功率MOSFET寿命模型综述

MOSFET是实现电力电子装置功能的核心器件,但其寿命短是制约电力电子系统可靠性的关键因素。由老化造成的MOSFET失效分为封装失效和参数漂移失效,前者由MOSFET制造工艺及材料导致的缺陷在工作环境中恶化而产生,后者为器件在使用过程中其内部微观退化机制在宏观参数的体现。对目前已有的MOSFET寿命相关的研究成果进行总结,分析了MOSFET的各类失效模式,并建立了各类失效模式下MOSFET寿命模型;并进一步总结了各类失效模式下寿命模型的失效判据及其各类寿命预测模型实验验证方法。

Review of MOSFET Lifetime Model

MOSFET is the cardinal device to achieve the basic function of power electronic converters, but its short lifetime is a major restriction to the reliability of power electronics system. Aging failures of MOSFET can be classified by package failure and parameter drift failure, the former is generated by the deterioration of defects resulted from the manufacturing and material under certain working conditions; the latter is its parameter drift derived from internal microscopic degradation in the usage. This paper summarizes the relevant research results of MOSFET lifetime model, it classifies MOSFET failure modes, and establishes the corresponding MOSFET lifetime model of different failure modes; it further summarizes the failure criteria and experimental verification methods of each lifetime model.