| 外延碳化硅纳米线的合成和显微结构研究 |
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| 引用本文： | 沈振菊,张晓娜,韩晓东,张泽.外延碳化硅纳米线的合成和显微结构研究[J].电子显微学报,2011,30(4):435-438. |
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| 作者姓名： | 沈振菊 张晓娜 韩晓东 张泽 |
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| 作者单位： | 1. 北京工业大学固体微结构与性能研究所,北京,100124
2. 北京工业大学固体微结构与性能研究所,北京100124;浙江大学电镜中心,浙江杭州310027 |
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| 基金项目： | 北京工业大学校“Si纳米线生长方向控制及相关生长机理研究”基金资助项目 |
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| 摘 要： | 本文以硅为衬底,用热蒸发SiO粉末的方法合成了外延碳化硅(SiC)纳米线.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)等对SiC纳米线进行了电子显微学分析.实验发现,在SiC纳米线生长前,衬底上首先自发形成了一层SiC多晶膜,纳米线在这层多晶膜的某些晶粒上外延生长.在显微结构分析的基础上,本文探讨了外延生长一...
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| 关 键 词： | 热蒸发 外延生长 SiC 纳米线 |
Synthesis and Microstructure of Epitaxial SiC Nanowires |
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| SHEN Zhen-ju,ZHANG Xiao-na,HAN Xiao-dong,ZHANG Ze.Synthesis and Microstructure of Epitaxial SiC Nanowires[J].Journal of Chinese Electron Microscopy Society,2011,30(4):435-438. |
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| Authors: | SHEN Zhen-ju ZHANG Xiao-na HAN Xiao-dong ZHANG Ze |
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| Affiliation: | 1.Institute of Microstructure and Properties of Advanced Materials,Beijing University of Technology,Beijing 100124; 2.Electric Microscopy Center,Zhejiang University,Hangzhou Zhejiang 310027,China) |
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| Abstract: | We obtained epitaxial SiC nanowires on silicon substrate by evaporating SiO powder.SEM and TEM were used to characterize the morphology and the microstructure.It was found that a polycrystalline SiC layer was formed on the Si substrate before the growth of the SiC nanowires.For single SiC nanowire,it would epitaxially grow on a grain of the polycrystalline SiC layer.Based on the microstructure analysis,it was thought that high deposition temperature and low deposition rate benefit the epitaixial growth. |
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| Keywords: | thermal evaporation epitaxial growth SiC nanowires |
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