Compiler compatible 5.66 Mb/mm2 8T 1R1W register file in 14 nm FinFET technology

1-read/1-write (1R1W) register file (RF) is a popular memory configuration in modern feature rich SoCs requiring significant amount of embedded memory. A memory compiler is constructed using the 8T RF bitcell spanning a range of instances from 32 b to 72 Kb. An 8T low-leakage bitcell of 0.106 μm² is used in a 14 nm FinFET technology with a 70 nm contacted gate pitch for high-density (HD) two-port (TP) RF memory compiler which achieves 5.66 Mb/mm² array density for a 72 Kb array which is the highest reported density in 14 nm FinFET technology. The density improvement is achieved by using techniques such as leaf-cell optimization (eliminating transistors), better architectural planning, top level connectivity through leaf-cell abutment and minimizing the number of unique leaf-cells. These techniques are fully compatible with memory compiler usage over the required span. Leakage power is minimized by using power-switches without degrading the density mentioned above. Self-induced supply voltage collapse technique is applied for write and a four stack static keeper is used for read Vmin improvement. Fabricated test chips using 14 nm process have demonstrated 2.33 GHz performance at 1.1 V/25 °C operation. Overall V_min of 550 mV is achieved with this design at 25 °C. The inbuilt power-switch improves leakage power by 12x in simulation. Approximately 8% die area of a leading 14 nm SoC in commercialization is occupied by these compiled RF instances.     

浅谈在多节目码流复用与解复用中PID码的作用

文章简要阐述了PID码在多节目码流的复用与解复用中所起的作用。并运用PID码的原理来解释和解决在实际工作中碰到的PID码问题。     

多孔硅发光二极管的载流子传输特性研究

制备AI／多孔硅／c-Si／Al结构的多孔硅发光二极管，利用其I-V特性关系，以及在不同温度下其I-V特性的变化，结合多孔硅的特殊微结构及性质，分析了多孔硅发光二极管中载流子的产生和传输过程；通过比较其发光猝灭前后I-V特性的变化，解释了发光猝灭的原因。提出了如果在低电场下能够实现大量载流子在限制性Si微粒中复合．是提高多孔硅电致发光效率的一个途径。     

HIPS-g-MA共聚物对HIPS/PC共混物相容性、形态和拉伸性能的影响

研究了HIPS／PC共混物的相容性及HIPS－MA对HIPS（30）／PC（70）共混物的相容性、形态和拉伸性能的影响。DSC研究结果表明，HIPS／PC共混物中PS的玻璃化转变温度（Tg)不随组成而变化，而PC的Tg随其质量分数的降低逐渐向低温移动，说明HIPS／PC是部分相容体系。通过DSC、扫描电镜形态观察和拉伸性能测试结果发现，当HIPS－g-MA的含量低于7．5％时，共混物的相容性改善不明显，当其含量达到7．5％时，对共混物有明显的乳化作用，说明饱和的界面浓度在7．5％左右。HIPS－g-MA接枝共聚物在HIPS（30）／PC（70）共混物中的增容作用可能是酯交换反应原位生成的嵌段共聚物所致。     

邻重氮萘醌改性酚醛树脂碱溶解特性的定量评价

本文提出了一种利用紫外—可见光分光光度仪定量评价高分子膜溶解速度的方法。并着重考查了邻重氮萘醌改性后的酚醛树脂在碱溶液中的溶解特性。实验表明,曝光后的树脂在碱溶液中首先溶胀,然后才开始溶解,即存在溶解滞后现象。溶解滞后和溶解速度与溶液的碱度有关,与树脂膜厚无关。     

Study on axiomatic rules for building up relationships between requirement and source programs

The purpose of our study is to build up relationships between requirement and source programs with our originally thought-out rules. When other rules to be derived from these original rules are applied to software development, even a single instruction in a programming language could be determined, and the program would satisfy the requirement. More specifically speaking, these rules will turn into a formula or a prototype of software programs. Hence, when the variables in the requirement are placed in the formula, we can get a required program in an automatic way.     

多孔硅发光机制的分析

从量子力学的基本理论出发讨论了量子限制效应，推导出多孔硅有效禁带宽度增量并用量子限制效应和表面态及其物质在发光中作用的理论解释了ＰＳ光致发光的实验现象。     

2—叠氮—1萘醌—5—磺酸生产工艺优化

研究以L-酸为原料,对合成用于制作PS版的2-叠氮1-萘醌-5-磺酸的亚硝化、还原及重氮化三步生产工艺进行最佳配比选优试验。结果表明对L-酸的总收率可达73-75％.获得了较高的收率。     

μC／OS—Ⅲ在Cortex—M3处理器上的移植

为了将μC／OS-Ⅲ移植到Cortex—M3处理器上,选用RealView MDK作为软件开发平台,针对Cortex—M3处理器特性编写了移植所需的C语言和汇编语言源代码,并验证了移植的正确性。移植后的μC／OS-Ⅲ能够稳定运行于Cortex～M3处理器上。该移植对大部分Cortex—M3处理器具有通用性,对其他架构处理器的μC／OS-Ⅲ移植具有参考作用。