy. Decreased reflection coefficients caused by the sintering process are observed and quantified. Using THz near-field scanning imaging, it is shown that sintering produces a more uniform spatial distribution of permittivity in the printed carbon patterns. Images generated using THz-TDS based imaging are presented, demonstrating the combination of high resolution imaging with quantification of complex permittivities. This work, for the first time, demonstrates the feasibility of quality control in printed electronic-ink with THz sensing, and is of practical significance to the development of in-situ and non-contact commercial-quality characterisation methods for inkjet-printed electronics.     

2.52THz面阵透射成像系统改进及分辨率分析

太赫兹(THz)面阵成像具有成像速度快和像素多等特点,因此具有广阔的应用前景。成像系统的光路设计对成像质量具有很大影响。利用PyrocamⅢ热像仪作为面阵探测器,利用相干公司SIFIR-50连续太赫兹激光器作为成像光源,搭建太赫兹面阵实时成像系统,并通过多个离轴抛面镜和聚乙烯透镜对原有成像系统进行改进,以人民币水印、镂空金属板和分辨率板为目标进行实时面阵成像,获得了较为清晰的图像,通过与原有成像结果对比,验证了成像质量的提高,并通过分析成像结果对该成像系统的分辨率进行估计,该成像系统分辨率可以达到0.6 mm。     

氧化钒薄膜太赫兹波段频率特性研究

利用直流对靶磁控溅射镀膜法,在Si衬底上制备出在太赫兹（THz）波段具有开关性能的氧化钒（VOx）薄膜。用X射线光电子能谱（XPS）、扫描电子显微镜（SEM）方法对VOx薄膜的组份和形貌进行表征。利用THz时域频谱系统（THz-TDS）对VOx薄膜的光致相变性能进行测试。实验表明,VOx薄膜在波长532 nm连续激光照...     

太赫兹波段电磁超介质的应用及研究进展

太赫兹波和电磁超介质是电磁学领域关注的热点.太赫兹波与电磁超介质相互作用可以实现对太赫兹波的操纵和调控,有望填补"太赫兹空白".介绍了太赫兹波段电磁超介质的研究进展,包括电磁超介质电磁性能可调谐的实施途径,电磁超介质在太赫兹功能器件方面的应用(调制器/开关、传感器/探测器、滤波器、偏振元件和吸波器),太赫兹波段表面等离...     

掺硫硒化镓晶体在太赫兹波段的光学特性

利用太赫兹时域光谱技术测量了掺硫硒化镓(GaSe1-xSx)晶体在太赫兹波段的光学参数,包括折射系数、吸收系数等.使用自由空间电光取样法获得了太赫兹电磁波的脉冲波形.对不同硫掺杂量的硒化镓晶体进行了研究,在硫的掺杂量为0,0.01,0.14,0.26,0.37时,在0.2-2.0THz测得了GaSe1.S.的折射系数、...