Ion migration behavior and its interaction with sintering environment in cation conductor during flash sintering

Flash sintering has been reported in various ceramics. Nevertheless, anion and cation conductors exhibit different flash-sintering behaviors, and the interaction mechanism between the conductive species and the sintering environment has remained unclear. Herein, we report the flash-sintering phenomena of a typical cation conductor, Na₃Zr₂(SiO₄)₂(PO₄) with anode region surrounded by air and NaNO₃ environments. The results prove that the ionic behavior and joule heating distribution can be controlled by changing the electrode environment. Four possible scenarios describing the ion migration behavior and interaction with the environment are proposed for providing a guidance for controlling the ion interaction behavior during flash sintering.     

A thermal perspective of flash sintering: The effect of AC current ramp rate on microstructure evolution

In flash sintering experiments, the thermal history of the sample is key to understanding the mechanisms underlying densification rate and final properties. By combining robust temperature measurements with current-ramp-rate control, this study examined the effects of the thermal profile on the flash sintering of yttria-stabilized zirconia, with experiments ranging from a few seconds to several hours. The final density was maximized at slower heating rates, although processes slower than a certain threshold led to grain growth. The amount of grain growth observed was comparable to a similar conventional thermal process. The bulk electrical conductivity correlated with the maximum temperature and cooling rate. The only property that exhibited behavior that could not be attributed to solely the thermal profile was the grain boundary conductivity, which was consistently higher than conventional in flash sintered samples. These results suggest that, during flash sintering, athermal electric field effects are relegated to the grain boundary.     

Linear friction welding of Ti6Al4V: experiments and modelling

Linear friction welding of the Ti6Al4V alloy is studied. A new definition of the energy input rate is proposed, based on an integration over time of the in-plane force and velocity; a strong correlation with the upset rate is then found. The effective friction coefficient is estimated to be 0·5±0·1 for varying frequencies and amplitudes, with only a weak dependence on the processing conditions displayed. A model is proposed that accounts for both the conditioning and equilibrium stages of the process, which is shown to be in good agreement with the experimental data. The model is used to study the mechanism by which the flash is formed. A criterion is proposed by which the rippled nature of its morphology can be predicted.     

聚丙烯装置聚合区设备布置及管廊的配管设计

结合工程特点及工艺流程,阐述了300 kt/a聚丙烯装置的布置原则,管道、管架设计要点和方法,以及需要注意的问题。     

气液固三相相平衡热力学模型与计算方法

原油中含有大量的高分子有机固相物质，因此，要准确地描述油气体系相平衡，必须对气液固三相相平衡进行研究，在对高分子有机烃类沥青沉降机理有了一定的认识的基础上，提出了大的交互作用系数，可以描述沥青与原油中轻质不相容性的程度。根据对油气烃类混合物体系的一般性认识与提出的沥青组分特征化方法，导出了与之相应的有其自身特殊性的气液沥青三相相平衡物料平衡方程组，用考虑沥青沉降三相闪蒸数值算法，对沥青沉降进行有效的理化模拟计算，此外，结合实例分析，给出了沥青质参考逸度的计算，饱和压力和沉降量的拟合方法。     

热力学相图计算技术在闪速燃烧合成氮化硅铁中的应用

将热力学相图计算技术应用于Si-Fe-O-N体系,以评估由FeSi75粉闪速燃烧合成氮化硅铁的条件和目标产物。结果表明:将闪速燃烧温度控制在1200～1500℃之间较为适宜,此时平衡态产物中除主要含有Si3N4以外,还有一定量的Fe与Si间化合物和少量稳定的SiO2存在。此计算结果与实际试验结果吻合良好。     

进口VPSA制氧装置的流程特点及配置

详细介绍了进口的VPSA制氧装置的流程特点、工艺参数及主要设备的配置。实际运转证明 ,该制氧装置具有运行可靠、启动时间短、部分负荷性能优越、负荷转换速度快等优点 ,能满足金隆铜业有限公司的实际生产要求。     

用Flash制作会说话的照片

利用Flash5制作会说话的照片，使照片变成一张张有趣的动画卡片。     

高清晰度电视样机控制子系统的实现

本文提出了基于微处理器AT89C55的国家高清晰度电视样机控制子系统的总体设计方案和软硬件实现方法。目前，该控制系统己顺利完成，并参与北京、上海两地的功能样机测试。     

Formation of C49-TiSi2 in flash memories: a nucleation controlled phenomenon?

The formation of Ti silicides has been examined in flash memories with 0.25 μm linewidth by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. It has been observed that, after the first rapid thermal process and the selective metal etch, there is no silicide on the source and on a majority of drain contacts while C49-TiSi₂ is found on the gate. A pre-amorphisation implant increases drastically the formation of C49-TiSi₂ in the drain zone while modifications of annealing conditions have little impact. These results indicate that the formation of C49-TiSi₂ is most likely controlled by nucleation and that this nucleation is sensitive to both the width and the length of the reaction zone. The formation of a Ti rich silicide may play an important role in this nucleation by decreasing the driving force for the formation of C49-TiSi₂. Curiously enough, the formation of C49-TiSi₂ appears thus as a major concern for the salicide process in flash memories.